ISAHAYA RT1N15BX

〈Transistor〉
RT1N15BX SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE
RT1N15BX is a one chip transistor
with built-in bias resistor,PNP type is RT1P15BX.
DRAWING
RT1N15BU
UNIT:mm
RT1N15BC
1.6
0.4
FEATURE
2.5
0.8
0.4
0.5
1.5
0.5
②
0.4
0.95
③
①
0.95
1.6
1.0
2.9
1.90
②
0.3
0.5
①
0.5
・Built-in bias resistor (R2=100kΩ).
③
APPLICATION
C
(OUT)
0.16
0~0.1
0.8
0~0.1
Equivalent circuit
JEITA:-
JEDEC:-
R2
E
(GND)
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N15BM
RT1N15BS
4.0
2.1
1.25
0.425
③
1.0
0.1
1.0
14.0
②
0.3
0.65
①
0.65
2.0
1.3
3.0
0.425
0.45
0~0.1
0.4
2.5
0.7
0.15
1.27 1.27
0.9
B
(IN)
1.1
0.15
0.55
0.7
Inverted circuit,switching circuit,interface circuit,
driver circuit.
JEITA:SC-70
JEDEC:-
Terminal Connector
①:Base
②:Emitter
③:Collector
ISAHAYA ELECTRONICS CORPORATION
①
②
③
JEITA:-
JEDEC:-
Terminal Connector
①:Emitter
②:Collector
③:Base
〈Transistor〉
RT1N15BX SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
I C
I CM
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N15BU
150
+150
-55~+150
RATING
RT1N15BM
RT1N15BC
50
6
50
100
200
200
+150
-55~+150
RT1N15BS
UNIT
V
V
V
mA
mA
mW
℃
℃
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V(BR)CEO
I CBO
hFE
VCE(sat)
R2
fT
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Emitter-base resistance
Gain band width product
TEST CONDITION
I C=100μA,RBE=∞
VCB=50V,I E =0
VCE=5V,I C =5mA
I C =10mA,I B =0.5mA
VCE=6V,I
E
DC forward current gain hFE
VCE=0.2V
1
0.3
100
200
1000
VCE=5V
100
10
1
0.1
0.1
1
10
100
Collector current IC(mA)
0.1
1
10
Collector current IC(mA)
Collector current -Input off voltage
Collector current IC(mA)
100
VCE=5V
10
1
0.1
0.1
1
Input on voltage VI(OFF)(V)
MAX
82
DC forward current gain-Collector current
10
LIMIT
TYP
0.1
=-10mA
Input on voltage -Collector current
Input on voltage VI(ON)(V)
MIN
50
10
ISAHAYA ELECTRONICS CORPORATION
100
UNIT
V
μA
-
V
kΩ
MHz
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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Jan.2003