SavantIC Semiconductor Product Specification 2SB855 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -4 V -2 A 20 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SB855 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=6 -50 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown votage IE=-5mA; IC=0 -4 V Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A -1.2 V VBE Base-emitter voltage IC=-1A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -100 µA hFE-1 DC current gain IC=-1A ; VCE=-4V 35 hFE-2 DC current gain IC=-0.1A ; VCE=-4V 35 Transition frequency IC=-0.5A ; VCE=-4V VCEsat fT CONDITIONS hFE-1 classifications A B C 35-70 60-120 100-200 2 MIN TYP. MAX UNIT 200 35 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB855