〈Transistor〉 RT1N15BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE RT1N15BX is a one chip transistor with built-in bias resistor,PNP type is RT1P15BX. DRAWING RT1N15BU UNIT:mm RT1N15BC 1.6 0.4 FEATURE 2.5 0.8 0.4 0.5 1.5 0.5 ② 0.4 0.95 ③ ① 0.95 1.6 1.0 2.9 1.90 ② 0.3 0.5 ① 0.5 ・Built-in bias resistor (R2=100kΩ). ③ APPLICATION C (OUT) 0.16 0~0.1 0.8 0~0.1 Equivalent circuit JEITA:- JEDEC:- R2 E (GND) JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector Terminal Connector ①:Base ②:Emitter ③:Collector RT1N15BM RT1N15BS 4.0 2.1 1.25 0.425 ③ 1.0 0.1 1.0 14.0 ② 0.3 0.65 ① 0.65 2.0 1.3 3.0 0.425 0.45 0~0.1 0.4 2.5 0.7 0.15 1.27 1.27 0.9 B (IN) 1.1 0.15 0.55 0.7 Inverted circuit,switching circuit,interface circuit, driver circuit. JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector ISAHAYA ELECTRONICS CORPORATION ① ② ③ JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base 〈Transistor〉 RT1N15BX SERIES Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER VCBO VEBO VCEO I C I CM PC Tj Tstg Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N15BU 150 +150 -55~+150 RATING RT1N15BM RT1N15BC 50 6 50 100 200 200 +150 -55~+150 RT1N15BS UNIT V V V mA mA mW ℃ ℃ 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL V(BR)CEO I CBO hFE VCE(sat) R2 fT PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Emitter-base resistance Gain band width product TEST CONDITION I C=100μA,RBE=∞ VCB=50V,I E =0 VCE=5V,I C =5mA I C =10mA,I B =0.5mA VCE=6V,I E DC forward current gain hFE VCE=0.2V 1 0.3 100 200 1000 VCE=5V 100 10 1 0.1 0.1 1 10 100 Collector current IC(mA) 0.1 1 10 Collector current IC(mA) Collector current -Input off voltage Collector current IC(mA) 100 VCE=5V 10 1 0.1 0.1 1 Input on voltage VI(OFF)(V) MAX 82 DC forward current gain-Collector current 10 LIMIT TYP 0.1 =-10mA Input on voltage -Collector current Input on voltage VI(ON)(V) MIN 50 10 ISAHAYA ELECTRONICS CORPORATION 100 UNIT V μA - V kΩ MHz Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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