Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1533 Unit: mm 5.0±0.2 4.0±0.2 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.7±0.1 13.5±0.5 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Allowing supply with the radial taping. 0.7±0.2 ● +0.15 0.45 –0.1 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 ● 8.0±0.2 ■ Features 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 2.54±0.15 (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 20V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 80 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 80 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 Forward current transfer ratio *1 VCE = 10V, IC = 150mA*2 130 330 hFE2 VCE = 5V, IC = 500mA*2 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 120 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 50 100 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 1 2SC3939 Transistor PC — Ta IC — VCE 1.2 IC — I B 1.2 1.2 1.0 0.8 0.6 0.4 0.2 8mA 7mA 0.8 6mA 5mA 0.6 4mA 3mA 0.4 2mA 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 IC/IB=10 8 10 0 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 30 10 3 25˚C Ta=–25˚C 1 10 30 100 300 75˚C 0.3 0.1 0.03 1000 3 10 100 300 1000 40 –10 Ta=75˚C 200 25˚C –25˚C 150 100 50 3 –30 Emitter current IE (mA) –100 10 30 100 300 1000 Collector current IC (mA) ICBO — Ta 104 VCB=20V IE=0 f=1MHz Ta=25˚C 40 103 30 20 102 10 10 0 –3 250 1 ICBO (Ta) ICBO (Ta=25˚C) 80 0 –1 30 50 Collector output capacitance Cob (pF) 120 10 VCE=10V Cob — VCB 160 8 300 Collector current IC (mA) VCB=10V Ta=25˚C 6 0 1 fT — IE 200 4 hFE — IC 0.01 3 2 Base current IB (mA) IC/IB=10 Collector current IC (mA) Transition frequency fT (MHz) 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 4 VBE(sat) — IC 10 1 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.1 0.6 0 0 Forward current transfer ratio hFE 20 0.8 0.2 1mA 0 0 2 1.0 9mA 0.2 0 VCE=10V Ta=25˚C IB=10mA Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 1 1 3 10 30 100 Collector to base voltage VCB (V) 0 60 120 180 Ambient temperature Ta (˚C) 2SC3939 Transistor ICEO — Ta 105 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 Collector current IC (A) ICEO (Ta) ICEO (Ta=25˚C) 104 103 102 1 ICP t=10ms IC 0.3 t=1s DC 0.1 0.03 0.01 10 0.003 1 0 20 40 60 80 100 120 140 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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