2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 2SD1862 2.5±0.2 4.4±0.2 0.9 0.5±0.1 (1) (2) 14.5±0.5 1.0 0.65Max. (3) 2.54 2.54 1.05 ROHM : ATV 0.45±0.1 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V 2 A (DC) Collector current Collector power dissipation IC 0.5 2SD1766 2SD1758 2.5 PC 2SD1862 2 10 A (Pulse) ∗1 W W Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 Single pulse, PW=20ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager. ∗2 W (TC=25°C) 1 0.9 2.3±0.2 0.55±0.1 1.0±0.2 (1) (2) (3) (1) Base (2) Collector (3) Emitter 6.8±0.2 2.3+0.2 −0.1 0.5±0.1 0.65±0.1 0.75 2.3±0.2 3.0±0.2 C0.5 9.5±0.5 5.5+0.3 −0.1 (1) !Structure Epitaxial planar type NPN silicon transistor 6.5±0.2 5.1+0.2 −0.1 1.5 1.5±0.3 0.2 1.5 + −0.1 1.6±0.1 2.5 +0.2 −0.1 4.0±0.3 0.5±0.1 0.2 4.5+ −0.1 2.5 2SD1766 0.9 !Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 ∗3 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SD1766 / 2SD1758 / 2SD1862 Transistors !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 40 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 1 µA VCB=20V Emitter cutoff current IEBO − − 1 µA VEB=4V 82 − 390 DC current transfer ratio 2SD1766,2SD1758 hFE Conditions VCE=3V, IC=0.5A IC/IB=2A/0.2A ∗ VCE=5V, IE=−50mA, f=100MHz ∗ 120 − 390 VCE(sat) − 0.5 0.8 V Transition frequency fT − 100 − MHz Output capacitance Cob − 30 − pF 2SD1862 Collector-emitter saturation voltage ∗ − VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current. !Packaging specifications and hFE Package Taping Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − Type hFE 2SD1766 PQR 2SD1758 PQR − 2SD1862 QR − − − hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 !Electrical characteristic curves 500 200 100 50 20 10 5 Ta=25°C Ta=25°C 2.7mA 3.0mA 500 2.4mA 0.4 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 1000 Ta=25°C VCE=3V COLLECTOR CURRENT : IC (A) 0.5 2000 2.1mA 1.8mA 0.3 1.5mA 1.2mA 0.2 0.9mA 0.6mA 0.1 200 VCE=3V 1V 100 50 0.3mA 2 1 0 IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 20 5 10 20 50 100 200 500 1A 2A COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current 2SD1766 / 2SD1758 / 2SD1862 Ta=25°C 500 200 100 IC/IB=50 50 20 5 10 10 20 IC/IB=10 0.5 0.2 0.1 5 50 100 200 500 1A 2A COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 100 Cob 20 0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3 PW =1 s 0 =1 0m PW Ic Max Ic Max Pulse 0m s 0.5 DC 0.2 0.1 0.05 Ta=25°C Single nonrepetitive pulse 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1862) COLLECTOR CURRENT : IC (A) Cib 200 50 200 100 50 20 −1 500 1A 2A -2 5 1 0.2 −50 −100−200 −500 −1A Fig.6 Transition frequency vs. emitter current 2 0.5 −5 −10 −20 EMITTER CURRENT : IE (mA) 5 Ta=25°C f=1MHz IE=0A IC=0A 500 1 50 100 200 Fig.5 Collector-emitter saturation voltage vs. collector current 1000 2 10 20 Ta=25°C VCE=5V 500 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current COLLECTOR CURRENT : IC (A) 1 COLLECTOR CURRENT : IC (mA) 10 Ta=25°C COLLECTOR CURRENT : IC (A) 20 1000 2 TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors PW=10ms∗ 100ms∗ DC 0.1 0.05 Ta=25°C ∗Single 0.02 nonrepetitive pulse 0.01 0.1 0.2 0.5 1 2 1 0.2 0.1 0.05 0.02 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1766) PW=100ms∗ 0.5 TC=25°C ∗Single nonrepetitive pulse 0.01 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SD1758)