PZTA92T1G High Voltage Transistor PNP Silicon Features • Complement to PZTA42T1G • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −300 Vdc Collector−Base Voltage VCBO −300 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500 mAdc Total Power Dissipation up to @ TA = 25°C (Note 1) PD Storage Temperature Range Tstg −65 to +150 °C Junction Temperature TJ 150 °C http://onsemi.com SOT−223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 W 1.5 EMITTER 3 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. 1 Characteristic Symbol RqJA Max 3 SOT−223 CASE 318E STYLE 1 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient (Note 2) 2 Unit MARKING DIAGRAM °C/W 83.3 2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. AYW P2DG G 1 P2D A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device PZTA92T1G Package Shipping† SOT−223 (Pb−Free) 1,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 9 1 Publication Order Number: PZTA92T1/D PZTA92T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristics Min Max −300 − −300 − −5.0 − − −0.25 − −0.1 25 40 40 − − − − − −0.5 −0.9 − 6.0 50 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO Collector-Base Cutoff Current (VCB = −200 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VBE = −3.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −30 mAdc, VCE = −10 Vdc) hFE Saturation Voltages (IC = −20 mAdc, IB = −2.0 mAdc) (IC = −20 mAdc, IB = −2.0 mAdc) − Vdc VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Collector−Base Capacitance @ f = 1.0 MHz (VCB = −20 Vdc, IE = 0) Ccb Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = − 20 Vdc, f = 100 MHz) pF fT MHz 3. Pulse Test Conditions, tp = 300 ms, d 0.02. 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 100 PZTA92T1G f, T CURRENT-GAIN — BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1000 3 1 Figure 2. Capacitance 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages 1 IC, COLLECTOR CURRENT (A) V, VOLTAGE (V) 1.2 10 ms 0.1 1.0 s 0.01 0.001 1 100 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 3 1000 PZTA92T1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE DIM A A1 b b1 c D E e e1 L L1 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° q L STYLE 1: PIN 1. 2. 3. 4. L1 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 mm Ǔ ǒinches 1.5 SCALE 6:1 0.059 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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