2SJ168W N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features unit : mm 2167A 2SJ168W N-Channel Silicon MOSFET 0.3 0.15 2.1 3 0.25 2 1 0.65 0.07 • Low ON-state resistance. Ultrahigh-speed switching. 1.8V drive. 0.25 • Package Dimensions 1.6 • 2.0 3 0.85 1 : Gate 2 : Source 3 : Drain Specifications 1 SOT-323 2 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±10 V 3 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation ID IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) V 12 A 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 20 VDS=10V, ID=1mA VDS=10V, ID=1.5A 0.4 Forward Transfer Admittance VGS(off) yfs ID=1.5A, VGS=4V ID=1A, VGS=2.5V 48 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 ID=0.5A, VGS=1.8V Gate-to-Source Leakage Current Cutoff Voltage Marking : KF 3.9 Unit max IDSS IGSS Zero-Gate Voltage Drain Current V(BR)DSS Conditions V 1 µA ±10 µA 1.3 V 63 mΩ 58 82 mΩ 72 110 mΩ 5.6 S Continued on next page. 1 2007-11-01 2SJ168W 2SJ168W Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 280 Output Capacitance 60 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit 13 ns Rise Time tr td(off) See specified Test Circuit 35 ns See specified Test Circuit 35 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit 25 ns VDS=10V, VGS=4V, ID=3A 8.8 nC nC Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A 0.85 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3A, VGS=0 0.82 0.85 nC 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1.5A RL=6.67Ω VIN D VOUT PW=10µs D.C.≤1% G 2SJ168W P.G 50Ω ID -- VDS V VDS=10V 3.5 2.0 1.5 1.0 25 0.5 0.5 0 °C --25°C 1.0 2.5 5°C VGS=1.0V 1.5 3.0 Ta= 7 Drain Current, ID -- A 2.0 ID -- VGS 4.0 1.5 2.5 1.8V 10.0V 4.0V 2.5 V 3.0 Drain Current, ID -- A S 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 0 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 160 0.2 IT03490 1.6 IT03491 RDS(on) -- Ta 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 140 120 100 1.0A 1.5A 80 ID=0.5A 60 40 20 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 120 100 80 60 40 20 0 --60 10 V =1.8 VGS , A 5 0. V I D= =2.5 , VGS A 0 . 4.0V I D=1 S= .5A, V G I D=1 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C IT03492 2 120 140 160 IT03493 2007-11-01 2SJ168W VDS=10V C 25° 5 °C -25 =- 3 2 C 75° Ta 1.0 7 5 3 1.0 7 5 3 2 0.1 7 5 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.2 5 7 10 IT03494 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT03495 Ciss, Coss, Crss -- VDS 1000 VDD=10V VGS=4V 2 0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 3 f=1MHz 7 5 100 7 tr td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 5°C 25° C --25 °C 7 Drain Current, ID -- A tf 3 2 td(on) 10 7 5 Ciss 3 2 100 7 Coss 5 Crss 3 3 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 10 IT03496 3 2 VDS=10V ID=3A 3.5 10 7 5 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 3 2 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 6 8 10 12 14 16 IDP=12A 20 IT03497 <10µs 1m s ID=3A 10 100µs m DC 10 s op 0m s er ati on 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V IT03498 18 ASO 0.01 0.01 10 PD -- Ta 1.2 4 1.0 7 5 3 2 0.5 0 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V VGS=0 3 10 0.1 0.01 Allowable Power Dissipation, PD -- W IF -- VSD 10 7 5 Ta= 7 2 yfs -- ID Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 2 3 5 7 IT03499 M 1.0 ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 90 0m m2 ✕ 0.4 0. 8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03500 3 2007-11-01 2SJ168W RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2007-11-01