2N3055 Silicon NPN Power Transistor Audio Power Amp, Medium

2N3055
Silicon NPN Power Transistor
Audio Power Amp, Medium Speed Switch
TO−3 Type Package
Description:
The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching
and amplifier applications.
Features:
D DC Current Gain: hFE = 20 − 70 @ IC = 4A
D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W
Note 1. Maximum Ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and
are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
VCEO(sus) IC = 200mA, IB = 0, Note 2
60
−
−
V
Collector−Emitter Sustaining Voltage
VCER(sus) IC = 200mA, RBE = 100, Note 2
70
−
−
V
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 30V, IB = 0
−
−
0.7
mA
ICEX
VCE = 100V, VBE(off) = 1.5V
−
−
1.0
mA
VCE = 100V, VBE(off) = 1.5V, TC = +150C
−
−
5.0
mA
VBE = 7V, IC = 0
−
−
5.0
mA
IEBO
Note 2. Pulse Test: Pulse Width  300s. Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 4A, VCE = 4V
20
−
70
IC = 10A, VCE = 4V
5
−
−
IC = 4A, IB = 400mA
−
−
1.1
V
IC = 10A, IB = 3.3A
−
−
3.0
V
IC = 4A, VCE = 4V
−
−
1.5
V
ON Characteristics (Note 2)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter ON Voltage
VBE(on)
Second Breakdown
Second Breakdown Collector Current
with Base Forward Biased
Is/b
VCE = 40V, t = 1.0s; Nonrepetitive
2.87
−
−
A
Current Gain−Bandwidth Product
fT
IC = 500mA, VCE = 10V, f = 1MHz
2.5
−
−
MHz
Small−Signal Current Gain
hfe
IC = 1A, VCE = 4V, f = 1kHz
15
−
120
Small−Signal Current Gain Cutoff
Frequency
fhfe
VCE = 4V, IC = 1A, f = 1kHz
10
−
−
Dynamic Characteristics
Note 2. Pulse Test: Pulse Width  300s. Duty Cycle  2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
kHz