NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 120 – – V VCE = 120V, VBE(off) = 1.5V – – 10 mA VCE = 120V, VBE(off) = 1.5V, TC = +150°C – – 1.0 mA ICEO VCE = 60V, IB = 0 – – 50 µA ICBO VCB = 180V, IE = 0 – – 10 µA IEBO VBE = 6V, IC = 0 – – 100 µA OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 50mA, IB = 0, Note 1 ICEX Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 2V, IC = 0.5A 50 – – VCE = 2V, IC = 10A 30 – 120 VCE = 2V, IC = 25A 12 – – IC = 10A, IB = 1.0A – – 1.0 V IC = 25A, IB = 2.5A – – 1.8 V IC = 10A, IB = 1.0A – – 1.8 V IC = 25A, IB = 2.5A – – 2.5 V VCE = 2V, IC = 10A – – 1.8 V VCE = 10V, IC = 1A, f = 10MHz, Note 2 40 – – MHz VCB = 10V, IE = 0, f = 0.1MHz – – 300 pF ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) Base–Emitter ON Voltage VBE(on) Dymanic Characteristics Current Gain–Bandwidth Product fT Output Capacitance Cob Switching Characteristics Rise Time tr VCC = 80V, IC = 10A, IB1 = 1A, VBE(off) = 6v – – 0.3 µs Storage Time ts VCC = 80V, IC = 10A, IB1 = IB2 = 1A – – 1.0 µs Fall Time tf – – 0.25 µs Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. fT = |hfe| S ftest. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case