Preliminary RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0210 Power Switching Rev.2.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1827-0210 Rev.2.10 Sep 29, 2009 Page 1 of 6 Symbol VDSS VGSS ID Ratings 30 ±20 45 Unit V V A ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg 180 45 25 62.5 50 2.5 150 –55 to +150 A A A mJ W °C/W °C °C RJK0380DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1827-0210 Rev.2.10 Sep 29, 2009 Page 2 of 6 Min 30 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 — — 1.2 — — — — — — — — — — — — — — — 2.4 3.3 95 3350 730 330 1.6 24 9.2 6.7 14 16 ±0.1 1 2.5 3.2 4.7 — — — — — — — — — — μA mA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 22.5 A, VGS = 10 V Note4 ID = 22.5 A, VGS = 4.5 V Note4 ID = 22.5 A, VDS = 10 V Note4 — — — — 58 11.5 0.39 30 — — — — ns ns V ns VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 45 A VGS = 10 V, ID = 22.5 A, VDD ≅ 10 V, RL = 0.44 Ω, Rg = 4.7 Ω IF = 2 A, VGS = 0 Note4 IF = 45 A, VGS = 0 diF/ dt = 100 A/ μs RJK0380DPA Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 Drain Current 60 40 20 0 50 100 150 Case Temperature 100 1 200 limited by RDS(on) 10 100 Drain to Source Voltage Tc (°C) VDS (V) Typical Transfer Characteristics Typical Output Characteristics 50 4.5 V 10 V Pulse Test 3.0 V ID (A) 40 2.8 V 30 40 VDS = 10 V Pulse Test 30 Drain Current ID (A) 1 ms 10 Tc = 25°C 0.1 1 shot Pulse 0.1 1 50 Drain Current μs s Channel Dissipation Pch (W) 80 2.7 V 20 10 VGS = 2.6 V 20 10 25°C Tc = 75°C –25°C 0 2 4 6 Drain to Source Voltage 8 0 10 150 100 ID = 20 A 50 10 A 5A 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) REJ03G1827-0210 Rev.2.10 Sep 29, 2009 Page 3 of 6 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 2 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 1 100 Pulse Test 30 10 VGS = 4.5 V 3 10 V 1 1 3 10 30 Drain Current 100 ID 300 1000 (A) Preliminary Static Drain to Source on State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 10 10000 Pulse Test 3000 8 6 4 Capacitance C (pF) Static Drain to Source on State Resistance RDS (on) (mΩ) RJK0380DPA ID = 5 A, 10 A, 20 A VGS = 4.5 V 2 0 –25 0 25 50 75 Tc Crss 100 (°C) 30 12 VDS 20 8 10 4 VDD = 25 V 10 V 0 0 20 40 Gate Charge 60 0 100 80 Qg (nc) Repetitive Avalanche Energy EAR (mJ) 100 IAP = 25 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1827-0210 Rev.2.10 Sep 29, 2009 Page 4 of 6 30 Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating 80 20 50 Reverse Drain Current IDR (A) 16 VDD = 25 V 10 V VGS (V) VGS Gate to Source Voltage VDS (V) Drain to Source Voltage 40 10 Reverse Drain Current vs. Source to Drain Voltage 20 ID = 45 A VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 Coss 300 10 0 100 125 150 Case Temperature 1000 30 5 A, 10 A, 20 A 10 V Ciss RJK0380DPA Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C 0.1 0.05 0 0.03 .02 se ul p 1 0.0 hot s 1 0.01 10 μ D= PDM PW T PW T 100 μ 10 m 1m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% 10% VDS = 10 V 90% td(on) REJ03G1827-0210 Rev.2.10 Sep 29, 2009 Page 5 of 6 tr 90% td(off) tf RJK0380DPA Preliminary Package Dimensions JEITA Package Code − RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. RJK0380DPA-00-J53 Quantity 3000 pcs REJ03G1827-0210 Rev.2.10 Sep 29, 2009 Page 6 of 6 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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