SavantIC Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25? ) SYMBOL PARAMETER CONDITIONS 2SC1212 VCBO Collector-base voltage 50 Open base 2SC1212A VEBO Emitter-base voltage IC Collector current PD Total power dissipation V 80 2SC1212 Collector- emitter voltage UNIT 50 Open emitter 2SC1212A VCEO VALUE V 80 Open collector 4 V 1 A Ta=25? 0.75 TC=25? 8 W Tj Junction temperature 150 ? Tstg Storage temperature -55~ +150 ? SavantIC Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC1212 V(BR)CEO Collector-emitter breakdown voltage Collector-base breakdown voltage UNIT V 80 50 IC=1mA ;IE=0 2SC1212A V 80 Emitter-base breakdown voltage IE=1mA ;IC=0 Collector-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V VBE Base-emitter voltage IC=50mA ; VCE=4V 1.0 V ICBO Collector cut-off current VCB=50V; IE=0 5 µA hFE-1 DC current gain IC=50mA ; VCE=4V 60 hFE-2 DC current gain IC=1A ; VCE=4V 20 Transition frequency IC=30mA ; VCE=4V VCEsat fT u MAX 50 2SC1212 V(BR)EBO TYP. IC=10mA ;RBE=8 2SC1212A V(BR)CBO MIN hFE-1 Classifications B C 60-120 100-200 2 4 V 200 160 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1212 2SC1212A SavantIC Semiconductor Product Specification 2SC1212 2SC1212A Silicon NPN Power Transistors 4