JDSU PL-DD0-00-S30-C0

Communications componentS
850 nm 2.5 G GaAs PIN Die
PL-DD0-00-S30-C0
Key Features
•Topside connections for both contacts
•Large topside detection area
•Anti-reflective coating for 850 nm
•Monolithic insulating mounting surface
•Data rates from 622 Mbps to 2.5 Gbps
•Custom physical configuration and performance specification tolerances are available
Benefits
•Large active area provides improved alignment tolerances and ease of barrel attachment
•Small die dimensions allow flexible assembly options
NORTH AMERICA: 800 498-JDSU (5378)
The JDSU single die 850 nm 2.5 Gbps GaAs PIN is designed for high-speed optical data communication applications. The topside illuminated device has a large
optical detection area, Ø=120 mm, for increased process tolerance during assembly.
The backside mounting surface is electrically isolated from the device electrodes for
simplified assembly. The PIN is designed for datacom applications using 850 nm
multi-mode 50/125 mm or 62.5/125 mm fiber.
worldwide: +800 5378-JDSU
WEBSITE: www.jdsu.com
850 nm 2.5 G GaAs PIN Die
Mounting Dimensions
0.310
0.203 ±0.013
0.155
4X 0.031
0.005
1
+0.010
- 0.000
0.209
0.005
0.089
+0.010
- 0.000
0.089
0.336
0.119
0.089
0.005
0.005
+0.010
- 0.000
+0.010
- 0.000
Note
1Device Anode
2Device Cathode
2
Dimensions are in mm
Shipping Information
Shipped in anti-static 2” x 2” gel pack containers. 1000 per gel pack.
Absolute Maximum Ratings
Parameter
(Tcase = 30 °C, Continuous Wave (CW) operation unless otherwise stated.)
Symbol
Storage temperature
Tst
Forward current
If
Reverse voltage
BVRPD
Reverse current
IR
ESD1
Ratings
Unit
-40 to +125 5
-40 1
Class 1
°C
mA
V
mA
Note:
Conditions exceeding those listed may cause permanent damage to the device. Devices subjected to conditions beyond the limits specified for extended periods of time may
adversely affect reliability.
1. HBM
850 nm 2.5 G GaAs PIN Die
Electro-optical Characteristics
Parameter
(Tcase = 30 °C, CW operation unless otherwise stated.)
Symbol
Test Condition
Min.
Typ.
Max.
PIN Diode
Detection wavelength
lp
850
Operating temperature
Top
-40
85
Detection aperture
D
120
Responsivity
R
VR = 1.6 V
0.55
0.6
l = 850 nm
Dark current
ID
VR = 1.6 V
0.1
1.0
Breakdown voltage
VB
40
Capacitance
C
VR = 2.0 V
0.6
0.75
0.8
f = 1 MHz
Rise/Fall time1
tr
20% - 80%
100
tf
20% - 80%
3
Bandwidth
BW
VR = 2.0 V
Unit
nm
°C
mm
A/W
nA
V
pF
psec
GHz
1. Packaging, coupling, electronics and optical measurement hardware affect rise/fall time measurement.
Order Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
[email protected].
Sample: PL-DD0-00-S30-C0
Part Number
PL-DD0-00-S30-C0
Description
850 nm 2.5 G GaAs PIN die
NORTH AMERICA: 800 498-JDSU (5378)
worldwide: +800 5378-JDSU
WEBSITE: www.jdsu.com
Product specifications and descriptions in this document subject to change without notice. © 2008 JDS Uniphase Corporation 30149324 000 0408 PL-DD0-00-S30-C0.DS.CC.AE
April 2008