NTE2023 Integrated Circuit General Purpose, High Current 7–Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected in a common–collector configuration. Absolute Maximum Ratings: Power Dissipation (Any One Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C Individual Transistor Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage so as to maintain isolation between transistors, and to provide normal transistor action. Undesired coupling between transistors is avoided by maintaining the substrate (5) at either DC or signal (AC) ground. An appropriate bypass capacitor can be used to establish a signal ground. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CES IC = 500µA 20 80 – V Collector–Substrate Breakdown Voltage V(BR)CIE ICI = 500µA 20 80 – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA 16 40 – V Emitter–Base Breakdown Voltage V(BR)EBO IC = 500µA 5 7 – V VCE = 0.5V, IC = 30mA 30 80 – VCE = 0.8V, IC = 50mA 40 85 – Forward Current Transfer Ratio hFE Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Base–Emitter Saturation Voltage VBE(sat) IC = 30mA – 0.75 1 V Collector–Emitter Saturation Voltage VCE(sat) IC = 30mA – 0.13 0.5 V IC = 50mA – 0.2 0.7 V ICEO VCE = 10V – – 10 µA ICBO VCB = 10V – – 1 µA Collector Cutoff Current Pin Connection Diagram Q1 Emitter 1 16 VDD Q2 Emitter 2 15 Common Cathode Q2 Base 3 14 Q3 Emitter Q5 Emitter 4 13 Q3 Base Substrate 5 12 Q4 Emitter Q5 Base 6 11 Q4 Base Q6 Emitter 7 10 Q7 Base Q6 Base 8 9 16 9 1 8 Q7 Emitter .260 (6.6) Max .870 (22.0) Max .200 (5.08) Max .100 (2.54) .700 (17.78) .099 (2.5) Min