NTE NTE385

NTE385
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
switch mode applications.
Features:
D Fast Turn–Off Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage (VBE = –1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCEO(sus) IC = 200mA, IB = 0, L = 25mH
400
–
–
V
VCEX = 850V, VBE(off) = 1.5V
–
–
0.2
mA
VCEV = 850V, VBE(off) = 1.5V, TC = +125°C
–
–
2.0
mA
VCE = 850V, RBE = 10Ω
–
–
0.5
mA
VCE = 850V, RBE = 10Ω, TC = +100°C
–
–
3.0
mA
VBE = 5V, IC = 0
–
–
0.1
mA
IE = 50mA, –IC = 0
7
–
–
V
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
ICEX
ICER
Emitter Cutoff Current
Emitter–Base Breakdown Voltage
IEBO
V(BR)EBO
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%, Vcl = 300V, VBE(off) = 5V, LC = 180µH.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VCE = 5V, IC = 10A
8
–
–
IC = 10A, IB = 2A
–
–
1.5
V
IC = 10A, IB = 2A, TC = +100°C
–
–
2.0
V
IC = 8A, IB = 1.6A
–
–
1.5
V
IC = 8A, IB = 1.6A, TC = +100°C
–
–
2.0
V
IC = 10A, IB = 2A
–
–
1.6
V
IC = 10A, IB = 2A, TC = +100°C
–
–
1.6
V
VCB = 10V, IE = 0, ftest = 1kHz
–
–
350
pF
VCC = 300V, IC = 10A, IB = 2A,
tp = 30µs,
µ Duty Cycle = 2%,
VBE(off) = 5V
–
0.1
0.2
µs
–
0.4
0.7
µs
ON Characteristics (Note 2)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Dynamic Characteristics
Output Capacitance
Cob
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
–
1.3
2.0
µs
Fall Time
tf
–
0.2
0.4
µs
–
1.3
–
µs
–
0.06
–
µs
–
1.5
2.5
µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time
tsv
Fall Time
tfi
Storage Time
tsv
Crossover Time
tc
–
0.3
0.6
µs
Fall Time
tfi
–
0.17 0.35
µs
IC = 10A, IB1 = 2A, TC = +25°C
IC = 10A, IB1 = 2A, TC = +100°C
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%, Vcl = 300V, VBE(off) = 5V, LC = 180µH.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
COLLECTOR
.312 (7.93) Min
BASE
Emitter
.215 (5.45)
.040 (1.02)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
EMITTER
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case