5-V Low-Drop Voltage Regulator TLE 4260 Features • • • • • • • • • • • Low-drop voltage Very low quiescent current Low starting current consumption Integrated temperature protection Protection against reverse polarity Input voltage up to 42 V Overvoltage protection up to 65 V (≤ 400 ms) Short-circuit proof Suited for automotive electronics Wide temperature range EMC proofed (100 V/m) Type Ordering Code Package ▼ TLE 4260 Q67000-A8187 P-TO220-5-1 ▼ TLE 4260 S Q67000-A9044 P-TO220-5-2 P-TO220-5-1 P-TO220-5-2 ▼ Please also refer to the new pin compatible device TLE 4270 Functional Description TLE 4260; S is a 5-V low-drop fixed-voltage regulator in a P-TO220-5-H/S package. The maximum input voltage is 42 V (65 V/≤ 400 ms). The device can produce an output current of more than 500 mA. It is shortcircuit-proof and incorporates temperature protection that disables the circuit at unpermissibly high temperatures. Due to the wide temperature range of – 40 to 150 °C, the TLE 4260; S is also suitable for use in automotive applications. The IC regulates an input voltage VI in the range 6 < VI < 35 V to VQnominal = 5.0 V. A reset signal is generated for an output voltage of VQ < 4.75 V. The reset delay can be set externally with a capacitor. If the output current is reduced below 10 mA, the regulator switches internally to standby and the reset generator is turned off. The standby current drops to max. 700 µA. Semiconductor Group 1 1998-11-01 TLE 4260 Pin Configuration (top view) TLE 4260 1 2 3 TLE 4260 S 4 5 GND VΙ VQ QVRES DRES AEP00577 Pin Definitions and Functions (TLE 4260 and TLE 4260 S) Pin No. Symbol Function 1 VI Input; block directly to ground at the IC by a 470-nF capacitor 2 QVRES Reset output; open collector output controlled by the reset delay 3 GND Ground 4 DRES Reset delay; wired to ground with a capacitor 5 VQ 5-V output voltage; block to ground with a 22-µF capacitor Semiconductor Group 2 1998-11-01 TLE 4260 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the output voltage goes below 96% of its typical value, an external capacitor is discharged on pin 4 by the reset generator. If the voltage on the capacitor reaches the lower threshold VST, a reset signal is issued on pin 2 and not cancelled again until the upper threshold VDT is exceeded. For an output current of less than IQN Off = 10 mA the standby changeover turns off the reset generator. The latter is turned on again when the output current increases, the output voltage drops below 4.2 V or the delay capacitor is discharged by external measures. The IC also incorporates a number of internal circuits for protection against: • • • • Overload Overvoltage Overtemperature Reverse polarity Overvoltage Monitoring Input Saturation Control and Protection Circuit Temperature Sensor 1 7 Control Amplifier Adjustment BANDGAP Reference Output Buffer + - STANDBY Changeover RESET Generator 4 RESET Delay 2 RESET 3 GND AEB00578 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4260 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. VI VI II – 42 42 V – – 65 V t ≤ 400 ms – 1.6 A – VR IR – 0.3 42 V – – – – internally limited IGND – 0.5 – A – VD ID – 0.3 42 V – – – – internally limited Differential voltage VI – VQ – 5.25 VI V – Current IQ – 1.4 A – Tj Tstg – 32 °C – – 50 150 °C – Input (Pin 1) Input voltage Input current Reset Output (Pin 2) Voltage Current Ground (Pin 3) Current Reset Delay (Pin 4) Voltage Current Output (Pin 5) Temperature Junction temperature Storage temperature Semiconductor Group 4 1998-11-01 TLE 4260 Operating Range Parameter Input voltage Junction temperature Symbol Limit Values Unit Remarks min. max. VI Tj – 32 V 1) – 40 165 °C – Rthja Rthjc – 65 K/W – – 3 K/W – Thermal Resistances Junction ambient Junction case 1) See diagram “Output Current versus Input Voltage” Semiconductor Group 5 1998-11-01 TLE 4260 Characteristics VI = 13.5 V; Tj = 25 °C; (unless otherwise specified) Parameter Symbol Limit Values min. typ. max. 5.25 Unit Test Condition Normal Operation V 25 mA ≤ IQ ≤ 500 mA 6 V ≤ VI ≤ 28 V – 40 °C ≤ Tj ≤ 125 °C 1000 – mA – 8.5 10 mA1) Iq – 50 65 mA1) Iq – – 80 mA1) VDR VDR Drop voltage ∆VQ Load regulation Supply-voltage regulation ∆VQ – 0.35 0.5 V – 0.2 0.3 V – 15 35 mV – 15 50 mV Supply-voltage regulation ∆VQ – 5 25 mV Ripple rejection SVR – 54 – dB VI =17 V to 28 V; VQ = 0 V 6 V ≤ VI ≤ 28 V IQ = 150 mA 6 V ≤ VI ≤ 28 V IQ = 500 mA VI ≤ 6 V IQ = 500 mA VI = 4.5 V; IQ = 0.5 A VI = 4.5 V; IQ = 0.15 A 25 mA ≤ IQ ≤ 500 mA VI ≤ 6 V to 28 V; IQ = 100 mA VI ≤ 6 V to 16 V; IQ = 100 mA f = 100 Hz; Vr = 0.5 Vpp Temperature drift of output voltage1) αVQ – 2× 10–4 – 1/°C – Quiscent current; Iq = II – IQ Iq – 500 700 µA 10 V ≤ VI ≤ 16 V; IQ = 0 mA Quiscent current; Iq = II – IQ Iq – 750 850 µA 10 V ≤ VI ≤ 16 V; IQ = 5 mA Output voltage VQ 4.75 5.0 Short -circuit current ISC 500 Current consumption Iq = II – IQ Iq Current consumption Iq = II – IQ Current consumption Iq = II – IQ Drop voltage Standby Operation Semiconductor Group 6 1998-11-01 TLE 4260 Characteristics (cont’d) VI = 13.5 V; Tj = 25 °C; (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. IqSOFF IqNON – 1.0 1.2 mA see test diagram – 1.7 2.2 mA see test diagram IqNOFF IqSON IQNOFF ∆IQ – 1.55 2.00 mA see test diagram – 850 1050 µA see test diagram 7.5 10 12.5 mA see test diagram 2.25 3 4 mA see test diagram VRT 94 96 97 % in % of VQ; IQ > 500 mA;VI = 6 V – 0.25 0.40 V – – 1 µA IR = 3 mA;VI = 4.5 V VR = 5 V 7 10 13 µA – 0.9 1.1 1.3 V – 2.15 2.50 2.75 V – – 25 – ms – 5 – µs CD = 100 nF CD = 100 nF 40 43 45 V IQ < 1 mA – 3.0 – V – – 500 – µA – – 1.5 mA VQ = 0 V; VI = 45 V VQ = 5 V; VI = open Standby Off/Normal On Current consumption Current consumption Normal Off/Standby On Current consumption Current consumption Switching threshold Switching hysteresis Reset Generator Switching threshold VR IR Reverse current ID Charge current VST Switching threshold Delay switching threshold VDT tD Delay time tt Delay time Saturation voltage General Data Turn-Off voltage Turn-Off hysteresis Leakage current Reverse output current 1) VIOFF ∆VI IQS IQR See diagram Semiconductor Group 7 1998-11-01 TLE 4260 1 Input 6V to 40V 5 Output 4 TLE 4260 470 nF 22 µF 100 kΩ 100 nF 2 RESET 3 AES00579 Application Circuit ΙΙ 1000 µF 5 Ι Q / Ι SC / Ι QS 1 Ι QR 22 µF 470 nF TLE 4260-2 1.8 kΩ VQ VΙ +VR 2 VC 4 Ιd 3 Ι GND ΙR VR Cd 100 nF VDr = VΙ +VQ AES01509 V SVR = 20 log R ∆VQ Test Circuit Semiconductor Group 8 1998-11-01 TLE 4260 Time Responce Semiconductor Group 9 1998-11-01 TLE 4260 Time Responce in Standby Condition Semiconductor Group 10 1998-11-01 TLE 4260 Standby/Normal Changeover AED00583 2.5 Ι Output Voltage versus Temperature AED00028 5.20 VQ mA V 5.10 2.0 VΙ = 13.5 V Ι N ON Ι N OFF 1.5 5.00 4.90 Ι S OFF Ι S ON 1.0 4.80 ∆Ι Q 0.5 Ι QN OFF 0 7 8 9 4.70 Ι QN ON 4.60 -40 10 11 12 13 14 mA 16 0 40 80 120 C 160 ΙQ j Drop Voltage versus Output Current Current Consumption versus Output Current AED00584 800 Ι D Dr mV 700 600 60 VΙ = 4.5 V T j = 25 C 500 VΙ = 13.5 V 50 400 40 300 30 200 20 100 10 0 0 100 200 300 400 mA 0 600 0 100 200 300 400 mA 600 ΙQ ΙQ Semiconductor Group AED00585 80 mA 70 11 1998-11-01 TLE 4260 Current Consumption versus Input Voltage AED00590 120 Ι Output Voltage versus Input Voltage AED00591 12 VQ mA 100 V 10 RL = 10 Ω RL = 10 Ω 80 8 60 6 40 4 20 2 0 0 10 20 30 0 40 V 50 VΙ 0 2 4 6 8 V 10 VΙ Output Current versus Input Voltage AED00587 1.2 ΙQ A 1.0 T j = 25 C 0.8 0.6 0.4 0.2 0 0 10 20 30 40 V 50 VΙ Semiconductor Group 12 1998-11-01 TLE 4260 Package Outlines P-TO220-5-1 (Plastic Transistor Single Outline) 10 +0.4 10.2 -0.2 1x45˚ +0.1 1.27 +0.1 2.6 5 15.4 ±0.3 0.4 +0.1 1.7 0.8 +0.1 1) 0.6 M 5x 4.5 ±0.4 8.4 ±0.4 1) 1-0.15 at dam bar (max 1.8 from body) 1) 1-0.15 im Dichtstegbereich (max 1.8 vom Körper) Weigth approx. 2.1 g GPT05107 1 8.6 ±0.3 10.2 ±0.3 8.8 -0.2 19.5 max 16 ±0.4 2.8 3.75 4.6 -0.2 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm Semiconductor Group 13 1998-11-01 TLE 4260 P-TO220-5-1 (Plastic Transistor Single Outline) 10 +0.4 10.2 -0.2 4.6 -0.2 1x45˚ 3.75 +0.1 5 15.4 ±0.3 0.4 +0.1 1.7 0.8 +0.1 1) 0.6 M 2.6 ±0.15 5x 1) 1-0.15 at dam bar (max 1.8 from body) 1) 1-0.15 im Dichtstegbereich (max 1.8 vom Körper) Weigth approx. 2.1 g GPT05256 1 12.9 ±0.2 10.9 ±0.2 8.8 -0.2 2.8 1.27 +0.1 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm Semiconductor Group 14 1998-11-01