TIGER ELECTRONIC CO.,LTD LL4148/LL4448 High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High speed (trr≤4 ns) Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit Repetitive peak reverse voltage VRRM 100 V Reverse voltage VR 75 V IFSM 2 A IFRM 500 mA IF 300 mA IFAV 150 mA Power dissipation PV 500 mW Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Peak forward surge current Type tp=1μs Repetitive peak forward current Forward current Average forward current VR=0 Storage temperature range Maximum Thermal Resistance Tj=25℃ Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 500 K/W TIGER ELECTRONIC CO.,LTD LL4148/LL4448 Electrical Characteristics Tj=25℃ Parameter Test Conditions Forward voltage Reverse current Type Symbol Min IF=5mA LL4448 VF 0.62 IF=10mA LL4148 VF IF=100mA LL4448 VF Typ Max Unit 0.72 V 0.86 1 V 0.93 1 V VR=20V IR 25 nA VR=20V, Tj=150℃ IR 50 μA VR=75V IR 5 μA Breakdown voltage IR=100μA,tp/T=0.01,tp=0.3ms V(BR) 100 V Diode capacitance VR=0, f=1MHz, VHF=50mV CD Rectification efficiency VHF=2V, f=100MHz ηR Reverse recovery time IF= IR=10mA, iR=1mA trr 8 ns IF=10mA, VR=6V, iR=0.1×IR, trr 4 ns 4 45 % RL=100Ω Forward current: IF(mA) Forward current: IF(mA) Characteristics (Tj=25℃ unless otherwise specified) Forward voltage: VF(V) Figure 1. Forward current vs. forward voltage pF Forward voltage: VF(V) Figure 2. Forward current vs. forward voltage TIGER ELECTRONIC CO.,LTD Diode capacitance: CD(pF) Reverse leakage current: IR(nA) LL4148/LL4448 Reverse voltage: VR(V) Figure 3. Reverse current vs. reverse voltage Reverse voltage: VR(V) Figure 4. Diode capacitance vs. reverse voltage Dimensions in mm Φ1.5±0.1 Cathode identification 0.3 3.5±0.2 Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA