NTE555 Silicon Pin Diode UHF/VHF Detector Description: The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications. Features: D Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact D Very Low Capacitance: 1.0pF D Extremely Low Minority Carrier Lifetime: 100ps (Max) D High Reverse Voltage: VR = 50V D Low Reverse Leakage Current: IR = 200nA (Max) Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Forward Power Dissipation (TA = 25°C), PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Electrical Characteristics: (TA = +25°C, unless otherwise indicated) Parameter Reverse Breakdown Voltage Diode Capacitance Symbol V(BR)R CT Test Conditions Min Typ Max Unit IR = 10µA 50 – – V VR = 20V, f = 1MHz – 0.48 1.0 pF Minority Carrier Lifetime r IF = 5mA, Krakauer Method – 15 100 ps Reverse Leakage Current IR VR = 25V – 7 200 nA Forward Voltage VF IF = 10mA – 1.0 1.2 V Case Capactiance CC f = 1MHz – 0.1 – pF .162 (4.12) Max .027 (0.68) Max Cathode Anode .125 (3.17) Max .103 (2.6) Max .502 (12.76) Max .061 (1.54) Max .055 (1.4) Max .035 (0.88) Max .041 (1.04) Max .085 (2.15) Max .170 (4.31) Max