2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.) A L 3 3 C B Top View CLASSIFICATION OF hFE 1 1 Product-Rank 2SD2114-V 2SD2114-W Range 820~1800 1200~2700 Marking BBV BBW K 2 E 2 D F PACKAGE INFORMATION REF. Package MPQ LeaderSize SOT-23 3K 7’ inch H G A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 25 20 12 500 250 150, -55~150 V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance On Resistance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob R(on) 25 20 12 820 - 350 8 0.8 0.5 0.5 2700 0.4 - V V V µA µA http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. B V MHz pF Ω Test Conditions IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=10V, IC=0 VCE=3V, IC=10mA IC=500mA, IB=20mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz Vin=0.1V(rms), IB=1mA, f=1KHz Any changes of specification will not be informed individually. Page 1 of 3 2SD2114 Elektronische Bauelemente 0.5A , 25V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 2SD2114 Elektronische Bauelemente 0.5A , 25V NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 3