RF2128 2 MEDIUM POWER LINEAR AMPLIFIER Typical Applications • PCS Communication Systems • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • Wireless LANs Product Description .315 .305 ü GaAs MESFET SiGe HBT Si CMOS VCC2 1 GND1 2 U pg r ad ed P Si Bi-CMOS GaAs HBT BIAS CIRCUITS .180 SQ MAX Metal lid and base, gold plated 4°MAX 0°MIN .017 .013 .006 .004 Package Style: SOP-8-C Features • Single 3.0V to 6.5V Supply • 100mW Linear Output Power • 25dB Small Signal Gain • 30% Efficiency • Digitally Controlled Power Down Mode • 1900MHz to 2500MHz Operation 7 RF OUT 6 RF OUT S ee PD 3 8 VCC1 .017 .013 R F2 12 .050 .004 .000 8P 1 Optimum Technology Matching® Applied Si BJT .057 MAX .166 SQ ro du ct The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and POS terminals. The part also will function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1900MHz and 2200MHz, with over 100mW transmitted power, or as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation. RF IN 4 5 GND 2 PACKAGE BASE Ordering Information RF2128 RF2128 PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board GND Functional Block Diagram Rev A3 010112 RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-85 RF2128 Absolute Maximum Ratings Parameter Parameter Rating Unit +7.5 +5.5 125 +12 20:1 -40 to +100 -40 to +85 -40 to +150 VDC V mA dBm °C °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =5V, VPD =5.0V, Freq=2400MHz Two-tone Specification Power Supply 0 U pg r Voltage Current dBm dBc dBc dBc % PEP-3dB POUT =+14dBm for each tone POUT =+14dBm for each tone POUT =+14dBm for each tone V Voltage supplied to the input; device is “on” 1.2 V Voltage supplied to the input; device is “off” 65 V V mA mA µA VCC Power Down “OFF” VPD =0.2V Ω dB +17 -24 -36 -44 36 ad ed Power Down “ON” VCC =5.0V, VPD =5.0V, PIN =-3.0dBm VCC =6.0V, VPD =5.5V, PIN =0dBm Maximum output P Average Two-Tone Power IM3 IM5 IM7 Two-Tone Power-Added Efficiency Power Down Control MHz dBm dBm % dB dBc dBc dB R F2 12 1900 to 2500 >+20 >+23 30 25 -25 -22 15 2:1 50 7 ro du ct Frequency Range Maximum Output Power Maximum Output Power Total CW Efficiency Small-signal Gain Second Harmonic Third Harmonic Isolation Input VSWR Input Impedance Noise Figure 8P Overall Current Condition 5 3.0 to 6.5 50 85 10 Specifications Operating Operating Idle At maximum output power Power Down S ee POWER AMPLIFIERS 2 Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Case Temperature Operating Ambient Temperature Storage Temperature 2-86 Rev A3 010112 RF2128 3 PD 4 RF IN 5 GND2 6 RF OUT 7 8 RF OUT VCC1 Pkg Base GND 2 POWER AMPLIFIERS GND1 Interface Schematic Power supply for the driver stage and interstage matching. External matching on this pin is required to optimize the gain. The matching on this port also greatly affects the input impedance. A decoupling capacitor of 330pF is required, together with a series RC for tuning for maximum gain at the desired frequency. See the application information for details. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typical 1.2V or less at room temperature. When this pin is "high", all circuits are operating normally. A "high" is VCC. If PD is below VCC, output power and performance will be degraded. This could be used to obtain some gain control, but results are not guaranteed. RF Input. This is a 50Ω input, but the actual impedance depends on the matching provided on pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground. Ground connection for the output stage. Keep traces physically short and connect immediately to the ground plane for best performance. RF Output and power supply for the output stage. Bias for the output stage needs to be provided on this pin. This can be done through a quarter-wave microstrip that is RF grounded on the other end. For matching to 50Ω, an external series microstrip line is required. Same as pin 6. 8P 2 Description R F2 12 Function VCC2 Power supply for the bias circuits. An external RF bypass capacitor of 22pF is required. Keep the traces to the capacitor as short as possible, and connect the capacitor immediately to the ground plane. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. ro du ct Pin 1 P Application Schematic 2450MHz ad ed VCC 1 nF 330 pF 22 pF U pg r L= 250 mil, W= 20 mil 1.5 Ω S ee VPD POWER DOWN 2.4 pF 1 2 22 pF 15 pF 7 3 6 4 5 6.2 pF L= 175 mil, W= 10mil L = quarter wave, W= 10mil 8 33 pF RF IN Rev A3 010112 BIAS CIRCUITS RF OUT L = 220 mil, W = 25 mil PCB materials: FR-4 Thickness: 0.031" PACKAGE BASE 2-87 RF2128 Evaluation Board Schematic 2450MHz Operation (Download Bill of Materials from www.rfmd.com.) 2128400 Rev P1 2 P1-1 P1-1 C3 1 nF C4 330 pF C2 2.4 pF L=250 mil, W=20 mil P1-3 BIAS CIRCUITS 1 P1-3 C9 1 nF 7 3 6 5 PACKAGE BASE 50 Ω µ strip GND 3 VPD C5 22 pF L=217 mil, W=26 mil C6 16 pF 50 Ω µ strip RF OUT J2 (PCB mat'l: FR-4, Thickness: 0.031") GND 100 Ω, L=174 mil, C1 W=10 mil 6.2 pF 2 8 2 4 VCC R F2 12 RF IN J1 C8 330 pF 1 8P POWER AMPLIFIERS C7 1 µF S ee U pg r ad ed P ro du ct Evaluation Board Layout 1.547" x 1.068" 2-88 Rev A3 010112