〈Transistor〉 ＲＴ１Ｎ１４１Ｘ SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE RT1N141X is a one chip transistor with built-in bias resistor,PNP type is RT1P141X. DRAWING RT1N141U UNIT：mm RT1N141C 1.6 0.4 FEATURE 2.5 0.8 0.4 0.5 1.5 0.5 ② 0.4 0.95 ③ ① 0.95 1.6 1.0 2.9 1.90 ② 0.3 0.5 ① 0.5 ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). ③ APPLICATION B (IN) C (OUT) 0.16 0～0.1 0.8 0～0.1 Equivalent circuit R1 1.1 0.15 0.55 0.7 Inverted circuit,switching circuit,interface circuit, driver circuit. JEITA：－ JEDEC：－ R2 E (GND) JEITA：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector Terminal Connector ①：Base ②：Emitter ③：Collector RT1N141M RT1N141T RT1N141S 2.1 ③ JEITA：－ JEDEC： Terminal Connector ①：Emitter ②：Collector ③：Base ③ ② 0.2 0.45 0.15 ③ 0～0.1 ② 0.7 0.9 0.4 ① ① 0.8 1.2 0.8 0.3 0.65 2.0 1.3 ② 0.45 1.27 1.27 2.5 ① 0.65 1.0 14.0 1.0 0.1 0.2 0.25 0.425 0.4 1.25 3.0 0.425 0.4 4.0 JEITA：SC-70 JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION JEITA：－ JEDEC：－ Terminal Connector ①：Base ②：Emitter ③：Collector 〈Transistor〉 ＲＴ１Ｎ１４１Ｘ SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ Ｉ ＣＭ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature ＰＣ Ｔｊ Ｔｓｔｇ RT1N141T RATING RT1N141M 50 10 50 100 200 RT1N141U 125（※） 125 RT1N141C V V V mA mA 150 +125 -55～+125 UNIT RT1N141S 450 mW +150 -55～+150 ℃ ℃ （※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） ＶＩ（ＯＮ） ＶＩ（ＯＦＦ） Ｒ１ Ｒ２／Ｒ１ ｆＴ C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION MIN 50 I C=100μA，RBE=∞ VCB=50V，I E =0 VCE=5V，I C =10mA I C =10mA，I B =0.5mA VCE=0.2V，I C =5mA VCE=5V，I C =100μA VCE=6V，I E LIMIT TYP MAX 0.1 50 0.8 7.0 0.9 =-10mA 0.1 1.5 1.1 10 1.0 200 0.3 3.0 13 1.1 DC Forward Current Gain - Collector Current 1000 DC Forward Current Gain ｈＦＥ Input On Voltage ＶＩ（ＯＮ） （Ｖ） 10 1 0.1 1 10 Collector Current Ｉ Ｃ （ ｍＡ ） 100 100 10 1 10 Collector Current Ｉ Ｃ （ ｍＡ ） Collector Current - Input Off Voltage Collector Current ＩＣ （ｍ Ａ） 1000 100 10 0.0 0.4 0.8 1.2 1.6 2.0 Input Off Voltage Ｖ Ｉ （ Ｏ Ｆ Ｆ ） （ Ｖ ） ISAHAYA ELECTRONICS CORPORATION V μA － V V V kΩ MHz TYPICAL CHARACTERISTICS Input On Voltage - Collector Current UNIT 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003