NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 67, BCW 68 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BCW 65 A BCW 65 B BCW 65 C BCW 66 F BCW 66 G BCW 66 H EAs EBs ECs EFs EGs EHs Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632 B SOT-23 1) E C For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 65 BCW 66 Maximum Ratings Parameter Symbol Values BCW 66 BCW 65 Unit Collector-emitter voltage VCE0 32 45 Collector-base voltage VCB0 60 75 Emitter-base voltage VEB0 5 5 Collector current IC 800 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA A mA – 65 … + 150 Thermal Resistance Junction - ambient1) Rth JA ≤ 285 Junction - soldering point Rth JS ≤ 215 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA BCW 65 BCW 66 V(BR)CB0 Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C ICB0 BCW 65 BCW 66 BCW 65 BCW 66 Emitter-base cutoff current, VEB = 4 V IEB0 DC current gain1) IC = 100 µA, VCE = 10 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 10 mA, VCE = 1 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 100 mA, VCE = 1 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H IC = 500 mA, VCE = 2 V BCW 65 A, BCW 66 F BCW 65 B, BCW 66 G BCW 65 C, BCW 66 H hFE 1) Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 3 V 32 45 – – – – 60 75 – – – – 5 – – – – – – – – – – 20 20 20 20 nA nA µA µA – – 20 nA – 35 50 80 – – – – – – 75 110 180 – – – – – – 100 160 250 160 250 350 250 400 630 35 60 100 – – – – – – BCW 65 BCW 66 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat Base-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat V – – – – 0.3 0.7 – – – – 1.25 2 AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 170 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 6 – pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – 60 – 1) Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 4 BCW 65 BCW 66 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB = VCEmax Semiconductor Group 5 BCW 65 BCW 66 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 6