RF2105L 2 HIGH POWER LINEAR UHF AMPLIFIER Typical Applications • 900 MHz ISM Band Applications • Driver Stage for Higher Power Applications • 400 MHz Industrial Radios • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment POWER AMPLIFIERS 2 Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. It is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. 0.258 0.242 0.075 0.065 0.033 0.017 0.025 1 0.258 0.242 0.150 0.080 0.050 R0.008 0.050 0.080 0.022 0.018 0.208 sq. 0.192 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS Package Style: QLCC-16 Alumina Features VCC2 NC NC RF OUT • Single 2.7V to 6.5V Supply 1 16 15 14 • Up to 1.2W CW Output Power • 33dB Small Signal Gain • 48% Efficiency VCC3 2 13 RF OUT BIAS CIRCUIT VCC1 3 12 GND 6 7 8 9 NC 10 RF OUT NC PD 5 GND 11 RF OUT RF IN GND 4 Functional Block Diagram Rev B3 010720 • Digitally Controlled Power Down Mode • Small Package Outline (0.25" x 0.25") Ordering Information RF2105L RF2105L PCBA High Power Linear UHF Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-19 RF2105L Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Rating Unit Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load -0.5 to +8.5 -0.5 to +6.5 700 +12 20:1 VDC VDC mA dBm Operating Case Temperature Operating Ambient Temperature Storage Temperature -40 to +100 -40 to +85 -40 to +150 °C °C °C Parameter Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition T=25 °C, VCC =5.8V, VPD =5.8V, ZLOAD =9Ω, PIN =0dBm, Freq=840MHz Overall Frequency Range Maximum CW Output Power 430 to 930 +30.8 MHz dBm CW Efficiency at Max Output DC Current at Max Output Small-signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR +29.3 +28.5 +30 +27.8 +27 48 450 33 -23 -36 -35 <2:1 dBm dBm dBm dBm dBm % mA dB dBc dBc dBc 50 Ω Input Impedance VCC =5.8V, VPD =5.8V, ZLOAD =9Ω Note that increasing VCC above 5.8V does not result in higher output power; power may actually decrease. VCC =5.0V, VPD =5.0V, ZLOAD =9Ω VCC =4.4V, VPD =4.4V, ZLOAD =9Ω VCC =5.8V, VPD =5.8V, ZLOAD =12Ω VCC =5.0V, VPD =5.0V, ZLOAD =12Ω VCC =4.4V, VPD =4.4V, ZLOAD =12Ω Without external second harmonic trap With external matching network; see application schematic With external matching network; see application schematic Two-Tone Specification Average Two-Tone Power IM3 IM5 IM7 Two-Tone Current Drain Two-Tone Power-Added Eff. 225 +27.0 -30 -32 -40 260 33 -25 -30 350 dBm dBc dBc dBc mA % PEP-3dB POUT =+24.0dBm/tone POUT =+24.0dBm/tone POUT =+24.0dBm/tone Power Control Power Down “ON” VCC V Voltage supplied to the input Power Down “OFF” 0 V Voltage supplied to the input PD Input Current 3.7 5.0 mA Only in “ON” state VDC µA mA mA mA mA VPD <0.1VDC, VCC =6.5V VPD =4.4VDC, VCC =6.5V VPD =5.0VDC, VCC =6.5V VPD =5.8VDC, VCC =6.5V VPD =6.5VDC, VCC =6.5V Power Supply Power Supply Voltage Total Idle Current Drain 80 2-20 2.7 to 6.5 2 60 80 100 120 10 165 Rev B3 010720 RF2105L Function VCC2 2 VCC3 3 VCC1 4 GND 5 PD 6 RF IN 7 8 9 GND NC NC Rev B3 010720 Description Interface Schematic Positive supply for the second stage (driver) amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with a UHF bypassing capacitor). This inductance can be achieved with a short, thin microstrip line or with a low value chip inductor (~2.7nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor (see the application schematic for 430MHz operation). This inductance forms a matching network with the internal series capacitor between the second and third stages, setting the amplifier’s frequency of maximum gain. An additional 1µF bypass capacitor in parallel with the UHF bypass capacitor is also recommended, but placement of this component is not as critical. In most applications, pins 1, 2, and 3 can share a single 1µF bypass capacitor. Positive supply for the active bias circuits. This pin can be externally combined with pin 3 (VCC1) and the pair bypassed with a single UHF capacitor, placed as close as possible to the package. Additional bypassing of 1µF is also recommended, but proximity to the package is not as critical. In most applications, pins 1, 2, and 3 can share a single 1µF bypass capacitor. Positive supply for the first stage (input) amplifier. This pin can be externally combined with pin 2 (VCC3) and the pair bypassed with a single UHF capacitor, placed as close as possible to the package. Additional bypassing of 1µF is also recommended, but proximity to the package is not as critical. In most applications, pins 1, 2, and 3 can share a single 1µF bypass capacitor. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. In addition, for specified performance, the package’s backside metal should be soldered to ground plane. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at VCC (3V to 6.5V), the device will be in full power mode delivering maximum available gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and VCC. It is not optimized for this function so the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control; however, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than VCC, nor should it ever be higher than 6.5V. This pin should also have an external UHF bypassing capacitor. Amplifier RF input. This is a 50Ω RF input port to the amplifier. It does not contain internal DC-blocking and therefore should be externally DC-blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC-blocking. Same as pin 4. 2 POWER AMPLIFIERS Pin 1 Not internally connected. Not internally connected. 2-21 RF2105L Pin 10 Function RF OUT 11 12 13 14 15 16 Pkg Base RF OUT GND RF OUT RF OUT NC NC GND POWER AMPLIFIERS 2 2-22 Description Interface Schematic Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 10, 11, 13, and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these four pins. Typically, pins 10 and 11 are connected to a network that creates a second harmonic trap. For 830MHz operation, this network is simply a single 2.4pF capacitor from both pins to ground. This capacitor series resonates with internal bond wires at two times the operating frequency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier’s maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC-blocking at the output. An additional network of a bias inductor and parallel resistor provides DC bias and helps to protect the output from high voltage swings due to severe load mismatches. Shunt protection diodes are included to clip peak voltage excursions above ~15V to prevent voltage breakdown in worst case conditions. Same as pin 10. Same as pin 4. Same as pin 10. Same as pin 10. Not internally connected. Not internally connected. This contact is the main ground contact for the entire device. Care should be taken to ensure that this contact is well soldered in order to prevent performance from being degraded from that indicated in the specifications. Rev B3 010720 RF2105L Application Schematic for 430MHz Operation VCC 220 nH 100 pF 10 Ω 180 Ω 15 nH 4.7 nH 2 33 pF POWER AMPLIFIERS 1 µF RF OUT 100 pF 1 2 16 15 13 pF 14 13 BIAS CIRCUIT 3 12 4 1 nF 11 5 10 100 pF PD 10 pF 100 pF 6 7 8 9 Ground Back of Package RF IN 100 pF Application Schematic for 840MHz Operation VCC 47 nH 1 µF 100 pF 180 Ω 0.01" x 0.20" (PCB material: FR-4, Thickness: 0.031") 1.8 nH 6.8 pF RF OUT 100 pF 1 2 16 15 14 4.7 pF 13 BIAS CIRCUIT 3 12 4 11 5 10 100 pF PD 0/5 V DC 2.4 pF 100 pF 6 RF IN 7 8 9 Ground Back of Package 100 pF Rev B3 010720 2-23 RF2105L Application Schematic for 915MHz Operation VCC 47 nH 1 µF 100 pF 180 Ω 0.01" x 0.15" (PCB material: FR-4, Thickness: 0.031") POWER AMPLIFIERS 2 5.6 pF RF OUT 100 pF 1 2 16 15 3.9 pF 14 13 BIAS CIRCUIT 3 12 4 11 5 10 100 pF PD 0/5 VDC 1.8 pF 100 pF 6 7 8 9 RF IN Ground Back of Package 100 pF Evaluation Board Schematic (840MHz) (Download Bill of Materials from www.rfmd.com.) L1 47 nH P1-1 2105400 Rev A C10 1 µF C9 1 nF C8 100 nF C7 330 pF C6 100 pF C11 100 nF R3 180 Ω 0.01"x0.2" PCB mat'l: FR-4, Thickness: 0.031" L2 1.8 nH 1 2 C5 100 pF P1-3 C3 330 pF SMA J1 RF IN 2-24 C4 100 pF 50 Ω µ strip C1 100 pF 16 15 12 4 11 5 10 7 8 9 SMA J2 RF OUT C12 is adjusted for 840 MHz 13 3 6 50 Ω µ strip C12 4.7 pF 14 BIAS CIRCUIT C2 6.8 pF C13 2.4 pF P1-1 C14 100 nF P1-3 P1 1 VCC 2 GND 3 PD Rev B3 010720 RF2105L Evaluation Board Layout Board Size 3.020” x 2.020” Board Thickness 0.031”, Board Material FR-4 POWER AMPLIFIERS 2 Rev B3 010720 2-25 RF2105L POWER AMPLIFIERS 2 2-26 Rev B3 010720