TLE 4264 G TLE 4264 G 5-V Low-Drop Fixed-Voltage Regulator Features ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low current consumption Overtemperature protection Short-circuit proof Suitable for use in automotive electronics Reverse polarity P-SOT223-4-1 Type Ordering Code Package TLE 4264 G Q67006-A9139 P-SOT223-4-1 (SMD) Functional Description TLE 4264 G is a 5-V low-drop fixed-voltage regulator in an SOT-223 package. The IC regulates an input voltage VI in the range 5.5 V < VI < 45 V to VQrated = 5.0 V. The maximum output current is more than 120 mA. This IC is shortcircuit-proof and features temperature protection that disables the circuit at overtemperature. Dimensioning Information on External Components The input capacitor Ci is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with Ci, the oscillating of input inductivity and input capacitance can be clamped. The output capacitor CQ is necessary for the stability of the regulating circuit. Stability is guaranteed at values CQ ≥ 10 µF and an ESR ≤ 10 Ω within the operating temperature range. Semiconductor Group 1 1998-11-01 TLE 4264 G Pin Configuration (top view) 4 1 2 3 VΙ GND VQ AEP01526 Pin Definitions and Functions Pin Symbol Function 1 VI Input voltage; block to ground directly on IC with ceramic capacitor 2, 4 GND Ground 3 VQ 5-V output voltage; block to ground with ≥ 10-µF capacitor, ESR < 10 Ω Circuit Description The control amplifier compares a reference voltage, which is kept highly precise by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control, working as a function of load current, prevents any over-saturation of the power element. The IC is additionally protected against overload, overtemperature and reverse polarity. Semiconductor Group 2 1998-11-01 TLE 4264 G Saturation Control and Protection Circuit Temperature Sensor Input 1 3 Control Amplifier Adjustment Output Buffer Bandgap Reference 2,4 GND AEB01527 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4264 G Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. max. Unit Notes Input Input voltage VI – 42 45 V – Input current II – – – limited internally Output voltage VQ –1 16 V – Output current IQ – – – limited internally IGND 50 – mA – Junction temperature Tj – 150 °C – Storage temperature Tstg – 50 150 °C – Input voltage VI 5.5 45 V – Junction temperature Tj – 40 150 °C – System-air Rth SA – 100 K/W soldered in System-case Rth SC – 25 K/W – Output Ground Current Temperatures Operating Range Thermal Resistances Semiconductor Group 4 1998-11-01 TLE 4264 G Characteristics VI = 13.5 V; – 40 °C ≤ Tj ≤ 125 °C, unless specified otherwise Parameter Symbol Limit Values min. typ. max. Unit Test Conditions Output voltage VQ 4.9 5.0 5.1 V 5 mA ≤ IQ ≤ 100 mA 6 V ≤ VI ≤ 28 V Output-current limiting IQ 120 150 – mA – Current consumption Iq = II – IQ Iq – – 400 µA IQ = 1 mA Current consumption Iq = II – IQ Iq – 10 15 mA IQ = 100 mA Drop voltage Vdr – 0.25 0.5 V IQ = 100 mA1) Load regulation ∆VQ – – 40 mV IQ = 5 to 100 mA VI = 6 V Supply-voltage regulation ∆VQ – 15 30 mV VI = 6 to 28 V IQ = 5 mA Supply voltage suppression SVR – 54 – dB fr = 100 Hz Vr = 0.5 Vpp 1) Drop voltage = VI – VQ (measured where VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V) Semiconductor Group 5 1998-11-01 TLE 4264 G 1 Input 5.5 to 45 V Ci 3 TLE 4264G Output 10 µF 2,4 AES01528 Application Circuit Semiconductor Group 6 1998-11-01 TLE 4264 G Drop Voltage VDr versus Output Current IQ V Dr Current Consumption Iq versus Input Voltage Vi 800 mV 700 AED01979 15 Ι q mA 600 10 500 R L = 50 Ω Tj = 125 C 400 300 5 200 R L = 100 Ω Tj = 25 C 100 0 25 50 75 100 125 mA 0 175 0 10 20 30 40 V 50 ΙQ Vi Current Consumption Iq versus Output Current IQ Current Consumption Iq versus Output Current IQ AED01980 12 AED01981 3.0 Ι q mA Ι q mA 10 2.5 8 2.0 Vi = 13.5 V 6 1.5 4 1.0 Vi = 13.5 V 2 0 0.5 0 50 100 mA 0 150 ΙQ Semiconductor Group 7 0 5 10 15 20 30 mA ΙQ 1998-11-01 TLE 4264 G Output Voltage VQ versus Temperature Tj Output Current IQ versus Input Voltage Vi AED01982 5.20 VQ AED01983 200 Ι Q mA V 5.10 Vi = 13.5 V 150 5.00 Tj = 25 C 4.90 100 Tj = 125 C 4.80 50 4.70 4.60 -40 0 40 80 0 120 C 160 Tj 0 10 20 30 40 V 50 Vi Output Voltage VQ versus Input Voltage Vi AED01984 6 VQ R L = 50 Ω V 5 4 3 2 1 0 0 2 4 6 8 V 10 Vi Semiconductor Group 8 1998-11-01 TLE 4264 G Package Outlines P-SOT223-4-1 (Plastic Small Outline Transistor) 1.6 ±0.1 6.5 ±0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3.5 ±0.2 4 0.5 min B 7 ±0.3 3 ±0.1 15˚max A 3 0.28 ±0.04 2.3 0.7 ±0.1 4.6 M A 0.25 Weight approx. 0.15 g Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Semiconductor Group M B GPS05560 0.25 9 Dimensions in mm 1998-11-01