TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR (NPN) TO-92L FEATURES Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. z 1.EMITTER 2.COLLECTOR 3.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units VCBO Collector-Base Voltage 30 60 V VCEO Collector-Emitter Voltage 25 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage 2SC1383 Test conditions MIN TYP MAX 30 UNIT V(BR)CBO IC=10μA ,IE=0 V(BR)CEO IC=2mA , IB=0 Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 Collector cut-off current ICBO VCB=20V, IE=0 hFE(1) VCE=10V, IC=500mA 85 hFE(2) VCE=5V, IC=1A 50 Collector-emitter saturation voltage VCE(sat) IC=500m A,IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V 2SC1384 Collector-emitter breakdown voltage 2SC1383 2SC1384 V 60 25 V 50 5 V 0.1 μA 340 DC current gain fT Transition frequency VCE=10V,IC=50mA 200 MHz CLASSIFICATION OF hFE(1) Rank Range Q R S 85-170 120-240 170-340 Typical Characteristics 2SC1383,4