NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications. Features: D High Collector Current: IC = 5A Max D Low Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27V Collector–Emitter Voltage, VCEO NTE11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V NTE12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current NTE11 NTE12 Symbol Test Conditions Min Typ Max Unit ICBO VCB = 10V, IE = 0 – – 0.1 µA VCB = 10V, IE = 0 – – 100 nA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Emitter Cutoff Current NTE11 Collector–Emitter Voltage NTE11 Typ Max Unit VEB = 7V, IC = 0 – – 0.1 µA VEB = 5V, IC = 0 – – 1.0 µA IC = 1mA, IB = 0 20 – – V IC = 1mA, IB = 0 18 – – V IE = 10µA, IC = 0 7 – – V VCE = 2V, IC = 500mA, Note 1 340 – 600 VCE = 2V, IC = 2A, Note 1 180 – 625 VCE = 2V, IC = 2A, Note 1 150 – – IC = 3A, IB = 100mA, Note 1 – – 1 V IC = 3A, IB = 100mA, Note 1 – 0.4 1.0 V VCB = 6V, IE = 50mA, f = 200MHz – 150 – MHz VCB = 6V, IE = 50mA, f = 200MHz – 120 – MHz VCB = 20V, IE = 0, f = 1MHz – – 50 pF VCB = 20V, IE = 0, f = 1MHz – 60 – pF VCEO NTE12 Emitter–Base Voltage VEBO DC Current Gain NTE11 hFE1 NTE12 NTE11 Only hFE2 Collector–Emitter Saturation Voltage NTE11 VCE(sat) NTE12 fT NTE12 Collector Output Capacitance NTE11 Min IEBO NTE12 Transition Frequency NTE11 Test Conditions Cob NTE12 Note 1. Pulse measurement .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max