2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Transistors General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S !External dimensions (Units : mm) 0.2 Each lead has same dimensions (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 2SC1740S 0.13 0~0.1 0.22 (1) 0.5 3Min. (15Min.) 0.8 (2) (3) 2±0.2 3±0.2 0.2 0.4 0.4 1.2 0.32 4±0.2 1.2 0.8 0.2 0.45+0.15 −0.05 0.15Max. 2.5 +0.4 −0.1 5 0.5 0.45 +0.15 −0.05 (1) (2) (3) ROHM : VMT3 (1) Base (2) Emitter (3) Collector ROHM : SPT EIAJ : SC-72 Abbreviated symbol: B* * Denotes hFE !Absolute maximum (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V IC 0.15 A Collector current 0.2 2SC2412K, 2SC4081 Collector power 2SC4617, 2SC5658 dissipation 2SC1740S PC 1.6 0.7 0.55 0.1Min. 0~0.1 0~0.1 0.9 0.15 1.6 Each lead has same dimensions ROHM : SMT3 Abbreviated symbol: B* Parameter 1.0 0.2 0.2 0.3 0.8 0.7 0.15 1.1 0.8 0~0.1 0.1Min. (2) (3) 2.1 2.8 0.5 0.5 2.0 1.3 (1) (2) (3) 0.3 (2) (1) 1.25 1.6 0.3Min. !Structure Epitaxial planar type NPN silicon transistor 2SC4617 0.65 0.65 (1) 2SC4081 0.95 0.95 1.9 (3) 0.4 2SC2412K 0.15 !Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. 0.15 W 0.3 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C (1) Emitter (2) Collector (3) Base 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA Collector cutoff current ICBO − − 0.1 µA VCB=60V Emitter cutoff current IEBO − − 0.1 µA VEB=7V DC current transfer ratio hFE 120 − 560 − VCE=6V, IC=1mA VCE(sat) − − 0.4 V IC/IB=50mA/5mA Transition frequency fT − 180 − MHz Output capacitance Cob − 2 3.5 pF Collector-emitter saturation voltage Conditions VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz !Packaging specifications and hFE Taping Package Type hFE 2SC2412K QRS Bulk Code T146 T106 TL T2L TP Basic ordering unit (pieces) 3000 3000 3000 8000 5000 − − − − − − − − − 2SC4081 QRS − 2SC4617 QRS − − 2SC5658 QRS − − − 2SC1740S QRS − − − − − hFE values are classified as follows : Item Q R S hFE 120~270 180~390 270~560 !Electrical characterristic curves 10 2 1 25°C −55°C 5 0.5 0.2 0.1 0 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 COLLECTOR CURRENT : IC (mA) 20 Ta=100°C COLLECTOR CURRENT : IC (mA) VCE=6V Grounded emitter propagation characteristics 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) 10 COLLECTOR CURRENT : IC (mA) 100 50 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) Transistors 500 DC CURRENT GAIN : hFE VCE=5V 3V 1V 200 100 50 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 0.2 0.5 1 2 5 10 20 25°C 200 −55°C 100 50 20 10 0.2 50 100 200 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 0.5 IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.1 0.05 0.02 0.01 0.2 5 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) Ta=25°C f=1MHz IE=0A IC=0A 2 5 10 20 50 100 100 50 20 10 −0.2 −0.5 −1 −2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 −5 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 Fig.9 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 0.2 EMITTER CURRENT : IE (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 Cib 2 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 0.5 1 Ta=25°C Fig. 6 Collector-emitter saturation voltage vs. collector current Ta=100°C 25°C −55°C 0.2 0.5 COLLECTOR CURRENT : IC (mA) IC/IB=50 COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE=5V Ta=100°C TRANSITION FREQUENCY : fT (MHz) Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current