RF2103P 2 MEDIUM POWER LINEAR AMPLIFIER Typical Applications • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • Commercial and Consumer Systems 2 POWER AMPLIFIERS • Driver for Higher Power Linear Applications • Base Station Equipment Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors, and it produces an output power level of 750mW (CW). The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is 175mW. The unit has a total gain of 31dB, depending upon the output matching network. 0.156 0.148 Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 0.010 0.004 0.347 0.339 0.050 0.252 0.236 0.059 0.057 8° MAX 0° MIN 0.0500 0.0164 Optimum Technology Matching® Applied Si BJT .018 .014 0.010 0.007 Package Style: SOIC-14 Features • 450MHz to 1000MHz Operation • Up to 750mW CW Output Power 14 RF OUT • 31dB Small Signal Gain GND 2 13 RF OUT • Single 2.7V to 7.5V Supply GND 3 12 GND RF IN 1 PRE AMP FPA • 47% Efficiency • Digitally Controlled Power Down Mode PD 4 BIAS CIRCUITS 11 GND VCC1 5 10 GND VCC2 6 9 RF OUT PRE AMP PWR 7 8 RF OUT Functional Block Diagram Rev B1 010720 Ordering Information RF2103P RF2103P PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-1 RF2103P Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Rating Unit Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR -0.5 to +7.5 -0.5 to +5 350 +12 10:1 VDC V mA dBm Operating Case Temperature Operating Ambient Temperature Storage Temperature -40 to +100 -40 to +85 -40 to +150 °C °C °C Parameter Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =5.8V, VPD =5.0V, ZLOAD =18Ω, PIN =0dBm, Freq=915MHz Overall Frequency Range Maximum Output Power Maximum Output Power Second Harmonic Third Harmonic Output Noise Power Input Impedance 450 to 1000 +28.8 +26.5 -24 -30 <-125 50 Input VSWR MHz dBm dBm dBc dBc dBm/Hz Ω <2:1 Output Impedance 18+j0 Ω 31 +26.5 -40 -45 175 <3.5 47 26 dB dBm dBc dBc mA mA % % Nominal 5.8V Configuration Linear Power Gain Saturated CW Output Power IM3 IM5 Collector Current, ICC VPD Current CW Total Efficiency Two Tone Total Efficiency Condition 24 -25 -30 250 VCC =7.5V VCC =5.8V Without external second harmonic trap With external matching network; see application schematic With external matching network; see application schematic Load Impedance for Optimal Match VCC =5.8V, VPD =4.0V, ZLOAD =18Ω, PIN =0dBm, Freq=830MHz POUT =+18.5dBm/tone POUT =+18.5dBm/tone Total of pins 7 and 8 Into pin 4 POUT =+18.5dBm/tone Power Supply Power Supply Voltage Power Supply Idle Current Total "OFF" Current Drain Turn-on Time 2-2 2.7 to 7.5 45 1 <100 80 10 V mA µA ns VPD <0.1VDC VPD =0 to VPD =+4VDC Rev B1 010720 RF2103P Function RF IN 2 GND 3 4 GND PD 5 VCC1 6 7 VCC2 PREAMP PWR 8 9 10 11 12 13 RF OUT RF OUT GND GND GND RF OUT Rev B1 010720 Description Interface Schematic RF input pin. There is an internal blocking capacitor between this pin and the preamp input, but not between the pin and an internal 2kΩ resistor to ground. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 2. 2 Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at VCC (3V to 6.5V), the device will be in full power mode delivering maximum available gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and VCC. It is not optimized for this function so the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control; however, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than VCC. This pin should also have an external bypassing capacitor. Positive supply for the active bias circuits. This pin can be externally combined with pin 6 (VCC2) and the pair bypassed with a single capacitor, placed as close as possible to the package. Additional bypassing of 1 µF is also recommended, but proximity to the package is not as critical. In most applications, pins 5, 6, and 7 can share a single 1 µF bypass capacitor. Same as pin 5. POWER AMPLIFIERS Pin 1 Positive supply for the pre-amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with bypass capacitor). This inductance can be achieved with a short, thin microstrip line or with a low value chip inductor (approximately 1.8nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor. This inductance forms a matching network with the internal series capacitor between the two amplifier stages, setting the amplifier’s frequency of maximum gain. An additional 1µF bypass capacitor in parallel with the 100pF bypass capacitor is also recommended, but placement of this component is not as critical. In most applications, pins 5, 6, and 7 can share a single 1µF bypass capacitor. Same as pin 14. Same as pin 14. Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 14. 2-3 RF2103P Pin 14 POWER AMPLIFIERS 2 Function RF OUT Description Interface Schematic Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 8, 9, 13 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these four pins. Typically, pins 8 and 9 are connected to a network that provides the DC bias and also creates a second harmonic trap. For 915MHz operation, this harmonic trap network is simply a single 2pF capacitor from both pins to ground. This capacitor series resonates with internal bond wires at two times the operating frequency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier’s maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Shunt protection diodes are included to clip peak voltage excursions above approximately 15V to prevent voltage breakdown in worst case conditions. Application Schematic 6.8 nH 22 Ω RF IN 1 PRE AMP 12 nH VB 1 µF C1 2 13 3 12 4 11 L1 For lower frequency operation: Cut trace on board and insert inductor L3 100 pF VCC For lower frequency operation: Cut trace on board and insert inductor L4 RF OUT 14 FPA 100 pF BIAS CIRCUITS 5 10 6 9 7 8 VCC L2 100 pF .01" x .2" (PCB material: FR-4, Thickness:0.031") FREQUENCY (MHz) L1 (nH) 2-4 C2 L2 (nH) L3 (nH) L4 (nH) C1 (pF) 275 20 15 10 20 20 10 480 915 12 6.8 6.8 3.3 4.7 18 12 4 6.8 2 330 pF C2 (pF) Rev B1 010720 RF2103P Evaluation Board Schematic 915MHz Operation (Download Bill of Materials from www.rfmd.com.) P1-1 C8 1 nF P1-3 2 P1 1 VCC 2 GND 3 VB POWER AMPLIFIERS C6 1 nF 2103400 Rev C SMA J1 50 Ω µ strip L4 6.8 nH R1 22 Ω RF IN L3 12 nH C1 100 pF P1-3 P1-1 P1-1 Rev B1 010720 50 Ω Matching Network 1 C9 100 pF C3 100 pF C10 0.01" x 0.2" 100 pF (PCB mat'l: FR-4, Thickness: 0.031") FPA 14 50 Ω µ strip 2 13 3 12 4 C2 100 pF PRE AMP BIAS CIRCUITS C4 4 pF RF OUT J2 L1 6.8 nH 11 5 10 6 9 7 8 L2 3.3 nH C7 2 pF C5 330 pF P1-1 2-5 RF2103P Evaluation Board Layout 1.4” x 1.4” POWER AMPLIFIERS 2 2-6 Rev B1 010720 RF2103P Gain and Pout vs. Pin Vcc=Vb=3.6 V, 915 MHz Efficiency and Icc vs. Pout Vcc=Vb=3.6 V, 915 MHz 35 75 260 30 Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) 60 210 45 160 30 110 15 60 15 2 10 5 Pout (+25°C) Gain (+25°C) Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) 0 0 -25 -20 -15 -10 -5 0 5 10 0 5 10 Pin (dBm) 15 20 25 30 Pout (dBm) Gain and Pout vs. Pin Vcc=Vb=4.8 V, 915 MHz Efficiency and Icc vs. Pout Vcc=Vb=3.6 V, 915 MHz 75 35 260 30 Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) 60 210 45 160 30 110 15 60 20 15 Icc (mA) Efficiency (%) Gain (dB), Pout (dBm) 25 10 5 Pout (+25°C) Gain (+25°C) Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) 0 0 -25 -20 -15 -10 -5 0 10 0 5 5 10 Pin (dBm) 15 20 25 30 Pout (dBm) Gain and Pout vs. Pin Vcc=6.0 V, Vb=5.0 V, 915 MHz Efficiency and Icc vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz 75 35 260 30 Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) 60 210 45 160 30 110 15 60 20 15 Icc (mA) Efficiency (%) Gain (dB), Pout (dBm) 25 10 5 Pout (+25°C) Gain (+25°C) Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) 0 0 -25 -20 -15 -10 Pin (dBm) Rev B1 010720 -5 0 5 10 0 5 10 15 20 25 30 Pout (dBm) 2-7 POWER AMPLIFIERS 20 Icc (mA) Efficiency (%) Gain (dB), Pout (dBm) 25 RF2103P IM3, IM5, and IM2 vs. Pout Vcc=Vb=3.6 V, 915 MHz Harmonics vs. Pout Vcc=Vb=3.6 V, 915 MHz 0 0 IM3 IM5 2Fo 3Fo 4Fo 5Fo 6Fo 7Fo -10 Harmonic Level (dBc) IM2 -20 -30 -40 -50 -20 -30 -40 -50 -60 -60 -15 -10 -5 0 5 10 15 20 25 5 10 Pout per Tone (dBm) 15 20 25 30 25 30 25 30 Fundamental Pout (dBm) IM3, IM5, and IM2 vs. Pout Vcc=Vb=4.8 V, 915 MHz Harmonics vs. Pout Vcc=Vb=4.8 V, 915 MHz 0 0 IM3 IM5 2Fo 3Fo 4Fo 5Fo 6Fo 7Fo -10 IM2 Harmonic Level (dBc) Intermodulation Products (dBc) -10 -20 -30 -40 -50 -20 -30 -40 -50 -60 -60 -15 -10 -5 0 5 10 15 20 25 5 10 Pout per Tone (dBm) 15 20 Fundamental Pout (dBm) IM3, IM5, and IM2 vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz Harmonics vs. Pout Vcc=6.0 V,Vb=5.0 V, 915 MHz 0 0 IM3 IM5 -10 3Fo 4Fo 5Fo 6Fo 7Fo IM2 -20 -30 -40 -50 -20 -30 -40 -50 -60 -60 -15 -10 -5 0 5 10 Pout per Tone (dBm) 2-8 2Fo -10 Harmonic Level (dBc) Intermodulation Products (dBc) POWER AMPLIFIERS 2 Intermodulation Products (dBc) -10 15 20 25 5 10 15 20 Fundamental Pout (dBm) Rev B1 010720 RF2103P Pout vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz Efficiency vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz 75 30 +25°C 20 +25°C -40°C -40°C 60 +85°C +85°C 2 0 45 POWER AMPLIFIERS Efficiency (%) Pout (dBm) 10 30 -10 15 -20 -30 0 0.0 1.0 2.0 3.0 4.0 0.0 5.0 1.0 2.0 Vb (Volts) 3.0 4.0 5.0 4.0 5.0 4.0 5.0 Vb (Volts) Pout vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz 75 30 +25°C 20 +25°C -40°C -40°C 60 +85°C +85°C Efficiency (%) Pout (dBm) 10 0 45 30 -10 15 -20 -30 0 0.0 1.0 2.0 3.0 4.0 0.0 5.0 1.0 2.0 Vb (Volts) 3.0 Vb (Volts) Pout vs. Vb Vcc=6.0 V, Pin=0 dBm, 915 MHz Efficiency vs. Vb Vcc=6.0 V, Pin=0 dBm, 915 MHz 75 30 +25°C 20 +25°C -40°C -40°C 60 +85°C +85°C Efficiency (%) Pout (dBm) 10 0 45 30 -10 15 -20 -30 0 0.0 1.0 2.0 3.0 Vb (Volts) Rev B1 010720 4.0 5.0 0.0 1.0 2.0 3.0 Vb (Volts) 2-9 RF2103P Psat vs. Vcc Vb=Vcc; Vb≤ ≤ 5.0 V, 915 MHz 30 Two Tone Pout vs. Pin, 915 MHz 35 30 25 Psat (dBm) 15 10 20 15 10 Vcc=Vb=3.6V 5 5 Vcc=Vb=4.8V Vcc=6.0V, Vb=5.0V 0 0 3.0 4.0 5.0 6.0 7.0 -25 8.0 -15 -10 -5 0 Pin, per Tone (dBm) Vb Required to Achieve Specific Pout (Vb<5.0 V, 915 MHz) Two Tone Efficiency and Icc vs. Pout, 915 MHz 5 5 100 260 Eff (Vcc=Vb=3.6V) 27dBm Eff (Vcc=Vb=4.8V) 24dBm 4 Eff (Vcc=6.0V, Vb=5.0V) 80 21dBm 210 Icc (Vcc=Vb=3.6V) Two Tone Efficiency (%) 18dBm 15dBm 3 2 1 0 Icc (Vcc=Vb=4.8V) Icc (Vcc=6.0V, Vb=5.0V) 60 160 40 110 20 60 0 2.0 3.0 4.0 5.0 Vcc (Volts) 2-10 -20 Vcc (Volts) 6.0 7.0 8.0 Two Tone Icc (mA) 2.0 Vb (Volts) POWER AMPLIFIERS 2 Pout, per Tone (dBm) 25 20 10 0 5 10 15 20 25 30 Pout, per Tone (dBm) Rev B1 010720