PT-F
MINIBRIDGE
8 AMPERES-TAB TERMINALS
T
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La tio
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to de
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c. o m
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nt
SINGLE-PHASE FULL-WAVE BRIDGES
HEAT SINK AND CHASSIS MOUNTING
PT-F SERIES
PRV/Leg
50V
100V
200V
400V
600V
800V
1000V
Type No.
PT05F
PT 10F
PT 20F
PT 40F
PT 60F
PT 80F
PT100F
ELECTRICAL CHARACTERISTICS PER LEG
(at TA =25 C Unl es s Oth erw ise Spe ci fie d)
Max.Forward Voltage Drop, V F =1.0 V @ I F =
o
Max. DC Reverse Current @ PRV and 25 C, I R
o
Max. DC Reverse Current @ PRV and 100 C, I R
Max. Peak Surge Current, IFSM (8.3 ms)
Storage Temperature Range, TSTG
Thermal Resistance (Total Bridge), R0- j-c
2.0
Amp
3
A
75
A
150
Amp
o
-55 to +150
6.0typ.
C
o
C/ W
EDI reserves the right to change these specifications at any time without notice.
PT-F
Figure 1
PT-F SERIES CURRENT DERATING
IF(AV) . AVERAGE FORWARD CURRENT (AMP)
8
FULL WAVE OUTPUT
RES IND LOADS
7
6
5
4
3
CAPACITIVE
LOADS
2
I (PK)
I (AV)
1
{
5
= 10
20
NOTE: I(PK) / I ( AV ) ratio
refers to a single diode (leg)
0
40 50
60
70
80
90 100
110 120 130 140 150 160
T C CASE TEMPERATURE (O C)
PT(AV). TOTAL AVERAGE POWER DISSIPATION (WATTS)
Figure 2
NON-REPETITIVE SURGE CURRENT
300
200
. PEAK SURGE CURRENT (AMP)
150
100
70
50
30
IFSM
20
1
3
2
4
6
8 10
20
30 40
60 80 100
Figure 3
POWER DISSIPATION
24
20
16
12
8
BRIDGE OUTPUT
RES IND LOADS
4
0
0
NUMBER OF CYCLES(60 Hz)
2
4
6
8
10
12
IF(AV). AVERAGE FORWARD CURRENT (AMP)
PT-F SERIES MECH. OUTLINE
B
D
LTR
G
AC
_
+
AC
E
F
INCHES
MILLIMETERS
B
C
.140-.160DIA
.800 MAX
3.5 - 4.1 DIA
D
.032
.500 MAX
.300 MAX
.81
E
F
G
.250
20.4 MAX
12.7 MAX
7.62 MAX
6.35
C
NOTE: 1. A thin film of silicone thermal compound is recommended between the bridge
case and mounting surface for improved thermal conduction.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE
* YONKERS. NEW YORK 10710 914-965-4400
Ee-mail:[email protected] * Wwebsite:http:// www.edidiodes.com
* FAX 914-965-5531
* 1-800-678-0828