STANLEY PS3072

PS3072
Through-hole Phototransistor/φ3 Type
Features
φ3 type, Water clear epoxy
Package
Product features
・Photo Current : 0.7mA TYP. (VCE=5V,Ee=1mW/cm2)
・Wide Distribution
・Lead–free soldering compatible
・RoHS compliant
Peak Sensitivity Wavelength
880nm
Half Intensity Angle
120 deg.
Die materials
Si
Soldering methods
TTW (Through The Wave) soldering and manual soldering
※Please refer to Soldering Conditions about soldering.
ESD
2kV (HBM)
Packing
Bulk : 200pcs(MIN.)
Recommended Applications
Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications
2006.8.31
Page 1
PS3072
Through-hole Phototransistor/φ3 Type
Absolute Maximum Ratings
(Ta=25℃)
Item
Symbol
Absolute Maximum Ratings
Unit
Collector Dissipation
Pc
75
mW
Collector-Emitter Voltage
VCEO
30
V
Emitter-Collector Voltage
VECO
5
V
Collector Current
Ic
30
mA
Operating Temperature
Topr
-30~+85
℃
Storage Temperature
Tstg
-30~+100
℃
Electro-Optical Characteristics
Item
Photo Current
(Ta=25℃)
Conditions
VCE=5V,
2 ※1
Ee=1mW/cm
VCE =10V, Ic=2mA,
Symbol
Ic
Characteristics
Unit
Min.
0.2
mA
TYP.
0.7
mA
RL=100Ω ※ 1
tr/tf
TYP.
5
μs
Dark Current
VCEO=10V
ICEO
Max.
0.2
μA
Peak Sensitivity Wavelength
VCE=5V
λp
TYP.
880
nm
Spatial Half Width
VCE=5V
⊿θ
TYP.
120
deg.
Response Time
※1 Color temperature is 2,856K. Employs a standard tungsten lamp.
2004.11.17
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PS3072
Through-hole Phototransistor/φ3 Type
Photo Current Rank
(Ta=25℃)
Ic(mA)
Rank
Condition
MIN.
MAX.
A
0.20
0.40
B
0.35
0.70
C
0.6
1.2
D
1.0
2.1
E
1.8
-
VCE = 5V
Ee = 1mW/cm2
※Please contact our sales staff concerning rank designation.
2004.11.17
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PS3072
Through-hole Phototransistor/φ3 Type
Technical Data
Relative Sensitivity vs. Sensitivity Wavelength
Spatial Distribution Example
Condition : Ta = 25℃, VCE = 5V
Relative Sensitivity
Condition : Ta = 25℃
Sensitivity Wavelength [nm]
Radiation Luminance vs. Relative Photo Current
Collector-Emitter Voltage vs. Photo Current
Radiation Luminance Ee(mW/cm2)
It is based on Ee=1mW/cm2.
Employs a standard tungsten lamp of 2,856K.
2004.11.17
Condition : Ta = 25℃
Photo Current Ic (mA)
Relative Photo Current Ic
Condition : Ta = 25℃, VCE = 5V
Collector-Emitter Voltage VCE(V)
Employs a standard tungsten lamp of 2,856K.
Page 4
PS3072
Through-hole Phototransistor/φ3 Type
Technical Data
Response Time Measuring Circuit
Ambient Temperature vs. Relative Photo Current
Response Time (μs)
Condition : VCE=10V, Ic=2mA, Ta=25℃
Load Resistance : RL(Ω)
Ambient Temperature vs. Collector Dissipation
Ambient Temperature vs. Dark Current
Dark Current : ICEO(A)
Collector Dissipation : Pc(mW)
Condition : VCEO = 10V
Ambient Temperature : Ta(℃)
2005.3.31
Ambient Temperature : Ta(℃)
Page 5
PS3072
Through-hole Phototransistor/φ3 Type
Technical Data
Ambient Temperature vs. Relative Photo Current
Relative Photo Current Ic (mA)
Condition : VCE = 5V
Ambient Temperature : Ta(℃)
2004.11.17
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PS3072
Through-hole Phototransistor/φ3 Type
Package Dimensions
2006.8.31
(Unit: mm)
Page 7
PS3072
Through-hole Phototransistor/φ3 Type
TTW (Through The Wave) soldering Conditions
Pre-heating
100 ℃
(MAX.) Resin surface temperature
Solder Bath Temp.
265 ℃
(MAX.)
Dipping Time
Position
5 s
(MAX.)
At least 3.0 mm away from the root of lead
1) The dip soldering process shall be twice maximum.
2) The product shall be cooled to normal temperature before the second dipping process.
※The detail is described to LED and Photodetector handling precautions of home page:
"Mounting through-hole Type Devices“ and "Soldering", and use it after the confirmation, please.
Manual Soldering Conditions
Iron tip temp.
Soldering time and frequency
Position
400 ℃
3 s
1 time
(MAX.) (30 W Max.)
(MAX.)
(MAX.)
At least 3.0 mm away from the root of lead
※The detail is described to LED and Photodetector handling precautions of home page:
"Mounting through-hole Type Devices“ and "Soldering", and use it after the confirmation, please.
2007.8.31
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PS3072
Through-hole Phototransistor/φ3 Type
Reliability Testing Result
Reliability Testing
Result
Applicable Standard
Room Temp.
Operating Life
Resistance to
Soldering Heat
EIAJ ED4701/100(101)
EIAJ ED4701/300(302)
Temperature Cycling
EIAJ ED4701/100(105)
Wet High Temp.
Storage Life
High Temp.
Storage Life
EIAJ ED4701/100(103)
EIAJ ED4701/200(201)
Low Temp.
Storage Life
EIAJ ED4701/200(202)
EIAJ ED4701/400(401)
Lead Tension
Vibration,
Variable Frequency
EIAJ ED4701/400(403)
Testing Conditions
Duration
Ta = 25℃, Pc = Maxium Rated Power Dissipation
Failure
1,000 h
0/16
5s
0/16
Minimum Rated Storage Temperature(30min)
~Normal Temperature(15min)
~Maximum Rated Storage Temperature(30min)
~Normal Temperature(15min)
5 cycles
0/16
Ta = 60±2℃, RH = 90±5%
1,000 h
0/16
Ta = Maximum Rated Storage Temperature
1,000 h
0/16
Ta = Minimum Rated Storage Temperature
1,000 h
0/16
10N,1time (□0.4 and Flat Package : 5N)
10s
0/16
2h
0/16
265±5℃, 3mm from package base
2
98.1m/s (10G), 100 ~ 2KHz sweep for 20min.,
XYZ each direction
Failure Criteria
Items
Symbols
Conditions
Failure criteria
Photo Current
IC
EE Value of each product
Irradiance of Photo Current
VCE Value of each product
Collector-emitter Voltage of
Photo Current
Testing Max. Value ≧Initial Value x 1.3
Testing Min. Value ≦ Initial Value x 0.7
Dark Current
ICEO
VCEO Value of each product
Collector-emitter Voltage of Dark
Current
Testing Max. Value ≧ Spec. Max. Value x 1.2
Cosmetic Appearance
-
-
Occurrence of notable decoloration,
deformation and cracking
2007.8.31
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PS3072
Through-hole Phototransistor/φ3 Type
Special Notice to Customers Using the Products and
Technical Information Shown in This Data Sheet
1) The technical information shown in the data sheets are limited to the typical characteristics and circuit
examples of the referenced products. It does not constitute the warranting of industrial property nor the
granting of any license.
2) For the purpose of product improvement, the specifications, characteristics and technical data described in
the data sheets are subject to change without prior notice. Therefore it is recommended that the most
updated specifications be used in your design.
3) When using the products described in the data sheets, please adhere to the maximum ratings for operating
voltage, heat dissipation characteristics, and other precautions for use. We are not responsible for any
damage which may occur if these specifications are exceeded.
4) The products that have been described to this catalog are manufactured so that they will be used for the
electrical instrument of the benchmark (OA equipment, telecommunications equipment, AV machine, home
appliance and measuring instrument).
The application of aircrafts, space borne application, transportation equipment, medical equipment and
nuclear power control equipment, etc. needs a high reliability and safety, and the breakdown and the wrong
operation might influence the life or the human body. Please consult us beforehand if you plan to use our
product for the usages of aircrafts, space borne application, transportation equipment, medical equipment
and nuclear power control equipment, etc. except OA equipment, telecommunications equipment, AV
machine, home appliance and measuring instrument.
5) In order to export the products or technologies described in this data sheet which are under the
“Foreign Exchange and Foreign Trade Control Law,” it is necessary to first obtain an export permit from the
Japanese government.
6) No part of this data sheet may be reprinted or reproduced without prior written permission from Stanley
Electric Co., Ltd.
7) The most updated edition of this data sheet can be obtained from the address below:
http://www.stanley-components.com
2007.8.31
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