PRELIMINARY RT3NDDM Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3NDDM is a composite transistor built with two Unit：mm 2.1 RT1N237 chips in SC-88 package. 2.0 Built in bias resistor (R1=2.2kΩ，R2=47kΩ) Each transistor elements are independent. Mini package for easy mounting ① ⑥ 0.65 Silicon NPN epitaxial type ② ⑤ 0.65 FEATURE ③ ④ 0.2 1.25 APPLICATION Inverted circuit, switching circuit, 0.13 0∼0.1 0.65 0.9 interface circuit, driver circuit ⑥ ⑤ R1 ④ R2 RTr1 RTr2 R2 R1 TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 ① ② ③ MAXIMUM RATING (Ta=25 ℃) SYMBOL RATING UNIT VCBO Collector to Base voltage PARAMETER 50 V VEBO Emitter to Base voltage 10 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation（Total, Ta=25℃） 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ MARKING ISAHAYA ELECTRONICS CORPORATION ⑥ ⑤ ④ .N D D ① ② ③ PRELIMINARY RT3NDDM Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25 ℃) Symbol Parameter Limits Test conditions Unit Min Typ Max 50 - - V - - 0.1 μA 80 - - - V(BR)CEO Collector to Emitter break down voltage ICBO Collector cut off current VCB =50V,IE=0 hFE DC forward current gain VCE=5V,IC=10mA VCE(sat) Collector to Emitter saturation voltage IC=10mA,IB=0.5mA - 0.1 0.3 V VI(ON) Input on voltage VCE=0.2V,IC=5mA - 0.7 1.1 V VI(OFF) Input off voltage VCE=5V,IC=100μA 0.5 0.6 - V IC=100μA,RBE=∞ R1 Input resistor - 1.5 2.2 2.9 kΩ R2/R1 Resistor ratio - 17 22 26 - fT Gain band width product VCE=6V,IE=-10mA - 200 - MHZ TYPICAL CHARACTERISTICS ( Tr1，Tr2 ) INPUT ON VOLTAGE VS. COLLECTOR CURRENT 10 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 VCE=5V DC FORWARD CURRENT GAIN INPUT ON VOLTAGE VI(ON)(V) VCE=0.2V 1 0.1 100 10 1 10 100 COLLECTOR CURRENT IC(mA) 1 10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 1000 COLLECTOR CURRENT IC(mA) VCE=5V 100 10 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE VI(OFF)(V) ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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