Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1534 and 2SA1534A Unit: mm 5.0±0.2 4.0±0.2 Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. Parameter Symbol Collector to 2SC3940 base voltage 2SC3940A Collector to 2SC3940 Ratings 30 VCBO Unit V 60 +0.15 0.45 –0.1 25 VCEO emitter voltage 2SC3940A 0.7±0.1 (Ta=25˚C) 1.27 V 50 Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 13.5±0.5 ■ Absolute Maximum Ratings 0.7±0.2 ● 1.27 +0.15 0.45 –0.1 2.3±0.2 ● 8.0±0.2 ■ Features 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 2.54±0.15 (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA ICBO VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 5 hFE1*1 VCE = 10V, IC = 500mA*2 85 hFE2 VCE = 5V, IB = 1A*2 50 VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 Base to emitter saturation voltage VBE(sat) IB = 500mA, Ia = 50mA*2 0.85 1.2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 Collector cutoff current Collector to base 2SC3940 voltage 2SC3940A Collector to emitter 2SC3940 voltage 2SC3940A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage 30 V 60 25 V 50 V 340 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SC3940, 2SC3940A PC — Ta IC — VCE 1.2 IC — I B 1.5 1.2 1.25 0.8 0.6 0.4 0.2 8mA 1.0 7mA 6mA 0.75 5mA 4mA 3mA 0.5 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 0.3 120 80 40 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 –30 6 VCE=10V Cob — VCB 160 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 10 0.01 0.01 0.03 10 Collector output capacitance Cob (pF) Transition frequency fT (MHz) 10 30 fT — IE 0 –1 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 0.8 0.2 1mA 0 0 2 1.0 IB=10mA 9mA 0.25 0 VCE=10V Ta=25˚C Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IC=10mA Ta=25˚C 100 80 60 2SC3940A 40 2SC3940 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistor 2SC3940, 2SC3940A ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 10 IC t=10ms 0.3 t=1s 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 2SC3940A ICEO (Ta) ICEO (Ta=25˚C) 102 1 2SC3940 Collector current IC (A) ICP 103 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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