HAT1041T Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-1238F (Z) 7th. Edition Jan. 2001 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP-8 87 65 12 34 1 5 8 D D D 4 G S S S S 2 3 6 7 1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate HAT1041T Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS -20 V Gate to source voltage VGSS ±12 V Drain current ID -6.0 A -48 A -6.0 A 1.3 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤10s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -20 — — V I D = -10mA, VGS = 0 Gate to source leak current I GSS — — ±0.1 µA VGS = ±12V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = -20 V, VGS = 0 Gate to source cutoff voltage VGS(off) -0.4 — -1.4 V VDS = -10V, I D = -1mA Static drain to source on state RDS(on) — 0.020 0.026 Ω I D =- 3A, VGS =- 4.5V Note3 resistance RDS(on) — 0.035 0.045 Ω I D = -3A, VGS = -2.5V Note3 Forward transfer admittance |yfs| 6.5 11 — S I D = -3A, VDS = -10V Note3 Input capacitance Ciss — 1850 — pF VDS = -10V Output capacitance Coss — 590 — pF VGS = 0 Reverse transfer capacitance Crss — 380 — pF f = 1MHz Turn-on delay time t d(on) — 30 — ns VGS =- 4V, ID = -3A Rise time tr — 145 — ns VDD ≅ -10V Turn-off delay time t d(off) — 210 — ns Fall time tf — 170 — ns Body–drain diode forward voltage VDF — -0.85 -1.10 V IF =-6.0A, VGS = 0 Note3 Body–drain diode reverse recovery time t rr — 70 — ns IF = -6.0A, VGS = 0 diF/ dt =20A/µs Note: 2 3. Pulse test HAT1041T Main Characteristics Typical Output Characteristics -20 Pulse Test (A) -10 V -4 V -16 Drain Current ID -3 V -12 -8 VGS = -1.5 V -4 0 -2 -4 -6 Drain to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test 0.1 0.05 -2.5 V 0.02 VGS = -4.5 V 0.01 0.005 0.002 -0.2 -0.5 -1 -2 Drain Current -5 -10 I D (A) -20 V DS = -10 V Pulse Test -16 -12 -8 Tc = -25°C -4 0 -8 -10 V DS (V) Static Drain to Source on State Resistance R DS(on) ( Ω) Drain Current I D (A) -2V Drain to Source On State Resistance R DS(on) ( Ω ) Typical Transfer Characteristics -20 25°C 75°C -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 0.06 0.04 I D = -5 A -2.5 V -5 A 0.02 V GS = -4.5 V 0 -40 -2 A, -1 A -2 A, -1 A 0 40 80 120 160 Case Temperature Tc (°C) 3 HAT1041T Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 θ ch - f(t) = γs (t) • θ ch - f θ ch - f = 139 °C/W, Ta = 25 °C When using the glass epoxy board (FR4 40x40x1.6 mm) 0.02 0.01 PDM e 0.001 t ho 1s ls pu D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 Pulse Width PW (s) 4 10 100 1000 10000 HAT1041T Package Dimensions As of January, 2001 Unit: mm 4.40 3.00 3.30 Max 8 5 1 4 0.65 0.20 ± 0.06 1.0 0.13 M 6.40 ± 0.20 0.10 *Dimension including the plating thickness Base material dimension *0.17 ± 0.05 0.15 ± 0.04 1.10 Max 0.805 Max 0.07 +0.03 –0.04 *0.22 +0.08 –0.07 0° – 8° 0.50 ± 0.10 Hitachi Code JEDEC EIAJ Mass (reference value) TTP-8D — — — 5 HAT1041T Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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