DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3356 50 pcs (Non reel) • 8 mm wide embossed taping 2SC3356-T1 3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V IC 100 mA 200 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10209EJ01V0DS (1st edition) (Previous No. P10356EJ5V1DS00) Date Published January 2003 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 1985, 2003 2SC3356 ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA – – 1.0 µA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA – – 1.0 µA VCE = 10 V, IC = 20 mA 50 120 250 – VCE = 10 V, IC = 20 mA – 7 – GHz S21e VCE = 10 V, IC = 20 mA, f = 1 GHz – 11.5 – dB NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 2.0 dB VCB = 10 V, IE = 0 mA, f = 1 MHz − 0.55 1.0 pF hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Noise Figure Cre Reverse Transfer Capacitance Note 2 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank R23/Q Note R24/R Note R25/S Note Marking R23 R24 R25 hFE Value 50 to 100 80 to 160 125 to 250 Note Old Specification/New Specification 2 Data Sheet PU10209EJ01V0DS 2SC3356 TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 Free air 200 150 100 50 0 25 50 75 100 125 150 1 0.5 0.3 0.2 0.5 1 2 5 10 20 30 Collector to Base Voltage VCB (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 Gain Bandwidth Product fT (GHz) VCE = 10 V 100 50 20 10 0.5 1 5 10 VCE = 10 V 5 2 1 0.5 0.2 0.1 0.1 50 0.5 1 5 10 50 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT 25 15 Insertion Power Gain |S21e|2 (dB) DC Current Gain hFE f = 1 MHz Ambient Temperature TA (˚C) 200 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 2 MAG 20 |S21e|2 15 10 5 VCE = 10 V IC = 20 mA 0 0.05 0.1 0.2 0.5 1 VCE = 10 V f = 1 GHz 10 2 Frequency f (GHz) 5 0 0.5 1 5 10 50 70 Collector Current IC (mA) Data Sheet PU10209EJ01V0DS 3 2SC3356 NOISE FIGURE vs. COLLECTOR CURRENT f = 1 GHz IC = 20 mA Noise Figure NF (dB) Noise Figure NF (dB) 6 5 4 3 2 15 5 VCE = 10 V f = 1 GHz 4 12 |S21e|2 3 9 2 6 NF 1 3 1 0 0.5 1 5 10 50 70 0 2 4 6 8 0 10 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ 4 Data Sheet PU10209EJ01V0DS Insertion Power Gain |S21e|2 (dB) 7 NOISE FIGURE, INSERTION POWER GAIN vs. COLLECTOR TO EMITTER VOLTAGE 2SC3356 SMITH CHART S11e, S22e-FREQUENCY CONDITION : VCE = 10 V, 200 MHz Step 1.4 1.2 1.0 0.9 1.6 0.6 0. 18 32 1.8 0. 50 2.0 5 0. T EN 0.4 4 0. 0 3. 30 C 0.6 O 0.8 1 0 .2 9 0.2 ( –Z–+–J–XTANCE CO ) MPO N 0.1 0.3 7 3 0 0.2 0 0.3 0 1. 8 20 6.0 0.6 0.4 0.1 20 10 4.0 3.0 1.8 2.0 1.6 1.4 0.7 0.8 0.6 0.5 0.4 0.3 5.0 50 0.2 1.2 0.2 GHz IC = 20 mA 10 IC = 5 mA 0.2 GHz 8 0. 0 IC = 20 mA 1. 5.0 1.0 ( 0.8 0.2 GHz 0.6 E IV AT 0 3. −4 0 IC = 5 mA NE G 0.4 5 0. 0. 31 19 2.0 1.8 1.6 1.4 −70 0.35 0.15 1.2 4 0.3 6 0.1 0.36 0.14 −80 1.0 0 0.8 3 0.3 7 0.2 −6 0.9 0.1 0.38 0.39 0.12 0.11 −100 −90 0.37 0.13 0.40 0.10 −11 0 0. 4 0. 3 07 30 −1 0.6 32 18 0. 0. 0 0.7 −5 0. 0.3 0.2 0 0 E NC TA X AC −J––O– RE –Z ) 4.0 30 4 0. 0.27 0.2 0 .2 8 3 0 0.2 .2 2 9 −20 0.2 1 − S22e 0.6 0.2 −10 0.4 0.26 0.24 20 0.9 1.0 ) 0 ( 50 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO 0.24 0.26 20 0.2 0.3 0.2 0.8 0.23 0.27 10 10 S11e 2 1. 2.0 GHz 0.2 4.0 0 0.2 WAVELE 60 40 NGTH 0 S 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF FCIENT 0.4 0.0TOR 3 HS TO LE OF REF 6 I 7 N .0 DEG 0NGT ANG 4 0.4 R 0 E E 0.4 ES 6 L 0 .0W4AVE −1 0.0 6 0 5 15 0 0.4 5 0.4 5 0 15 0 − . 5 0 0. 4 0 4 POS T 0.1 14 0.4 6 0. 06 ITIV NEN 40 0 ER 4 PO M 0. −1 E A CO 0.1 6 0.3 4 70 0.2 0.1 0.4 1 0.0 0.4 9 0 2 −1 .08 20 0.3 0.15 0.35 19 0. 31 0. 07 43 0. 0 13 0. 0.14 0.36 80 90 0.7 8 0.0 2 0.4 20 1 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.8 9 0.0 1 0.4 S21e-FREQUENCY S12e-FREQUENCY CONDITION : VCE = 10 V, IC = 20 mA CONDITION : VCE = 10 V, IC = 20 mA 90˚ 90˚ 120˚ 2.0 GHz 60˚ 120˚ 60˚ 0.2 GHz S12e 150˚ 30˚ S21e 150˚ 30˚ 0.2 GHz 180˚ 2.0 GHz 5 10 15 –150˚ 20 0˚ 180˚ –30˚ –60˚ –120˚ 0.05 0.1 0.15 –150˚ 0.2 0.25 0˚ –30˚ –60˚ –120˚ –90˚ –90˚ Data Sheet PU10209EJ01V0DS 5 2SC3356 PACKAGE DIMENSIONS 3-PIN MINIMOLD (UNIT: mm) 0.65+0.1 –0.15 1 3 0.4+0.1 –0.05 0.95 2 0.95 1.5 Marking 0 to 0.1 1.1 to 1.4 0.16+0.1 –0.05 0.3 2.9±0.2 0.4+0.1 –0.05 2.8±0.2 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 6 Data Sheet PU10209EJ01V0DS 2SC3356 • The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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