UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA) TO-126 *Pb-free plating product number: 2SC2688L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K 2SC2688L-x-T60-A-K (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package TO-126 Pin Assignment 1 2 3 E C B Packing Bulk (1) K: Bulk (2) refer to Pin Assignment (3) T60: TO-126 (4) x: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn 1 of 5 QW-R204-023,A 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATINGS UNIT 300 V 300 V 5.0 V 200 mA Ta=25℃ 1.25 W Total Power Dissipation PD TC=25℃ 10 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL Collector Saturation Voltage VCE(SAT) Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain Bandwidth Product fT Feedback Capacitance Cre Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2% TEST CONDITIONS IC=20mA, IB=5.0mA VCB=200V, IE=0 VEB=5.0V, IC=0 VCE=10V, IC=10mA VCE=30V, IE=-10mA VCB=30V, IE=0, f=1.0MHz MIN TYP 40 50 80 80 MAX 1.5 100 100 250 UNIT V nA nA MHz pF 3 CLASSIFICATION OF hFE Rank Range N 40 ~ 80 M 60 ~ 120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw L 100 ~ 200 K 16 ~ 250 2 of 5 QW-R204-023,A 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR Open Collector SW. T.U.T VD C=2 300pF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITION 1. E-B reverse bias 2.C=2300pF 3. Apply on shot pulse to T.U.T. (Transistor Under the Test) by SW. JUDGEMENT Reject; BVEBO waveform defect As a result if T.U.T. is not rejected, apply higher voltage to capacitor and test again. 3 of 5 QW-R204-023,A 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Ta=25℃) 8 6 2 Free Air 1.25 1.0 0.5 0.25 0 25 50 75 100 125 150 Ambient Temperature, Ta (℃) 14 12 3.0 150µA 10 8 100µA 6 4 IB =50µA 2 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 50 75 100 125 150 175 Ambient Temperature, Ta (℃) Collector Current vs. Collector to Emitter Voltage 30µA 2.5 2.0 1.5 20µA IB=10µA 1.0 0.5 0 50 100 150 Collector TO Emitter Voltage, VCE (V) DC Current Gain vs. Collector Current VCE=10V DC Current Gain, h FE Collector Current vs. Base to Emitter Voltage 70 VCE=10V 60 0 0 Collector Current vs. Collector to Emitter Voltage 0 2 4 6 8 10 12 14 Collector TO Emitter Voltage, VCE (V) Collector Current, I C (mA) Total Power Dissipation Vs. Ambinet Temperature 0.75 4 Collector Current, I C (mA) Total Power Dissipation, PD (W) Infinite Heat Sink 10 1.5 Collector Current, IC (mA) Total Power Dissipation, PD (W) Total Power Dissipation Vs. Ambinet Temperature 200 100 50 10 5 1 0.1 0.5 1 5 10 50 100 5001000 Collector Current, IC (mA) 4 of 5 QW-R204-023,A 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR 1.0 Base And Collector Saturation Voltage vs. Collector Current IC=10·I B VBE(SAT) Gain Banddwidth Product Vs. Emitter Current VCE=30V 200 0.5 100 0.1 0.05 0.01 0.1 Gain Bandwidth Product, fT (MHz) 10.0 5.0 Feedback Capacitance, Cre (pF) Base Saturation Voltage, V BE (SAT) (V) Collector Saturation Voltage, VCE (SAT) (V) TYPICAL CHARACTERISTICS VCE(SAT ) 0.5 1 5 10 50 100 5001000 Collector Current, IC (mA) 50 10 -1 -5 -10 -50 -100 Emitter Current, I E (mA) Feedback Capacitance vs.Collector to Base Voltage IE=0 f=1MHz 10 5 1 5 10 1 50 100 Collector to Base Voltage, VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R204-023,A