NTE NTE38

NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–
speed switching and linear amplifier applications for high–voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D Collector–Emitter Sustaining Voltage:
NTE38: VCEO(sus) = 350V @ IC = 200mA
NTE175: VCEO(sus) = 300V @ IC = 200mA
D Second Breakdown Collector Current:
NTE38 IS/b = 875mA @ VCE = 40V
NTE175 IS/b = 350mA @ VCE = 100V
D Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCB
NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Vdc
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5°C/W
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
350
–
–
V
300
–
–
V
400
–
–
V
375
–
–
V
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 200mA, IB = 0
NTE38
NTE175
Collector–Emitter Sustaining Voltage
VCEX(sus) IC = 200mA, VBE = –1.5V, L = 10mH
NTE38 Only
VCER(sus) IC = 200mA, IB = 0, RBE = 50Ω
Emitter–Base Breakdown Voltage
NTE38 Only
VEBO
IE = 0.5mA, IC = 0
6
–
–
V
Collector Cutoff Current
ICEO
VCE = 150V, IB = 0
–
–
5
mA
Collector Cutoff Current
NTE38
ICEV
VCE = 250V, VBE(off) = 1.5V
–
–
0.5
mA
VCE = 250V, VBE(off) = 1.5V, TC = +100°C
–
–
5.0
mA
VCE = 315V, VBE(off) = 1.5V
–
–
0.5
mA
VCE = 315V, VBE(off) = 1.5V, TC = +100°C
–
–
5.0
mA
VCE = 360V, VBE(off) = 1.5V
–
–
0.5
mA
VCE = 360V, VBE(off) = 1.5V, TC = +100°C
–
–
5.0
mA
VCE = 450V, VBE(off) = 1.5V
–
–
1.0
mA
VCE = 300V, VBE(off) = 1.5V, TC = +150°C
–
–
3.0
mA
IEBO
VEB = 6V, IC = 0
–
–
0.5
mA
hFE
IC = 1A, VCE = 4V
10
–
100
IC = 0.1A, VCE = 10V
40
–
–
IC = 1A, VCE = 2V
8
–
80
IC = 1A, VCE = 10V
25
–
100
IC = 1A, IB = 125mA
–
–
2.0
V
–
–
0.75
V
IC = 1A, IB = 125mA
–
–
1.4
IC = 1A, IB = 100mA
–
–
1.4
V
IC = 1A, VCE = 10V
–
–
1.4
V
IC = 200mA, VCE = 10V, ftest = 5MHz,
Note 3
20
–
–
MHz
15
–
–
MHz
VCB = 10V, IE = 0, f = 1MHz
–
–
120
pF
NTE175
Emitter Cutoff Current
ICEX
ON Characteristics (Note 2)
DC Current Gain
NTE38
NTE175
Collector–Emitter Saturation Voltage
NTE38
VCE(sat)
NTE175
Base–Emitter Saturation Voltage
NTE38
V
VBE(sat)
NTE175
Base–Emitter ON Voltage
NTE175 Only
VBE(on)
Dynamic Characteristics
Current Gain –Bandwidth Product
NTE38
fT
NTE175
Output Capacitance (NTE175 Only)
Cob
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| ftest
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
t = 1s (Non–Repetitive), VCE = 40V
875
–
–
mA
VCE = 100V
350
–
–
mA
–
–
0.6
µs
–
–
2.5
µs
–
–
0.6
µs
IB1 = 100mA, RL = 200Ω
–
–
3.0
µs
IB1 = IB2 = 100mA
–
–
4.0
µs
–
–
3.0
µs
Second Breakdown
Second Breakdown Collector Current
NTE38
IS/b
NTE175
Switching Characteristics
NTE38
Rise Time
tr
Storage Time
ts
Fall Time
tf
NTE175
Rise Time
tr
Storage Time
ts
Fall Time
tf
VCC = 200V, IC = 1A
IB1 = IB2 = 125mA
VCC = 200V,
IC = 1A
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360
(9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter