PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % (λ=200 nm) l Low capacitance l Analytical equipment l Optical measurement equipment ■ General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR ➀/Q ➁/R ➂/Q ➃/R ➄/Q ➅/R ➆/Q ➇/R Package Active area size Effective active area (mm) (mm) (mm2) 2.7 × 15 1.1 × 5.9 5.9 6 × 7.6 2.4 × 2.4 5.7 8.9 × 10.1 5.8 × 5.8 33 15 × 16.5 10 × 10 100 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -20 to +60 -20 to +80 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S p ectral Peak response sensitivity range wavelength λ λp (nm) 190 to 1100 S1337-16BQ 320 to 1100 S1337-16BR 190 to 1100 S1337-33BQ 320 to 1100 S1337-33BR 190 to 1100 S1337-66BQ 320 to 1100 S1337-66BR S1337-1010BQ 190 to 1100 S1337-1010BR 320 to 1100 λp 200 nm Min. Typ. (nm) 960 S h ort circuit Te mp. Terminal Dark Rise tim e current Shunt capacitance current coefficient tr resistance Isc of Ct ID NEP VR=0 V Rsh 100 lx V R =10 m V VR=0 V D I V R =10 m V He-Ne GaAs R L = 1 kΩ f=10 k Hz TCID laser LE D Min. Typ. Max. Min. Typ. 633 930 (pF) (GΩ) (GΩ) (W/Hz1/2) nm nm (µA) (µA) (pA) (times/° C) (µs) 0.33 0.5 4.0 5.3 1.0 × 10-14 50 0.2 65 0.2 0.6 0.4 0.6 4.4 6.2 8.4 × 10-15 0.33 0.5 4.0 5.0 8.1 × 10-15 30 0.2 65 0.3 1 0.4 0.6 4.4 6.2 6.5 × 10-15 1.15 0.33 0.5 20 27 1.3 × 10-14 100 1 380 0.1 0.4 0.4 0.6 22 33 1.0 × 10-14 0.33 0.5 65 78 1.8 × 10-14 200 3 1100 0.05 0.2 1.5 × 10-14 0.4 0.6 70 95 Photo sensitivity S (A/W) 0.5 0.62 0.5 0.62 0.5 0.62 0.5 0.62 0.10 0.10 0.10 0.10 - 0.12 0.12 0.12 0.12 - * Window material Q: quartz glass, R: resin coating 1 Si photodiode ■ Spectral response ■ Photo sensitivity temperature characteristic (Typ. Ta =25 ˚C) PHOTO SENSITIVITY (A/W) 0.6 S1337-BR 0.5 0.4 0.3 S1337-BQ S1337-BQ 0.2 0.1 S1337-BR 400 600 800 (Typ. ) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.7 0 190 S1337 series +1.0 +0.5 0 -1.5 190 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KSPDB0102EA ■ Rise time vs. load resistance KSPDB0053EB ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C, VR=0 V) 1 ms (Typ. Ta=25 ˚C) 10 nA S1337-1010BQ/BR S1337-66BQ/BR 1 nA S1337-66BQ/BR DARK CURRENT RISE TIME 100 µs 10 µs 1 µs 100 ns S1337-1010BQ/BR 100 pA S1337-16BQ/BR 10 pA S1337-33BQ/BR 1 pA S1337-16BQ/BR, -33BQ/BR 10 ns 102 103 104 105 LOAD RESISTANCE (Ω) ■ Shunt resistance vs. ambient temperature (Typ. VR=10 mV) S1337-16BQ/BR, -33BQ/BR SHUNT RESISTANCE 100 GΩ 10 GΩ 1 GΩ S1337-66BQ/BR 100 MΩ S1337-1010BQ/BR 10 MΩ 1 MΩ 100 kΩ 10 kΩ −20 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KSPDB0105EA 2 0.1 1 10 REVERSE VOLTAGE (V) KSPDB0103EA 1 TΩ 100 fA 0.01 KSPDB0104EB S1337 series Si photodiode ■ Dimensional outlines (unit: mm) HOLE (2 ×) 0.8 HOLE (2 ×) 0.8 ACTIVE AREA 0.5 LEAD 15 ± 0.15 13.5 ± 0.13 6.2 0.5 LEAD 6.2 0.5 0.95 12.2 1.5 ± 0.1 13.5 ± 0.13 0.45 PHOTOSENSITIVE SURFACE 1.5 ± 0.1 ACTIVE AREA 15 ± 0.15 PHOTOSENSITIVE SURFACE 2.7 ± 0.1 ➁ S1337-16BR 2.7 ± 0.1 ➀ S1337-16BQ ANODE TERMINAL MARK 8.5 ± 0.2 ANODE TERMINAL MARK 8.5 ± 0.2 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0105EA ➂ S1337-33BQ KSPDA0106EA ➃ S1337-33BR 7.6 ± 0.1 7.6 ± 0.1 6.0 ± 0.1 6.6 ± 0.3 4.5 ± 0.2 6.0 ± 0.1 6.6 ± 0.3 5.0 ± 0.3 ANODE TERMINAL MARK 10.5 0.35 0.5 LEAD 4.5 ± 0.2 ANODE TERMINAL MARK 5.0 ± 0.3 0.5 LEAD 2.0 ± 0.1 2.0 ± 0.1 PHOTOSENSITIVE SURFACE 10.5 0.1 0.85 0.35 PHOTOSENSITIVE SURFACE ACTIVE AREA 0.75 ACTIVE AREA Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0107EA KSPDA0108EA 3 Si photodiode ➄ S1337-66BQ S1337 series ➅ S1337-66BR 10.1 ± 0.1 8.9 ± 0.1 10.1 ± 0.1 8.9 ± 0.1 2.0 ± 0.1 10.5 10.5 0.5 LEAD 0.75 PHOTOSENSITIVE SURFACE 0.3 0.1 0.85 0.3 PHOTOSENSITIVE SURFACE ACTIVE AREA 2.0 ± 0.1 ACTIVE AREA 0.5 LEAD 9.2 ± 0.3 9.2 ± 0.3 7.4 ± 0.2 7.4 ± 0.2 ANODE TERMINAL MARK 8.0 ± 0.3 8.0 ± 0.3 ANODE TERMINAL MARK Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0110EA KSPDA0109EA ➆ S1337-1010BQ ➇ S1337-1010BR 16.5 ± 0.2 2.15 ± 0.1 10.5 0.5 LEAD 0.9 0.3 0.1 PHOTOSENSITIVE SURFACE 10.5 1.0 0.3 PHOTOSENSITIVE SURFACE ACTIVE AREA 2.15 ± 0.1 ACTIVE AREA 15.0 ± 0.15 15.0 ± 0.15 16.5 ± 0.2 0.5 LEAD 15.1 ± 0.3 15.1 ± 0.3 12.5 ± 0.2 12.5 ± 0.2 ANODE TERMINAL MARK 13.7 ± 0.3 13.7 ± 0.3 ANODE TERMINAL MARK Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0111EA KSPDA0112EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1032E03 Jul. 2004 DN