2SD2618 Transistors Power Transistor (80V, 4A) 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector : Emitter !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits Unit VCBO VCEO 80 80 7 4 V V V A (DC) 6 A (t = 100ms) VEBO IC ICP Collector current Collector power dissipation PC Junction temperature Storage temperature Tj Tstg 2 W 30 150 −55~+150 W (Tc = 25°C) °C °C !Packaging specifications and hFE Type 2SD2618 Package hFE TO-220FN 1k~10k 500 Code Basic ordering unit (pieces) !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current BVCBO BVCEO - 100 V V ICBO 80 80 - IEBO - - VCE(sat) hFE fT 1000 - 40 10 1.5 Cob - 35 Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance *1 Measured using pulse current. *2 Transition frequency of the device. 10000 - µA µA V MHz pF Conditions IC = 50µA IC = −1mA VCB = 80V VEB = 5V IC/IB = 2A/4mA VCE/IC = 3V/2A VCE = 5V , IE = −0.2A , f = 10MHz VCB = 10V , IE = 0A , f = 1MHz *1 *1 *2