PMV213SN µTrenchMOS™ standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23. 1.2 Features ■ Low on-state resistance in a small surface mount package. 1.3 Applications ■ DC-to-DC primary side switching. 1.4 Quick reference data ■ VDS ≤ 100 V ■ Ptot ≤ 2 W ■ ID ≤ 1.9 A ■ RDSon ≤ 250 mΩ 2. Pinning information Table 1: Pinning - SOT23 simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol d 3 g 1 2 MBB076 Top view SOT23 MSB003 s PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 100 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage (DC) ID drain current (DC) - ±30 V Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 - 1.9 A Tsp = 100 °C; VGS = 10 V; Figure 2 - 1.2 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 7.6 A Tsp = 25 °C; Figure 1 Ptot total power dissipation - 2 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 1.7 A ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 6.9 A © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data Rev. 02 — 19 February 2003 2 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 Tsp (°C) P tot P der = ----------------------- × 100% P ° 200 Tsp (°C) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 03aj44 10 tp = 10 µ s ID (A) 100 µ s 1 1 ms Limit RDSon = VDS/ID 10-1 10 ms DC 100 ms 10-2 10-3 1 102 10 VDS (V) 103 Tsp = 25 °C; IDM is single pulse; VGS = 10V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data Rev. 02 — 19 February 2003 3 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit thermal resistance from junction to solder point Figure 4 Rth(j-sp) - - 60 K/W 4.1 Transient thermal impedance 03aj43 102 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 δ= P tp T 0.02 single pulse t tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data Rev. 02 — 19 February 2003 4 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 100 - - V Tj = −55 °C 90 - - V 2 3 4 V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C IDSS drain-source leakage current Tj = 150 °C 1.2 - - V Tj = −55 °C - - 4.4 V - - 1 µA VDS = 100 V; VGS = 0 V Tj = 25 °C Tj = 150 °C - - 100 µA - 10 100 nA Tj = 25 °C - 213 250 mΩ Tj = 150 °C - 490 575 mΩ - 7 - nC - 1.4 - nC IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 0.5 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss ID = 1.2 A; VDD = 80 V; VGS = 10 V; Figure 13 - 2.5 - nC - 330 - pF output capacitance - 36 - pF Crss reverse transfer capacitance - 22 - pF td(on) turn-on delay time - 5.5 - ns tr rise time - 5 - ns td(off) turn-off delay time - 9.5 - ns tf fall time - 3 - ns - 0.83 1.2 V - 36 - ns - 23 - nC VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11 VDD = 50 V; RL = 33 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 1.5 A; VGS = 0 V; Figure 12 trr reverse recovery time Qr recovered charge IS = 1.2 A; dIS/dt = −100 A/µs; VGS = 0 V © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data Rev. 02 — 19 February 2003 5 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 03aj45 6 ID (A) VDS > ID x RDSon ID (A) 5.4 V 5.2 V 4 03aj47 6 10 V 6 V 4 5V 4.8 V 2 2 4.6 V 4.4 V 25 °C Tj = 150 °C VGS = 4.2 V 0 0 0 0.5 1 1.5 VDS (V) 0 2 Tj = 25 °C VGS (V) 6 Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aj46 400 Tj = 25 °C 4 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. RDSon (mΩ) 2 VGS = 5 V 5.2 V 03aa29 3 5.4 V a 300 6V 2 10 V 200 1 100 0 0 0 2 4 ID (A) 6 Tj = 25 °C -60 60 120 T (°C) 180 j R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data 0 Rev. 02 — 19 February 2003 6 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 03aa32 5 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 03aa35 10-1 0 60 120 Tj (°C) 180 min 0 2 typ max 4 VGS (V) 6 Tj = 25 °C ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03aj49 103 C (pF) Ciss 102 Coss Crss 10 1 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data Rev. 02 — 19 February 2003 7 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 03aj48 6 03aj50 10 ID = 1.2 A VGS (V) VGS = 0 V IS (A) VDD = 20 V Tj = 25 °C 8 4 6 80 V 50 V 4 2 150 °C Tj = 25 °C 2 0 0 0 0.3 0.6 0.9 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V 0 4 6 QG (nC) 8 ID = 1.2 A; VDD = 20 V, 50 V, 80 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data 2 Rev. 02 — 19 February 2003 8 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 6. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Fig 14. SOT23. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data Rev. 02 — 19 February 2003 9 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 7. Revision history Table 5: Revision history Rev Date 02 20030219 CPCN Description - Product data (9397 750 11128) Modifications: • • • • • • 01 20030115 - Section 1.4 “Quick reference data” ID modified due to improved Rth. Section 1.4 “Quick reference data” Ptot modified due to improved Rth. Section 3 “Limiting values” ID, IDM, Ptot, IS, ISM modified due to improved Rth. Section 3 “Limiting values” Figure 3 SOA graph modified due to improved Rth. Section 4 “Thermal characteristics” Rth(j-sp) improved. Section 4 “Thermal characteristics” Figure 4 to reflect the improvement in Rth(j-sp). Product data (9397 750 10893) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Product data Rev. 02 — 19 February 2003 10 of 12 PMV213SN Philips Semiconductors µTrenchMOS™ standard level FET 8. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 11. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 10. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 11128 Rev. 02 — 19 February 2003 11 of 12 Philips Semiconductors PMV213SN µTrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 19 February 2003 Document order number: 9397 750 11128