DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A) • Low Ciss Ciss = 2850 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK2984 TO-220AB 2SK2984-S TO-262 2SK2984-ZJ TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Note1 VDSS 30 V VGSS ±20 V ID(DC) ±40 A ID(pulse) ±160 A Total Power Dissipation (TA = 25°C) PT 1.5 W Total Power Dissipation (Tc = 25°C) PT 60 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Gate to Source Voltage Note2 Drain Current (DC) Drain Current (pulse) Note3 Notes.1 VGS = 0 V 2 VDS = 0 V 3 PW ≤ 10 µ s, Duty Cycle ≤ 1 % . The information in this document is subject to change without notice. Document No. D12356EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan © 1998 2SK2984 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 20 A 6.5 10 mΩ RDS(on)2 VGS = 4.5 V, ID = 20 A 8.5 13 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 20 A 18 36 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 2600 pF Output Capacitance Coss VGS = 0 V 1150 pF 500 pF 70 ns 1100 ns 210 ns 310 ns Gate to Source Cut-off Voltage Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time f = 1 MHz ID = 20 A VGS(on) = 10 V tr Turn-off Delay Time VDD = 15 V td(off) Fall Time RG = 10 Ω tf Total Gate Charge Gate to Source Charge Gate to Drain Charge QG ID = 40 A 65 nC QGS VDD = 24 V 9.5 nC 12.5 nC VGS = 10 V QGD Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VF(S-D) IF = 40 A, VGS = 0 V 0.8 V trr IF = 40 A, VGS = 0 V 50 ns Qrr di/dt = 100 A /µS 100 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff 2SK2984 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 20 40 60 80 60 50 40 30 20 10 0 100 120 140 160 TC - Case Temperature - ˚C 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 1000 Pulsed ID(pulse) d ite ) Lim 10 V n) = (o S DS R VG t (a 100 1 m ID(DC) s 10 10 0 Po m s m s we rD 10 ID - Drain Current - A ID - Drain Current - A 125 DC iss ipa tio n 100 VGS =10 V VGS = 4.5 V 75 50 Lim ite d TC = 25˚C Single Pulse 1 0.1 1 10 100 VDS - Drain to Source Voltage - V 0 0.5 1.0 1.5 2.0 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed Tch = -25˚C 25˚C 100 125˚C 10 1 VDS = 10 V 0 2 4 6 8 VGS - Gate to Source Voltage - V 3 2SK2984 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 83.3 ˚C/W 100 10 Rth(ch-c) = 2.08 ˚C/W 1 0.1 0.01 0.001 Single Pulse TC = 25˚C 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 | yfs | - Forward Transfer Admittance - S 1000 VDS = 10 V Pulsed 100 Tch = -25˚C 25˚C 75˚C 125˚C 10 1 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed 20 VGS = 4.5 V 10 VGS =10 V 0 1 10 ID - Drain Current - A 4 100 VGS(off) - Gate to Source Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 10 ID = 20 A 0 10 5 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 - 50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 15 VGS = 4.5 V 10 Pulsed 100 ISD - Diode Forward Current - A VGS = 10 V 5 VGS = 0 V 10 1 0.1 ID = 20 A 0 - 50 0 50 100 150 0 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 1000 Coss Crss 100 10 0.1 1 10 100 tr 100 10 10 IF - Diode Current - A 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 1 td(on) 100 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 tf td(off) VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 40 A 14 30 20 VGS 12 10 VDD = 24 V 15 V 6V 8 6 4 10 2 VDS 0 20 40 60 80 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK2984 0 QG - Gate Charge - nC 5 2SK2984 PACKAGE DRAWINGS (Unit : mm) 4.8 MAX. φ 3.6±0.2 (10) 1.3±0.2 10.0 4.8 MAX. 1.3±0.2 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 12.7 MIN. 4 15.5 MAX. 5.9 MIN. 4 8.5±0.2 3.0±0.3 10.6 MAX. 2)TO-262 (TO-220 Fin Cut:MP-25S) 1.0±0.5 1)TO-220AB (MP-25) 2.8±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (JEDEC TYPE:MP-25ZJ) 4.8 MAX. (10) 1.3±0.2 EQUIVALENT CIRCUIT 5.7±0.4 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Remark Drain 8.5±0.2 1.0±0.5 4 ) .5R (0 Body Diode Gate ) .8R (0 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 2SK2984 [MEMO] 7 2SK2984 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Anti-radioactive design is not implemented in this product. M4 96. 5