2SD2656 Transistors General purpose amplification (30V, 1A) 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 !Application Low frequency amplifier 0.7 2SD2656 1.25 !Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 350mV At IC = 500mA / IB = 25mA 0.1Min. 0~0.1 0.15 0.2 2.1 Each lead has same dimensions ROHM : UMT3 Abbreviated symbol : EU EIAJ : SC-70 JEDEC : SOT-323 (1) Emitter (2) Base (3) Collector !External dimensions (Units : mm) !Packaging specifications !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Type IC 1 A 2 A ∗ 2SD2656 ICP Power dissipation PC 200 mW Junction temperature Tj 150 °C Tstg −55~+150 °C Collector current Range of storage temperature Package Taping Code T106 Basic ordering unit (pieces) 3000 ∗Single pulse, PW=1ms !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA ICBO − − 100 nA VCB=30V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance IEBO − − 100 nA VEB=6V VCE(sat) − 140 350 mV IC/IB=500mA/25mA hFE 270 − 680 − VCE/IC=2V/100mA fT − 400 − Cob − 5 − ∗1 MHz VCE=2V, IE=−100mA, f=100MHz ∗1 pF VCB=10V, IE=0A, f=1MHz ∗1 Pulsed 1/2 2SD2656 Transistors BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 Ta=25°C Ta=−40°C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Ta=25°C Ta=100°C Ta=−40°C 0.01 0.001 0 0.5 1.0 VBE(sat) Ta=−40°C Ta=25°C Ta=100°C 1 Ta=100°C 0.1 VCE(sat) Ta=−40°C 0.01 0.001 0.01 100 10 100 IC/IB=50/1 IC/IB=20/1 0.01 IC/IB=10/1 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) VCE=2V Ta=25°C f=100MHz 0.1 100 tf tr 10 Ta=25°C VCE=5V IC/IB=20/1 1 0.01 1 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time 10 COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1 0.1 tstg IC=0A f=1MHz Ta=25°C 0.1 1 1000 Fig.5 Gain bandwidth product vs. emitter current 10 Ta=25°C VCE=2V Fig.3 Collector-emitter saturation voltage vs. collector current EMITTER CURRENT : IE (A) Cob 10 tdon Fig.4 Grounded emitter propagation characteristics 1 0.01 1 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) Cib 0.1 10 0.01 1.5 100 Ta=25°C 1000 VCE=2V Pulsed 0.1 =20/1 IC/IB=20 Pulsed Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 10 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves 1m s 1 10 ms PW =1 0.1 DC 00 Op era ms tio n 0.01 Ta=25°C Single Pulse 0.001 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Safe Operating Area 2/2