HITACHI 2SK1837

2SK1836, 2SK1837
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-3PL
D
G
1
S
2
3
1. Gate
2. Drain (Flange)
3. Source
2SK1836, 2SK1837
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
K1836
Symbol
Ratings
Unit
VDSS
450
V
K1837
500
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
±30
V
50
A
200
A
50
A
Channel dissipation
Pch*
250
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1836, 2SK1837
Electrical Characteristics (Ta = 25°C)
Item
Drain to source
K1836
breakdown
voltage
K1837
Symbol
Min
Typ
Max
Unit
Test conditions
V(BR)DSS
450
—
—
V
I D = 10 mA, VGS = 0
500
—
—
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate
K1836
I DSS
—
—
250
µA
VDS = 360 V, VGS = 0
voltage drain
current
K1837
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to
K1836
RDS(on)
—
0.08
0.10
Ω
I D = 25 A
source on state
resistance
K1837
—
0.085
0.11
VGS= 10 V*1
Forward transfer admittance
|yfs|
22
35
—
S
I D = 25 A
VDS = 10 V*1
Input capacitance
Ciss
—
8150
—
pF
VDS = 10 V
Output capacitance
Coss
—
2100
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
180
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
80
—
ns
I D = 25 A
Rise time
tr
—
250
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
550
—
ns
RL = 1.2 Ω
Fall time
tf
—
220
—
ns
Body to drain diode forward
voltage
VDF
—
1.1
—
V
I F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
620
—
ns
I F = 50 A, VGS = 0,
diF / dt = 100 A / µs
Note
1. Pulse Test
3
2SK1836, 2SK1837
Maximum Safe Operation Area
Power vs. Temperature
1000
400
Operation in this area
is limited by R DS (on)
100
300
Drain Current I D (A)
Channel Dissipation
Pch (W)
300
200
PW
30
DC
10
Op
er
=
1m
10
ati
on
3
s
ms
0.3
(1
sh
ot)
(T
c=
25
°C
)
1
100
10
µ
0m s
s
10
K1836
Ta = 25°C
K1837
0
50
100
Case Temperature
150
Tc (°C)
0.1
1
200
8V
1000
V DS = 20 V
Pulse Test
6V
80
Drain Current I D (A)
Pulse Test
5.5 V
60
40
5V
20
4.5 V
60
40
20
Tc = 75°C
25°C
– 25°C
V GS = 4 V
4
8
12
16
Drain to Source Voltage V DS (V)
4
300
Typical Transfer Characteristics
80
0
100
100
10 V
Drain Current I D (A)
30
Drain to Source Voltage V DS (V)
Typical Output Characteristics
100
10
3
20
0
2
4
6
8
Gate to Source Voltage V GS (V)
10
2SK1836, 2SK1837
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1
5
Pulse Test
0.5
Pulse Test
4
Static Drain–Source on State
Resistance R DS (on) ( Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
50 A
3
2
20 A
I D = 10 A
1
0.2
V GS = 10, 15 V
0.1
0.05
0.02
0.01
0
8
4
12
5
20
16
10
20
Gate to Source Voltage V GS (V)
50
100
200
500
Drain Current I D (A)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
50
0.5
Pulse Test
0.3
I D = 50 A
0.2
20 A
0.1
0
–40
10 A
0
40
80
Case Temperature Tc (°C)
120
Forward Transfer Admittance
|y fs | (S)
Static Drain–Source on State
Resistance R DS (on) ( Ω)
Tc = – 25°C
20
0.4
5
2
1
160
25°C
75°C
10
0.5
0.5
V DS = 20 V
Pulse Test
1
2
5
10
20
50
Drain Current I D (A)
5
2SK1836, 2SK1837
Typical Capacitance
vs. Drain to Source Voltage
Body to Drain Diode Reverse
Recovry Time
10000
1000
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Ciss
200
100
50
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
Ciss
1000
100
10
0.5
10
1
2
10
5
20
50
0
Reverse Drain Current I DR (A)
Switching Characteristics
12
VDS
200
8
ID = 50 A
4
100 V
160
240
Gate Charge Q g (nc)
6
1000
td (off)
500
tf
200
tr
100
250 V
80
2000
Switching Time t (ns)
V GS
Gate to Source Voltage V GS (V)
Drain to Source Voltage V DS (V)
16
400 V
V DD = 400 V
50
.
V GS = 10 V,V DD =. 30 V
PW = 2 µs, duty 1 %
250 V
100
40
5000
V DD = 100 V
300
30
Drain to Source Voltage V DS (V)
20
400
20
10
Dynamic Input Characteristics
500
0
Crss
VGS = 0
f = 1 MHz
20
320
0
400
50
0.5
td (on)
1
2
5
10
Drain Current I D (A)
20
50
2SK1836, 2SK1837
Reverse Drain Current
vs. Source Drain Voltage
100
Reverse Drain Current I DR (A)
Pulse Test
80
60
40
20
V GS = 10 V
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
D=1
1
Tc = 25°C
0.5
0.3
0.2
0.1
0.1
0.05
θ ch – c(t) = γ s(t) . θ ch – c
θ ch – c = 0.5°C / W, Tc = 25°C
PW
D= T
P DM
0.02
0.03
0.01
T
PW
1 shot Pulse
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
7
2SK1836, 2SK1837
Switching Time Test Circuit
Waveforms
Vin Monitor
90 %
Vout Monitor
D.U.T
Vin
10 %
RL
Vout
Vin
10 V
50 Ω
.
V DD =. 30 V
90 %
td (on)
8
10 %
tr
10 %
90 %
td (off)
tf
5.0 ± 0.2
20.0 ± 0.3
φ3.3 ± 0.2
20.0 ± 0.6
2.5 ± 0.3
26.0 ± 0.3
6.0 ± 0.2
Unit: mm
1.4
3.0
2.2
1.2 +0.25
–0.1
5.45 ± 0.5
5.45 ± 0.5
0.6 +0.25
–0.1
2.8 ± 0.2
1.0
3.8
7.4
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3PL
—
—
9.9 g
2SK1836, 2SK1837
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.