PESD5Zx series Low capacitance unidirectional ESD protection diodes Rev. 02 — 4 April 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. Table 1. Product overview Type number PESD5Z2.5 Package Configuration NXP JEITA SOD523 SC-79 single PESD5Z3.3 PESD5Z5.0 PESD5Z6.0 PESD5Z7.0 PESD5Z12 1.2 Features n n n n ESD protection of one line Low diode capacitance Max. peak pulse power: PPP = 260 W Low clamping voltage: VCL = 15 V n n n n Low leakage current: IRM < 1 nA ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 20 A 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n 10/100/1000 Mbit/s Ethernet n Communication systems n Portable electronics n Subscriber Identity Module (SIM) card protection n FireWire n High-speed data lines PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD5Z2.5 - - 2.5 V PESD5Z3.3 - - 3.3 V PESD5Z5.0 - - 5.0 V PESD5Z6.0 - - 6.0 V PESD5Z7.0 - - 7.0 V PESD5Z12 - - 12.0 V PESD5Z2.5 - 229 300 pF PESD5Z3.3 - 172 200 pF PESD5Z5.0 - 89 150 pF PESD5Z6.0 - 78 150 pF Per diode VRWM reverse standoff voltage diode capacitance Cd f = 1 MHz; VR = 0 V PESD5Z7.0 - 69 150 pF PESD5Z12 - 35 75 pF 2. Pinning information Table 3. Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5Z2.5 SC-79 plastic surface-mounted package; 2 leads SOD523 PESD5Z3.3 PESD5Z5.0 PESD5Z6.0 PESD5Z7.0 PESD5Z12 PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 2 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 4. Marking Table 5. Marking codes Type number Marking code PESD5Z2.5 N7 PESD5Z3.3 N8 PESD5Z5.0 N9 PESD5Z6.0 NA PESD5Z7.0 NB PESD5Z12 NC 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit peak pulse power tp = 8/20 µs PESD5Z2.5 - 260 W PESD5Z3.3 - 260 W PESD5Z5.0 - 180 W PESD5Z6.0 - 180 W PESD5Z7.0 - 180 W PESD5Z12 - 200 W PESD5Z2.5 - 20 A PESD5Z3.3 - 20 A PESD5Z5.0 - 10 A PESD5Z6.0 - 10 A PESD5Z7.0 - 10 A PESD5Z12 - 6 A Per diode PPP peak pulse current IPP tp = 8/20 µs [1][2] [1][2] Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 2. PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 3 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes Table 7. ESD maximum ratings Symbol Parameter Conditions Min Max Unit - 30 kV machine model - 400 V MIL-STD-883 (human body model) - 10 kV Per diode electrostatic discharge voltage VESD PESD5Zx series [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 2. Table 8. [1][2] IEC 61000-4-2 (contact discharge) ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % t tr = 0.7 ns to 1 ns 0 0 10 20 30 30 ns 40 t (µs) Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 4 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 6. Characteristics Table 9. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PESD5Z2.5 - - 2.5 V PESD5Z3.3 - - 3.3 V PESD5Z5.0 - - 5.0 V PESD5Z6.0 - - 6.0 V PESD5Z7.0 - - 7.0 V PESD5Z12 - - 12.0 V Per diode VRWM IRM VBR reverse standoff voltage reverse leakage current PESD5Z2.5 VRWM = 2.5 V - 0.5 6 µA PESD5Z3.3 VRWM = 3.3 V - 8 50 nA PESD5Z5.0 VRWM = 5.0 V - 5 50 nA PESD5Z6.0 VRWM = 6.0 V - 2 10 nA PESD5Z7.0 VRWM = 7.0 V - <1 10 nA PESD5Z12 VRWM = 12.0 V - <1 10 nA PESD5Z2.5 4 - - V PESD5Z3.3 5 - - V PESD5Z5.0 6.2 - - V PESD5Z6.0 6.8 - - V PESD5Z7.0 7.5 - - V 14.1 - - V PESD5Z2.5 - 229 300 pF PESD5Z3.3 - 172 200 pF PESD5Z5.0 - 89 150 pF PESD5Z6.0 - 78 150 pF PESD5Z7.0 - 69 150 pF - 35 75 pF PESD5Z2.5 - 8 9 V PESD5Z3.3 - 8 10 V PESD5Z5.0 - 12 13 V PESD5Z6.0 - 12 13 V PESD5Z7.0 - 14 15 V PESD5Z12 - 27 30 V breakdown voltage IR = 1 mA PESD5Z12 Cd diode capacitance f = 1 MHz; VR = 0 V PESD5Z12 VCL clamping voltage IPP = 5 A PESD5ZX_SER_2 Product data sheet [1][2] © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 5 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes Table 9. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter VCL Conditions clamping voltage Typ Max Unit PESD5Z2.5 IPP = 20 A - - 15 V PESD5Z3.3 IPP = 20 A - - 18 V PESD5Z5.0 IPP = 10 A - - 18 V PESD5Z6.0 IPP = 10 A - - 18 V PESD5Z7.0 IPP = 10 A - - 19 V IPP = 6 A - - 35 V PESD5Z2.5 - - 60 Ω PESD5Z3.3 - - 10 Ω PESD5Z5.0 - - 15 Ω PESD5Z6.0 - - 15 Ω PESD5Z7.0 - - 15 Ω PESD5Z12 - - 40 Ω PESD5Z12 differential resistance rdif Min [1][2] IR = 5 mA [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 2. 006aab056 104 001aaa193 1.2 PPP (W) PPP PPP(25°C) 103 0.8 (1) (2) 102 0.4 10 1 1 10 102 103 104 0 0 tp (µs) 50 100 150 200 Tj (°C) Tamb = 25 °C (1) PESD5Z2.5; PESD5Z3.3 (2) PESD5Z5.0; PESD5Z6.0; PESD5Z7.0; PESD5Z12 Fig 3. Peak pulse power as a function of exponential pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 6 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 006aab057 250 006aab058 100 Cd (pF) Cd (pF) 80 200 60 150 (1) 100 40 (2) (1) (2) (3) 50 20 0 (3) 0 0 1 2 3 4 5 0 4 8 VR (V) 12 VR (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C (1) PESD5Z2.5 (1) PESD5Z6.0 (2) PESD5Z3.3 (2) PESD5Z7.0 (3) PESD5Z5.0 (3) PESD5Z12 Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values I 006aab059 10 IR IR(25°C) −VCL −VBR −VRWM V −IRM −IR 1 − + P-N 10−1 −100 −50 0 50 100 −IPP 150 Tj (°C) 006aaa407 PESD5Z2.5; VRWM = 2.5 V PESD5Z3.3; VRWM = 3.3 V IR is less than 50 nA at 150 °C for: PESD5Z5.0; VRWM = 5.0 V PESD5Z6.0; VRWM = 6.0 V PESD5Z7.0; VRWM = 7.0 V PESD5Z12; VRWM = 12.0 V Fig 7. Relative variation of reverse current as a function of junction temperature; typical values Fig 8. V-I characteristics for a unidirectional ESD protection diode PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 7 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes ESD TESTER acc. to IEC 61000-4-2 CZ = 150 pF; RZ = 330 Ω 4 GHz DIGITAL OSCILLOSCOPE 450 Ω RZ RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω CZ DUT (DEVICE UNDER TEST) vertical scale = 10 A/div horizontal scale = 15 ns/div vertical scale = 10 A/div horizontal scale = 15 ns/div GND GND unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 20 V/div horizontal scale = 100 ns/div GND GND vertical scale = 20 V/div horizontal scale = 100 ns/div clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 006aab060 Fig 9. ESD clamping test setup and waveforms for PESD5Z2.5 PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 8 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes vertical scale = 20 V/div horizontal scale = 100 ns/div GND vertical scale = 20 V/div horizontal scale = 100 ns/div GND 006aab061 006aab062 Fig 10. PESD5Z3.3: Clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 11. PESD5Z3.3: Clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 20 V/div horizontal scale = 100 ns/div GND vertical scale = 20 V/div horizontal scale = 100 ns/div GND 006aab063 006aab064 Fig 12. PESD5Z5.0: Clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 13. PESD5Z5.0: Clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 9 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes vertical scale = 20 V/div horizontal scale = 100 ns/div GND vertical scale = 20 V/div horizontal scale = 100 ns/div GND 006aab065 006aab066 Fig 14. PESD5Z6.0: Clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 15. PESD5Z6.0: Clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 20 V/div horizontal scale = 100 ns/div GND vertical scale = 20 V/div horizontal scale = 100 ns/div GND 006aab067 006aab068 Fig 16. PESD5Z7.0: Clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 17. PESD5Z7.0: Clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 10 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes vertical scale = 20 V/div horizontal scale = 100 ns/div GND vertical scale = 20 V/div horizontal scale = 100 ns/div GND 006aab069 Fig 18. PESD5Z12: Clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 006aab070 Fig 19. PESD5Z12: Clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 11 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 7. Application information The PESD5Zx series is designed for the protection of one unidirectional data or signal line from the damage caused by ESD and surge pulses. The device may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD5Zx series provides a surge capability of 260 W per line for an 8/20 µs waveform. line to be protected (positive signal polarity) line to be protected (negative signal polarity) PESD5Zx PESD5Zx ground ground unidirectional protection of one line 006aab071 Fig 20. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESD5Zx as close to the input terminal or connector as possible. 2. The path length between the PESD5Zx and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 12 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 8. Package outline 0.85 0.75 0.65 0.58 1 1.65 1.25 1.55 1.15 2 0.34 0.26 Dimensions in mm 0.17 0.11 02-12-13 Fig 21. Package outline SOD523 (SC-79) 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package PESD5Z2.5 SOD523 PESD5Z3.3 SOD523 PESD5Z5.0 SOD523 PESD5Z6.0 SOD523 PESD5Z7.0 SOD523 PESD5Z12 SOD523 [1] Description 3000 8000 10000 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 For further information and the availability of packing methods, see Section 13. PESD5ZX_SER_2 Product data sheet Packing quantity © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 13 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 10. Soldering 2.15 0.50 0.60 1.20 solder lands solder paste 0.30 0.40 solder resist occupied area 1.80 1.90 mgs343 Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 22. Reflow soldering footprint SOD523 (SC-79) PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 14 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5ZX_SER_2 20080404 Product data sheet - PESD5ZX_SER_1 Modifications: PESD5ZX_SER_1 • Table 10: Type number updated to PESD5Z12 20070813 Product data sheet PESD5ZX_SER_2 Product data sheet - - © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 15 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PESD5ZX_SER_2 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 02 — 4 April 2008 16 of 17 PESD5Zx series NXP Semiconductors Low capacitance unidirectional ESD protection diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Packing information. . . . . . . . . . . . . . . . . . . . . 13 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 April 2008 Document identifier: PESD5ZX_SER_2