2SC6084 Ordering number : ENA0630 SANYO Semiconductors DATA SHEET 2SC6084 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V IC 5 A Collector Current Collector Current (Pulse) ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 12 A 1.75 W 50 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) DC Current Gain Fall Time hFE1 hFE2 tf Conditions Ratings min typ VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4V, IC=0A 10 µA 1.0 mA 1.0 mA 800 IC=2.7A, IB=0.54A IC=2.7A, IB=0.54A VCE=5V, IC=0.5A VCE=5V, IC=3A Unit max V 3 V 1.5 V 10 5 IC=1.8A, IB1=0.36A, IB2=--0.72A 7 0.2 µs Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306KC TI IM TB-00002398 No. A0630-1/4 2SC6084 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7507-001 4.5 10.2 3.6 5.1 OUTPUT IB2 1.3 INPUT RB VR RL=111Ω 6.3 + 50Ω 15.1 2.7 IB1 PW=20µs D.C.≤1% + 18.0 100µF 470µF (5.6) VBE= --5V 14.0 0.8 0.4 1 2 3 1 : Base 2 : Collector 3 : Emitter 2.7 2.55 SANYO : TO-220 IC -- VCE 5.0 4.0 3.5 3.0 0.4A 0.6A 0.5A 0.3A 0.2A 0.9A 0.8A 0.7A 2.5 2.0 0.1A 0.05A 1.0A 1.5 1.1A 1.0 0 0 1 2 3 4 5 6 7 8 9 0 2 10 7 5 3 2 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 0.2 0.4 2 3 5 7 10 IT11932 0.6 0.8 1.0 1.2 1.4 Base-to-Emitter Voltage, VBE -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 25°C --40°C 3 1.5 7 5 1.6 IT11931 VCE(sat) -- IC 10 Ta=120°C 2 2.0 IT11930 7 1.0 0.01 2.5 0 VCE=5V 3 3.0 10 hFE -- IC 2 5 3.5 0.5 IB=0A Collector-to-Emitter Voltage, VCE -- V 100 4.0 1.0 1.2A 1.3A 0.5 VCE=5V 4.5 --40°C A 0°C 25°C 1.5 Collector Current, IC -- A Collector Current, IC -- A 4.5 IC -- VBE 5.0 1.4A Ta=1 2 2.55 DC Current Gain, hFE VCC=200V 1.2 IC / IB=5 3 2 1.0 7 5 C 0° 3 2 25 2 =1 °C Ta 0.1 °C --40 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT11933 No. A0630-2/4 2SC6084 SW Time -- IC tstg 3 2 1.0 7 5 3 2 tf 0.1 0.1 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A =1 00 s s op on ati er 0.1 7 5 3 2 0.01 7 5 3 Tc=25°C 2 Single pulse 0.001 2 3 5 7 10 1.0 2 2 3 5 7 2 1.0 3 IT11935 Reverse Bias A S O L=500µH IB2= --1.0A Tc=25°C Single pulse 7 5 3 2 1.0 7 5 2 2 3 5 7 100 2 3 0.1 10 5 7 1000 IT11936 PC -- Ta Collector Dissipation, PC -- W 1.4 N o he at 1.0 3 5 sin k 0.8 0.6 0.4 7 100 2 3 5 7 1000 2 3 5 IT11937 PC -- Tc 60 1.6 1.2 2 Collector-to-Emitter Voltage, VCE -- V 1.8 1.75 Collector Dissipation, PC -- W 3 3 Collector-to-Emitter Voltage, VCE -- V 2.0 5 10 µs Collector Current, IC -- A 0µ s m 7 2 1m 10 DC Collector Current, IC -- A 30 0W 1.0 Base Current, IB2 -- A PT 1.0 7 5 3 2 2 3 IC=5A PC =5 tst g 3 IT11934 ICP=12A 10 7 5 3 2 5 0.1 0.1 7 Forward Bias A S O 3 2 VCC=200V IC=1.8A IB1=0.36A R load 7 tf Switching Time, SW Time -- µs 5 SW Time -- IB2 10 VCC=200V IC / IB2=5 IB2 / IB1=2 R load Switching Time, SW Time -- µs 7 50 40 30 20 10 0.2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11938 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11939 No. A0630-3/4 2SC6084 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0630-4/4