NTE NTE929

NTE929
Integrated Circuit
General Purpose, High Current, NPN Transistor Array
Description:
The NTE929 is a versatile array of five high–current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e.
1mA) for applications in which offset parameters are of special importance.
Independent connections for each transistors plus a separate terminal for the substrate permit maximum flexibility in circuit design.
Features:
D High IC 100mA max
D Low VCEsat (at 50mA) 0.7V max.
D Matched pair (Q1 and Q2)
V10 (VBE matched): ±5mV max.
I10 (at 1mA): 2.5µA max.
D 5 independent transistors plus separate substrate connection.
Applications:
D Signal processing and switching systems operating from DC to VHF
D Lamp and relay driver
D Differential amplifier
D Temperature–compensated amplifier
D Thyristor firing
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation, PD
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Linearly 6.67mW/°C
Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +125°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL . . . . . . . . . . . +265°C
The following ratings apply for each transistor in the device:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Note 1. The collector of each transistor of the NTE929 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)
should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can
be used to establish a signal ground.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
For Each Transistor
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
20
60
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
15
24
–
V
Collector–Substrate Breakdown Voltage
V(BR)CIO
20
60
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 500µA, IC = 0
5.0
6.9
–
V
ICI = 100µA, IB = 0, IE = 0
ICEO
VCE = 10V, IB = 0
–
–
10
µA
ICBO
VCE = 10V, IE = 0
–
–
1
µA
hFE
VCE = 3V, IC = 10mA
40
76
–
VCE = 3V, IC = 50mA
40
75
–
VBE
VCE = 3V, IC = 10mA
0.65
0.74
0.85
V
VCE(sat)
IC = 50mA, IB = 5mA
–
0.4
0.7
V
fT
VCE = 3V, IC = 10mA
–
450
–
MHz
Absolute Input Offset Voltage
VIO
VCE = 3V, IC = 1mA
–
1.2
5.0
mV
Absolute Input Offset Current
IIO
VCE = 3V, IC = 1mA
–
0.7
2.5
µA
Collector Cutoff Current
DC Forward Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Gain–Bandwidth Product
Pin Connection Diagram
Collector Q1 1
16 Base Q1
Collector Q2 2
Base Q2 3
15 Emitter Q1
14 Collector Q5
Emitter Q2 4
13 Base Q5
Substrate 5
12 Emitter Q5
Base Q3 6
11 Emitter Q4
Collector Q3 7
10 Base Q4
Emitter Q3 8
16
9 Collector Q4
9
.260 (6.6) Max
1
8
.300
(7.62)
.785 (19.9)
Max
.200 (5.08)
Max
.245
(6.22)
Min
.100 (2.54)
.700 (17.7)