UTC-IC 2SC2688-N-T60-C-K

UNISONIC TECHNOLOGIES CO., LTD
2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma
output circuits.
FEATURES
1
* High Electrostatic-Discharge-Resistance.
ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)
* Low Cre, High fT
Cre ≤3.0 pF (VCB=30V)
fT ≥50MHz (VCE=30V, IE=-10mA)
TO-126
*Pb-free plating product number: 2SC2688L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC2688-x-T60-A-K
2SC2688L-x-T60-A-K
2SC2688L-x-T60-A-K
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
Package
TO-126
Pin Assignment
1
2
3
E
C
B
Packing
Bulk
(1) K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126
(4) x: refer to Classification of hFE
(5) L: Lead Free Plating, Blank: Pb/Sn
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QW-R204-023,A
2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
300
V
300
V
5.0
V
200
mA
Ta=25℃
1.25
W
Total Power Dissipation
PD
TC=25℃
10
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
Collector Saturation Voltage
VCE(SAT)
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Gain Bandwidth Product
fT
Feedback Capacitance
Cre
Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2%
TEST CONDITIONS
IC=20mA, IB=5.0mA
VCB=200V, IE=0
VEB=5.0V, IC=0
VCE=10V, IC=10mA
VCE=30V, IE=-10mA
VCB=30V, IE=0, f=1.0MHz
MIN
TYP
40
50
80
80
MAX
1.5
100
100
250
UNIT
V
nA
nA
MHz
pF
3
CLASSIFICATION OF hFE
Rank
Range
N
40 ~ 80
M
60 ~ 120
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
L
100 ~ 200
K
16 ~ 250
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2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR
Open Collector
SW.
T.U.T
VD
C=2 300pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITION
1. E-B reverse bias
2.C=2300pF
3. Apply on shot pulse to T.U.T.
(Transistor Under the Test) by SW.
JUDGEMENT
Reject; BVEBO waveform defect
As a result if T.U.T. is not rejected,
apply higher voltage to capacitor and
test again.
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QW-R204-023,A
2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Ta=25℃)
8
6
2
Free Air
1.25
1.0
0.5
0.25
0
25 50 75 100 125 150
Ambient Temperature, Ta (℃)
14
12
3.0
150µA
10
8
100µA
6
4
IB =50µA
2
50
40
30
20
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to Emitter Voltage, VBE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25 50 75 100 125 150 175
Ambient Temperature, Ta (℃)
Collector Current vs.
Collector to Emitter Voltage
30µA
2.5
2.0
1.5
20µA
IB=10µA
1.0
0.5
0
50
100
150
Collector TO Emitter Voltage, VCE (V)
DC Current Gain vs. Collector
Current
VCE=10V
DC Current Gain, h FE
Collector Current vs. Base to
Emitter Voltage
70
VCE=10V
60
0
0
Collector Current vs.
Collector to Emitter Voltage
0
2 4
6
8 10 12 14
Collector TO Emitter Voltage, VCE (V)
Collector Current, I C (mA)
Total Power Dissipation Vs.
Ambinet Temperature
0.75
4
Collector Current, I C (mA)
Total Power Dissipation, PD (W)
Infinite Heat Sink
10
1.5
Collector Current, IC (mA)
Total Power Dissipation, PD (W)
Total Power Dissipation Vs.
Ambinet Temperature
200
100
50
10
5
1
0.1
0.5 1
5 10 50 100 5001000
Collector Current, IC (mA)
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2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
1.0
Base And Collector Saturation
Voltage vs. Collector Current
IC=10·I B
VBE(SAT)
Gain Banddwidth Product Vs.
Emitter Current
VCE=30V
200
0.5
100
0.1
0.05
0.01
0.1
Gain Bandwidth Product, fT (MHz)
10.0
5.0
Feedback Capacitance, Cre (pF)
Base Saturation Voltage, V BE (SAT) (V)
Collector Saturation Voltage, VCE (SAT) (V)
TYPICAL CHARACTERISTICS
VCE(SAT )
0.5 1
5 10 50 100 5001000
Collector Current, IC (mA)
50
10
-1
-5 -10
-50 -100
Emitter Current, I E (mA)
Feedback Capacitance
vs.Collector to Base Voltage
IE=0
f=1MHz
10
5
1
5 10
1
50 100
Collector to Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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