RF2172 2 ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Typical Applications • BluetoothTM PA • 3.6V Spread-Spectrum Cordless Phones • 2.4GHz to 2.5GHz ISM Band Systems • Portable Battery-Powered Equipment • 902MHz to 928MHz ISM Band Systems • Spread-Spectrum Systems 2 0.45 0.28 3.75 The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band. The device is packaged in a compact 4mmx4mm LCC. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100mW transmit power at the antenna port. 3.75 + Si Bi-CMOS ü GaAs MESFET SiGe HBT Si CMOS 1.60 4.00 1.50 SQ 3 INDEX AREA 3.20 0.75 0.65 4.00 1.00 0.90 0.05 0.00 Dimensions in mm. NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured 0.10 mm and 0.25 mm from terminal tip. The terminal #1 identifier and terminal numbering conv 3 shall conform to JESD 95-1 SPP-012. Details of termin identifier are optional, but must be located within the z indicated. The identifier may be either a mold or marke feature. 4 5 Optimum Technology Matching® Applied GaAs HBT 1 12° BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed to RF Micro Devices, Inc. Si BJT 1 0.80 TYP 0.75 0.50 Pins 1 and 9 are fused. Package Warpage: 0.05 max. Package Style: LCC, 16-Pin, 4x4 Features GND GND VCC GND GND • 23.5dBm Typical Output Power 1 16 15 14 13 • 0dB to 28dB Variable Gain • 45% Efficiency at Max Output • On-Board Power Down Mode GND 2 12 RF OUT RF IN 3 11 RF OUT Bias 8 9 GND 7 Functional Block Diagram Rev A9 010823 • 902MHz to 928MHz Operation 10 GND GND 6 VPD GND 5 APC GND 4 • 2.4GHz to 2.5GHz Operation Ordering Information RF2172 ISM Band 3.6V, 250mW Amp with Analog Gain Control RF2172 PCBA-H Fully Assembled Evaluation Board 2.4to2.5GHz RF2172 PCBA-L Fully Assembled Evaluation Board 902to928MHz RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-213 POWER AMPLIFIERS Product Description 2 RF2172 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage (RF off) APC Current (Maximum) Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature Parameter Rating Unit -0.5 to +6.0 +10 -0.5 to +6.0 +10 -40 to +85 -55 to +155 VDC mA VDC dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, V CC =3.6V, V PD =3.6V, VAPC =2.5V Overall Usable Frequency Range Input Impedance Input VSWR Output Load VSWR 500 to 2500 50 1.8:1 MHz Ω Without Input Match 0<VAPC <3.0V <10:1 <6:1 0<VAPC <3.6V Freq=2.4GHz to 2.5GHz, PIN =0dBm 2.45GHz Operation Operating Frequency Maximum Output Power Total Efficiency Reverse Isolation Second Harmonic Third Harmonic All Other Spurious Output Load Impedance Gain Control Voltage High Gain Low Gain 22 2.4 to 2.5 +23.5 45 -25 -45 -40 -50 20-j4.5 0 to VCC 24.5 GHz dBm % dB dBc dBc dBc Present to part +22 -10 V dB dB 902MHz Operation Operating Frequency Maximum Output Power Total Efficiency Reverse Isolation Second Harmonic Third Harmonic All Other Spurious Output Load Impedence Gain Control Voltage Gain Control Slope Gain Condition 902 to 928 +24 58 -35 -40 -40 -50 20-j1.6 0 to VCC 20 0 to 28 MHz dBm % dB dBc dBc dBc Ω V VAPC =3.6V, V CC =3.6V, PIN =0dBm VAPC =0V, V CC =3.6V, PIN =0dBm Freq=902MHz to 928MHz, PIN =-3.0dBm Present to part dB/V dB Power Supply Power Supply Voltage Power Supply Current 3.6 145 Idle Current 35 2.8 4.5 2.25 Power Down Current I(PD) I(PD) 2-214 V mA 10 mA µA mA mA V CC =3.6V, VAPC =3.6V, PIN =-3dBm, V PD =3.6V V PD =3.6V, VAPC =3.6V, RF PIN <-30dBm V CC =3.6V, VAPC =0V, V PD =0V total ICC V CC =3.6V, V PD =3.6V into PD pin V CC =3.0V, V PD =3.0V into PD pin Rev A9 010823 RF2172 Function GND 2 GND 3 RF IN 4 5 6 GND GND VPD 7 APC 8 9 10 11 GND GND GND RF OUT 12 RF OUT 13 14 15 GND GND VCC Description Ground connection. For best performance, keep traces physically short and connect immediately to the ground plane. Ground connection for the driver stage. For best performance, keep traces physically short and connect immediately to the ground plane. RF input. This is a 50Ω input. No external matching is needed. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 1. Interface Schematic See pin 15. 2 POWER AMPLIFIERS Pin 1 See pin 1. Power down pin. When this pin is 0V, the device will be in power down mode, dissipating minimum DC power. This pin also serves as the VCC supply pin for the bias circuitry. VPD should be at the supply voltage when the part is not in power down mode. Analog power control. Output power varies as a function of the voltage on this pin. See graph. This pin must be driven through a series resistor with a voltage between 0V and VCC. Series resistor determines dynamic range of power control. See plot “POUT versus Gain Control versus Gain Control Resistor”. APC Bias Network RF IN 1st Stage See pin 1. See pin 1. See pin 1. RF output. An external matching network is required to provide the opti- See pin 15. mum load impedance at this pin. See pin 15. RF output and power supply for the output stage. Bias voltage for the output stage is provided through this pin. A shunt cap resonating with the bond wire inductance at 2xf0 can also be used at this pin to provide a second harmonic trap. See pin 1. See pin 1. Power supply for driver stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the interstage. Refer to the application schematic for the proper configuration. Note: Position and value of the components are important. VCC Inductor External Cap Pin 15 Bond Wire GND RF OUT RF OUT RF IN 2nd Stage 1st Stage 16 Pkg Base GND GND Rev A9 010823 See pin 1. Ground connection for the output stage. This pad should be connected to the groundplane by vias directly under the device. A short path is required to obtain optimum performance, as well as provide a good thermal path to the PCB for maximum heat dissipation. 2-215 RF2172 Application Schematic - 915MHz VCC 22 nF 3.9 nH POWER AMPLIFIERS 2 1 16 15 14 13 2 12 3 11 4 pF 22 nF VCC 3.9 nH 22 nF RF IN 22 nF RF OUT Bias 4 5 6 2.7 nH 10 7 8 4 pF 9 RAPC 3 kΩ 22 nF 22 nF VPD APC Application Schematic - 2.45GHz VCC 22 nF 10Ω 4 pF 1 16 15 14 13 2 12 3 11 22 nF 1.5 nH 22 nF RF IN 0.5 pF Bias 4 5 5 pF VCC 10Ω 6 7 22 nF RF OUT 1.5 pF 10 8 VCC 9 5 pF 200Ω VAPC 22 nF 2-216 22 nF Rev A9 010823 RF2172 Evaluation Board Schematic - 915MHz (Download Bill of Materials from www.rfmd.com). L1 3.9 nH R1* OPEN P1-3 1 VCC2 P2-1 1 VAPC 2 GND 2 GND 3 VCC3 P2-3 3 VCC1 CON3 1 J1 RF IN 50Ω µstrip C2 22 nF 16 15 14 13 2 12 3 11 Bias 4 5 6 7 10 8 C7 4 pF L3 3.9 nH L2 2.7 nH 2 POWER AMPLIFIERS P1-1 22 nF P2 P1 VCC2 CON3 C8 22 nF VCC3 C6 22 nF 50Ω µstrip J2 RF OUT C5 4 pF 9 R2 3 kΩ VCC1 VAPC C3 22 nF Rev A9 010823 C4 22 nF 2-217 RF2172 Evaluation Board Schematic - 2.45GHz VCC2 P1-1 C11 22 nF POWER AMPLIFIERS 2 R3 10Ω P1-3 J1 RF IN 50Ω µstrip C2 22 nF C1 0.5 pF 16 15 14 12 3 11 Bias 5 C3 5 pF R1 10Ω 6 7 10 8 C6 5 pF VCC2 P2-1 1 VAPC 2 GND 2 GND 3 VCC3 P2-3 3 VCC1 9 CON3 L1 1.5 nH VCC3 C9 22 nF C8 22 nF 50Ω µstrip J2 RF OUT C7 1.5 pF 2172401- R2 200Ω VCC1 VAPC C4 22 nF 2-218 13 2 4 1 CON3 C10 4 pF 1 P2 P1 C5 22 nF Rev A9 010823 RF2172 Evaluation Board Layout - 915MHz Board Size 0.80" x 0.85" Board Thickness 0.031”, Board Material FR-4 POWER AMPLIFIERS 2 Evaluation Board Layout - 2.45GHz Board Size 0.800" x 0.924" Board Thickness 0.031”, Board Material FR-4 Rev A9 010823 2-219 RF2172 POUT versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz 30.0 POUT versus PIN VCC=3.0V, VAPC=3.0V, Freq=915MHz 30.0 Pout -40 Pout -40 Pout 25 25.0 25.0 Pout 25 Pout 85 20.0 15.0 15.0 POUT (dBm) 20.0 10.0 10.0 5.0 5.0 0.0 0.0 -5.0 -5.0 -10.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 -10.0 -25.0 5.0 -20.0 -15.0 PIN (dBm) -5.0 0.0 5.0 0.00 5.00 ICC versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz 0.18 Icc -40 Eff (%) -40 60.0 -10.0 PIN (dBm) Efficiency versus PIN VCC=3.6V, VAPC=3.6V, Freq=915MHz 70.0 Icc 25 0.16 Eff (%) 25 Icc 85 Eff (%) 85 0.14 0.12 40.0 ICC (A) Efficiency (%) 50.0 0.10 30.0 0.08 20.0 0.06 10.0 0.04 0.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.02 -25.00 5.0 -20.00 PIN (dBm) 25.0 -15.00 -10.00 -5.00 PIN (dBm) POUT versus VAPC VCC=3.6V, Freq=915MHz, PIN=-3dBm 30.0 ICC versus VAPC VCC=3.6V, Freq=915MHz, PIN=-3dBm 0.16 Pout -40 0.15 Pout 25 0.14 Icc -40 Icc 25 Icc 85 Pout 85 0.13 20.0 0.12 0.11 ICC (A) 15.0 POUT (dBm) POWER AMPLIFIERS 2 POUT (dBm) Pout 85 10.0 0.10 0.09 0.08 5.0 0.07 0.06 0.0 0.05 0.04 -5.0 0.03 -10.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 VAPC (V) 2-220 2.1 2.4 2.7 3.0 3.3 3.6 0.02 0.00 0.30 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60 VAPC (V) Rev A9 010823 RF2172 IAPC versus VAPC VCC=3.6V, VPD=3.6V, Freq=915MHz 0.6 POUT versus Gain Control versus RAPC VCC=3.6V, PIN=-3dBm, Freq=915MHz 30.0 Rapc (3k) Iapc[mA] -40 0.4 Rapc (3.5k) 25.0 Iapc[mA] 25 Rapc (4k) Iapc[mA] 85 20.0 0.2 2 -0.2 POWER AMPLIFIERS POUT (dBm) IAPC (mA) 15.0 0.0 10.0 5.0 -0.4 0.0 -0.6 -5.0 -0.8 -10.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 0.0 0.3 0.6 0.9 1.2 VAPC (V) 1.8 2.1 2.4 2.7 3.0 3.3 3.6 VAPC (V) POUT versus PIN versus RAPC VCC=3.6V, VAPC=3.6V, Freq=915MHz 30.0 1.5 30.0 POUT versus PIN VCC = VAPC = 3.6V, Freq = 2.45 GHz Pout@-40C Rapc (3k) 25.0 25.0 Rapc (3.5k) Pout@+25C Pout@+85C Rapc (4k) 20.0 POUT (dBm) POUT (dBm) 20.0 15.0 10.0 15.0 10.0 5.0 5.0 0.0 0.0 -5.0 -25.0 -5.0 -20.0 -15.0 -10.0 -5.0 0.0 -10.0 -25.0 5.0 -20.0 -15.0 PIN (dBm) Efficiency versus PIN VCC = VAPC = 3.6 V, Freq = 2.45 GHz 50.0 0.25 Eff@-40C 45.0 40.0 -10.0 -5.0 0.0 5.0 0.00 5.00 PIN (dBm) ICC versus PIN VCC = VAPC = 3.6 V, Freq = 2.45 GHz Icc@-40C Eff@+25C Icc@+25C Eff@+85C 0.20 Icc@+85C 30.0 0.15 ICC (A) Efficiency (%) 35.0 25.0 20.0 0.10 15.0 0.05 10.0 5.0 0.0 -25.0 -20.0 -15.0 -10.0 PIN (dBm) Rev A9 010823 -5.0 0.0 5.0 0.00 -25.00 -20.00 -15.00 -10.00 -5.00 PIN (dBm) 2-221 RF2172 POUT versus VAPC VCC = 3.6 V, Freq = 2.45 GHz, PIN = 0 dBm 25.0 0.18 Icc@-40C Pout@-40C 0.16 Pout@+25C 20.0 0.14 15.0 10.0 POUT (dBm) POUT (dBm) 0.12 5.0 0.10 0.08 0.0 0.06 -5.0 0.04 -10.0 0.02 -15.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.00 0.00 3.6 0.40 0.80 1.20 VAPC(V) 1.60 2.00 2.40 2.80 3.20 3.60 VAPC (V) f0, 2f0 over Frequency VCC =VAPC =3.6 V, PIN = 0 dBm 30.0 25.0 0.0 POUT versus PIN VCC - VAPC = 3.0 V, Freq = 2.45 GHz Pout@-40C 20.0 20.0 -10.0 Pout@+25C Pout@+85C 10.0 15.0 -10.0 -20.0 f0@-40C f0@+25C f0@+85C 2f0@-40C 2f0@+25C 2f0@+85C -30.0 -30.0 POUT (dBm) -20.0 2f0 (dBc) f0 (dBm) 0.0 10.0 5.0 -40.0 0.0 -40.0 -50.0 -5.0 -50.0 -60.0 2400.0 -60.0 2420.0 2440.0 2460.0 2480.0 -10.0 -25.0 2500.0 -20.0 -15.0 Frequency (MHz) 0.16 0.14 -10.0 -5.0 0.0 5.0 0.0 5.0 PIN (dBm) ICC versus PIN VCC = VAPC = 3.0 V, Freq = 2.45 GHz 50.0 Efficiency versus PIN VCC = VAPC = 3.0 V, Freq = 2.45 GHz Eff@-40C Icc@-40C 45.0 Icc@+25C Icc@+85C 40.0 Eff@+25C Eff@+85C 0.12 35.0 Efficiency (%) 0.10 ICC (A) POWER AMPLIFIERS Icc@+25C Icc@+85C Pout@+85C 2 POUT versus VAPC VCC = 3.6 V, Freq = 2.45 GHz, PIN = 0 dBm 0.08 0.06 30.0 25.0 20.0 15.0 0.04 10.0 0.02 0.00 -25.00 5.0 -20.00 -15.00 -10.00 PIN (dBm) 2-222 -5.00 0.00 5.00 0.0 -25.0 -20.0 -15.0 -10.0 -5.0 PIN (dBm) Rev A9 010823 RF2172 POUT versus VAPC VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm 25.0 0.14 Pout@-40C 20.0 ICC versus VAPC VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm Icc@-40C Pout@+25C 0.12 Icc@+25C Icc@+85C Pout@+85C 15.0 2 10.0 5.0 0.08 POWER AMPLIFIERS ICC (A) POUT (dBm) 0.10 0.06 0.0 0.04 -5.0 0.02 -10.0 -15.0 0.0 0.5 30.0 25.0 1.0 1.5 2.0 2.5 0.00 0.00 3.0 1.00 1.50 2.00 2.50 VAPC (V) POUT versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz ICC versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz 0.25 Pout(100) Pout(200) Pout(300) Pout(400) 3.00 Icc(100) Icc(200) Icc(300) 0.20 20.0 15.0 Icc(400) 0.15 ICC (A) POUT (dBm) 0.50 VAPC (V) 10.0 0.10 5.0 0.0 0.05 -5.0 -10.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.00 -25.00 5.0 -20.00 -15.00 PIN (dBm) Efficiency versus PIN over R2 VCC = VAPC = 3.6 V, Freq = 2450 MHz 50.0 0.012 Eff(100) 45.0 Eff(200) 0.010 Eff(300) 40.0 -10.00 -5.00 0.00 5.00 PIN (dBm) Eff(400) IAPC versus VAPC over R2 VCC = 3.6 V, PIN = 0 dBm, Freq = 2450 MHz Iapc(100) Iapc(200) Iapc(300) Iapc(400) 0.008 0.006 30.0 IAPC (A) Efficiency (%) 35.0 25.0 20.0 0.004 0.002 15.0 0.000 10.0 -0.002 5.0 0.0 -25.0 -20.0 -15.0 -10.0 PIN (dBm) Rev A9 010823 -5.0 0.0 5.0 -0.004 0.000 0.400 0.800 1.200 1.600 2.000 2.400 2.800 3.200 3.600 VAPC (V) 2-223 RF2172 POWER AMPLIFIERS 2 2-224 Rev A9 010823