NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector–Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W Note 1. Pulse Test: Pulse Width ≤ 5ms, Duty Cycle ≥ 10%. Electrical Charactertistics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 160 – – V VCE = 160V, VEB(off) = 1.5V – – 0.1 mA VCE = 160V, VEB9off) = 1.5V, TC = +150°C – – 5.0 mA ICEO VCE = 80V, IB = 0 – – 750 µA Emitter–Base Cutoff Current IEBO VBE = 7V, IC = 0 – – 1.0 mA Collector–Base Cutoff Current ICBO VCB = 160V, IE = 0 – – 750 µA OFF Characteristics Collector–Emitter Sustaining Voltage Collector–Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 2 ICEX Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≥ 2%. Electrical Charactertistics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 2V, IC = 8A 15 35 – VCE = 4V, IC = 16A 8 15 – IC = 8A, IB = 0.8A – – 2.0 V IC = 16A, IB = 2A – – 3.5 V ON Characteristics (Note 2) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) IC = 16A, IB = 2A – – 3.9 V Base–Emitter ON Voltage VBE(on) VCE = 4V, IC = 16A – – 3.9 V 1.0 – – MHz – – 800 pF Dynamic Characteristics Current–Gain Bandwidth Product fT Output Capacitance VCE = 20V, IC = 1A, f = 0.5MHz, Note 3 Cob VCB = 10V, IE = 0, f = 0.1MHz Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≥ 2%. Note 3. fT = |hFE| S ftest. .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C .550 (13.97) .430 (10.92) E .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners