SA58637 2 × 2.2 W BTL audio amplifier Rev. 01 — 25 February 2008 Product data sheet 1. General description The SA58637 is a two-channel audio amplifier in an HVQFN20 package. It provides power output of 2.2 W per channel with an 8 Ω load at 9 V supply. The internal circuit is comprised of two Bridge-Tied Load (BTL) amplifiers with a complementary PNP-NPN output stage and standby/mute logic. The SA58637 is housed in a 20-pin HVQFN package, which has an exposed die attach paddle enabling reduced thermal resistance and increased power dissipation. 2. Features n n n n n n n n n Low junction-to-ambient thermal resistance using exposed die attach paddle Gain can be fixed with external resistors from 6 dB to 30 dB Standby mode controlled by CMOS-compatible levels Low standby current < 10 µA No switch-on/switch-off plops High power supply ripple rejection: 50 dB minimum ElectroStatic Discharge (ESD) protection Output short circuit to ground protection Thermal shutdown protection 3. Applications n Professional and amateur mobile radio n Portable consumer products: toys and games n Personal computer remote speakers SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 4. Quick reference data Table 1. Quick reference data VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage operating Iq quiescent current RL = ∞ Ω 2.2 9 18 V - 15 22 mA Istb standby current VMODE = VCC - - 10 µA Po output power THD+N = 10 % 1.2 1.5 - W THD+N = 0.5 % 0.9 1.1 - W THD+N = 10 %; VCC = 9 V; application demo board - 2.2 - W - 0.15 0.3 % [1] THD+N total harmonic distortion-plus-noise Po = 0.5 W PSRR power supply rejection ratio 1 kHz [2] 50 - - dB 100 Hz to 20 kHz [3] 40 - - dB [1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by RL. [2] Power supply rejection ratio is measured at the output with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. [3] Power supply rejection ratio is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. 5. Ordering information Table 2. Ordering information Type number Package SA58637BS Name Description Version HVQFN20 plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 6 × 5 × 0.85 mm SOT910-1 SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 2 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 6. Block diagram VCCL VCCR 17 SA58637 INL− INL+ 10 16 15 14 OUTL− R VCCL R 20 kΩ 1 OUTL+ 20 kΩ STANDBY/MUTE LOGIC INR− INR+ 11 12 13 OUTR− R VCCR R 20 kΩ SVR 6 OUTR+ 3 20 kΩ MODE SELECT 2 4 STANDBY/MUTE LOGIC 5 n.c. 8 9 19 18 20 7 GND GND GND GND LGND RGND 002aad577 Fig 1. Block diagram of SA58637 SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 3 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 7. Pinning information 17 VCCL 18 GND terminal 1 index area 19 GND 20 LGND 7.1 Pinning OUTL+ 1 16 OUTL− MODE 2 15 INL− SVR 3 SELECT 4 13 INR+ n.c. 5 12 INR− OUTR+ 6 11 OUTR− 14 INL+ 8 9 GND GND VCCR 10 7 RGND SA58637BS 002aad578 Transparent top view Fig 2. Pin configuration for HVQFN20 7.2 Pin description Table 3. Symbol Pin description Pin Description OUTL+ 1 positive loudspeaker terminal, left channel MODE 2 operating mode select (standby, mute, operating) SVR 3 half supply voltage, decoupling ripple rejection SELECT 4 BTL loudspeaker channel select (left, right, both channels) n.c. 5 not connected OUTR+ 6 positive loudspeaker terminal, right channel RGND 7 ground, right channel GND 8, 9, 18, 19 ground[1] VCCR 10 supply voltage; right channel OUTR− 11 negative loudspeaker terminal, right channel INR− 12 negative input, right channel INR+ 13 positive input, right channel INL+ 14 positive input, left channel INL− 15 negative input, left channel OUTL− 16 negative output terminal, left channel VCCL 17 supply voltage, left channel LGND 20 ground, left channel [1] Pins 8, 9, 18 and 19 are connected to the lead frame and also to the substrate. They may be kept floating. When connected to the ground plane, the PCB can be used as heatsink. SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 4 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 8. Functional description The SA58637 is a two-channel BTL audio amplifier capable of delivering 2 × 1.5 W output power to an 8 Ω load at THD+N = 10 % using a 6 V power supply. It is also capable of delivering 2 × 2.2 W output power to an 8 Ω load at THD+N = 10 % using a 9 V power supply. Using the MODE pin, the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range of 6 dB to 30 dB by external feedback resistors. 8.1 Power amplifier The power amplifier is a Bridge-Tied Load (BTL) amplifier with a complementary PNP-NPN output stage. The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor and on the negative side the saturation voltage of an NPN power transistor. The total voltage loss is < 1 V. 8.2 Mode select pin (MODE) The device is in Standby mode (with a very low current consumption) if the voltage at the MODE pin is greater than VCC − 0.5 V, or if this pin is floating. At a MODE voltage in the range between 1.5 V and VCC − 1.5 V the amplifier is in a mute condition. The mute condition is useful to suppress plop noise at the output, caused by charging of the input capacitor. The device is in Active mode if the MODE pin is grounded or less than 0.5 V (see Figure 6). 8.3 SELECT output configuration The outputs differentially drives the speakers, so there is no need for coupling capacitors (see Figure 3). If the voltage at the SELECT pin is in the range between 1.5 V and VCC − 1.5 V, or if it is kept floating, then both channels are operational. If the SELECT pin is set to a logic LOW or grounded, then only the right channel is operational and the left channel is in Standby mode. If the SELECT pin is set to logic HIGH or connected to VCC, then only the left channel is operational and right channel is in Standby mode. Setting the SELECT pin to logic LOW or a logic HIGH voltage results in a reduction of quiescent current consumption by a factor of approximately 2. Switching the SELECT pin during operation is not plop-free, because the input capacitor of the channel which is coming out of standby needs to be charged first. For plop-free channel selecting the device has first to be set in mute condition with the MODE pin (between 1.5 V and VCC − 1.5 V). The SELECT pin is then set to the new level and after a delay the MODE pin is set to a LOW level. The delay needed depends on the values of the input capacitors and the feedback resistors. Time needed is approximately 10 × C1 × (R1 + R2), so approximately 0.6 seconds for the values shown in Figure 3. Table 4. Control pins MODE and SELECT versus status of output channels Voltage levels at control pins at VCC = 5 V; for other voltage levels see Figure 6 and Figure 7. Control pin Status of output channel MODE SELECT Left channel Right channel HIGH[1]/n.c.[2] X[3] standby standby 0 HVCC[4] HVCC[4]/n.c.[2] mute mute 15 LOW[5] HVCC[4]/n.c.[2] on on 15 SA58637_1 Product data sheet Typical Iq (mA) © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 5 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier Table 4. Control pins MODE and SELECT versus status of output channels …continued Voltage levels at control pins at VCC = 5 V; for other voltage levels see Figure 6 and Figure 7. Control pin Status of output channel Typical Iq (mA) MODE SELECT Left channel Right channel HVCC[4]/LOW[5] HIGH[1] mute/on standby HVCC[4]/LOW[5] HVCC[4]/n.c.[2] mute/on mute/on 15 HVCC[4]/LOW[5] LOW[5] standby mute/on 8 [1] HIGH = VSELECT > VCC − 0.5 V. [2] n.c. = not connected or floating. [3] X = don’t care. [4] HVCC = 1.5 V < VSELECT < VCC − 1.5 V. [5] LOW = VSELECT < 0.5 V. 8 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage operating −0.3 +18 V VI input voltage −0.3 VCC + 0.3 V IORM repetitive peak output current - 1 A Tstg storage temperature non-operating −55 +150 °C Tamb ambient temperature operating −40 +85 °C VCC(sc) supply voltage (short circuit) - 10 V Ptot total power dissipation - 2.2 W 10. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [1] with heat spreader thermal resistance from junction to solder point Typ Unit 80 K/W 22 K/W 3 K/W Thermal resistance is 22 K/W with DAP soldered to 64.5 mm2 (10 in2), 28.3 g (1 oz) copper heat spreader. 11. Static characteristics Table 7. Static characteristics VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions VCC supply voltage operating Iq quiescent current RL = ∞ Ω Istb standby current VMODE = VCC SA58637_1 Product data sheet [1] Min Typ Max Unit 2.2 9 18 V - 15 22 mA - - 10 µA © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 6 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier Table 7. Static characteristics …continued VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter VO output voltage ∆VO(offset) differential output voltage offset IIB input bias current VMODE voltage on pin MODE Conditions [2] Min Typ Max Unit - 2.2 - V - - 50 mV pins INL+, INR+ - - 500 nA pins INL−, INR− - - 500 nA operating 0 - 0.5 V mute 1.5 - VCC − 1.5 V standby VCC − 0.5 - VCC V IMODE current on pin MODE 0 V < VMODE < VCC - - 20 µA VSELECT voltage on pin SELECT both channels on 1.5 - VCC − 1.5 V left channel on VCC − 0.5 - VCC V II(SELECT) input current on pin SELECT right channel on GND - 0.5 V VSELECT = 0 V - - 100 µA [1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by RL. [2] The DC output voltage with respect to ground is approximately 0.5 × VCC. 12. Dynamic characteristics Table 8. Dynamic characteristics VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Po output power THD+N = 10 % 1.2 1.5 - W THD+N = 0.5 % 0.9 1.1 - W THD+N = 10 %; VCC = 9 V; application demo board - 2.2 - W Po = 0.5 W - 0.15 0.3 % 6 - 30 dB THD+N total harmonic distortion-plus-noise Gv(cl) closed-loop voltage gain ∆Zi differential input impedance Vn(o) PSRR [1] - 100 - kΩ output noise voltage [2] - - 100 µV power supply rejection ratio 1 kHz [3] −50 - - dB 100 Hz to 20 kHz [4] −40 - - dB mute condition [5] - - 200 µV −40 - - dB VO(mute) mute output voltage αcs channel separation [1] Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3. [2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance of RS = 0 Ω at the input. [3] Power supply rejection ratio is measured at the output with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. [4] Power supply rejection ratio is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail. [5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise. SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 7 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 13. Application information 13.1 BTL application Tamb = 25 °C, VCC = 9 V, f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass 22 Hz to 22 kHz. The single-ended input and BTL differential output diagram is shown in Figure 3. 1 µF VCC R2 50 kΩ R1 INL− 15 17 100 nF 10 10 kΩ INL+ VI 16 14 OUTL− C3 47 µF RL 1 1 µF OUTL+ SA58637 R3 INR− 10 kΩ VI 100 µF R4 50 kΩ INR+ SVR MODE SELECT 12 11 13 OUTR− 3 RL 2 4 6 20 OUTR+ 7 GND 001aah746 R2 Gain left = 2 × ------R1 R4 Gain right = 2 × ------R3 Pins 8, 9, 18 and 19 connected to ground. Fig 3. Application diagram of SA58637 single-ended input and BTL differential output configuration SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 8 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 14. Test information 14.1 Static characterization The quiescent current has been measured without any load impedance (Figure 4). Figure 6 shows three areas: operating, mute and standby. It shows that the DC switching levels of the mute and standby respectively depends on the supply voltage level. 002aac081 30 002aac089 10 VO (V) 1 Iq (mA) 10−1 20 10−2 (1) 10−3 10 (2) (3) 10−4 10−5 10−6 10−1 0 0 4 8 12 16 20 VCC (V) 1 102 10 VMODE (V) RL = ∞ Ω Band-pass = 22 Hz to 22 kHz. (1) VCC = 3 V. (2) VCC = 5 V. (3) VCC = 12 V. Fig 4. Quiescent current as a function of supply voltage Fig 5. Output voltage as a function of voltage on pin MODE 002aac090 16 VMODE (V) 12 standby 8 mute 4 operating 0 0 4 8 12 16 VCC (V) Fig 6. Voltage on pin MODE as a function of supply voltage SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 9 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 002aad579 20 VSELECT (V) 16 (4) 12 (5) VCC 8 (3) (1) 4 (2) 0 0 4 8 12 16 20 VCC (V) (1) Left channel on (2) Left channel standby (3) Right channel on (4) Right channel standby (5) Left channel + right channel on Fig 7. Voltage on pin SELECT as a function of supply voltage SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 10 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 14.2 BTL dynamic characterization The total harmonic distortion-plus-noise (THD+N) as a function of frequency (Figure 8) was measured with a low-pass filter of 80 kHz. The value of capacitor C3 influences the behavior of PSRR at low frequencies; increasing the value of C3 increases the performance of PSRR. 002aac083 10 002aac084 −60 αcs (dB) THD+N (%) (1) −70 1 (2) (1) −80 (3) (2) 10−1 −90 10−2 10 102 103 104 −100 105 102 10 103 f (Hz) 104 105 f (Hz) VCC = 6 V; VO = 2 V; RL = 8 Ω. Po = 0.5 W; Gv = 20 dB. (1) VCC = 6 V; RL = 8 Ω. (1) Gv = 30 dB. (2) VCC = 7.5 V; RL = 16 Ω. (2) Gv = 20 dB. (3) Gv = 6 dB. Fig 8. Total harmonic distortion-plus-noise as a function of frequency Fig 9. Channel separation as a function of frequency 002aac085 −20 PSRR (dB) (1) −40 (2) −60 (3) −80 10 102 103 104 105 f (Hz) VCC = 6 V; RS = 0 Ω; Vripple = 100 mV. (1) Gv = 30 dB. (2) Gv = 20 dB. (3) Gv = 6 dB. Fig 10. Power supply rejection ratio as a function of frequency SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 11 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 14.3 Thermal behavior The measured thermal performance of the HVQFN20 package is highly dependent on the configuration and size of the heat spreader on the application demo board. Data may not be comparable between different semiconductor manufacturers because the application demo boards and test methods are not standardized. The thermal performance of a package for a specific application may also differ from those presented here because the configuration of the application boards copper heat spreader may be significantly different. NXP Semiconductors uses FR-4 type application boards with 28.3 g (1 oz) copper traces with solder coating. The demo board (see Figure 16) has a 28.3 g (1 oz) copper heat spreader that runs under the IC and provides a mounting pad to solder to the die attach paddle of the HVQFN20 package. The heat spreader is symmetrical and provides a heat spreader on both top and bottom of the PCB. The heat spreader on top and bottom side of the demo board is connected through 2 mm diameter plated through holes. Directly under the DAP (Die Attach Paddle), the top and bottom side of the PCB are connected by four vias. The total top and bottom heat spreader area is 64.5 mm2 (10 in2). The junction to ambient thermal resistance, Rth(j-a) = 22 K/W for the HVQFN20 package when the exposed die attach paddle is soldered to a 32.3 mm2 (5 in2) area of 28.3 g (1 oz) copper heat spreader on the demo PCB. The maximum sine wave power dissipation for Tamb = 25 °C is: 150 – 25 --------------------- = 5.7 W 22 Thus, for Tamb = 60 °C the maximum total power dissipation is: 150 – 60 --------------------- = 4.1 W 22 The power dissipation as a function of ambient temperature curve (Figure 11) shows the power derating profiles with ambient temperature for three sizes of heat spreaders. For a more modest heat spreader using a 32.3 mm2 (5 in2) area on the top or bottom side of the PCB, the Rth(j-a) is 31 K/W. When the package is not soldered to a heat spreader, the Rth(j-a) increases to 60 K/W. SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 12 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 002aac283 6 (1) P (W) (2) 4 2 (3) 0 0 40 80 120 160 Tamb (°C) (1) 64.5 mm2 (10 in2) heat spreader top and bottom, 28.3 g (1 oz copper). (2) 32.3 mm2 (5 in2) heat spreader top or bottom, 28.3 g (1 oz copper). (3) No heat spreader. Fig 11. Power dissipation as a function of ambient temperature The characteristics curves (Figure 12a and Figure 12b, Figure 13, Figure 14, and Figure 15a and Figure 15b) show the room temperature performance for SA58637 using the demo PCB shown in Figure 16. For example, Figure 12 “Power dissipation as a function of output power” (a and b) show the performance as a function of load resistance and supply voltage. Worst case power dissipation is shown in Figure 13. Figure 15a shows that the part delivers typically 2.8 W per channel for THD+N = 10 % using 8 Ω load at 9 V supply, while Figure 15b shows that the part delivers 3.3 W per channel at 12 V supply and 16 Ω load, THD+N = 10 %. 002aac288 3 002aac289 3 (4) P (W) P (W) (3) 2 2 (2) (3) (2) 1 1 (1) (1) 0 0 0 1 2 3 0 1 2 3 Po (W) 4 Po (W) (1) VCC = 6 V. (1) VCC = 6 V. (2) VCC = 7.5 V. (2) VCC = 7.5 V. (3) VCC = 9 V. (3) VCC = 9 V. (4) VCC = 12 V. a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB Fig 12. Power dissipation as a function of output power SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 13 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 001aah747 4 P (W) 002aac286 4 Po (W) 3 (3) 3 2 (1) (2) (2) 2 (3) 1 1 (1) 0 0 0 4 8 12 0 4 8 VCC (V) 12 VCC (V) (1) RL = 4 Ω. THD+N = 10 %; f = 1 kHz; Gv = 20 dB. (2) RL = 8 Ω. (1) RL = 4 Ω. (3) RL = 16 Ω. (2) RL = 8 Ω. (3) RL = 16 Ω. Fig 13. Worst case power dissipation as a function of supply voltage 002aac284 102 THD+N (%) 10 (1) (2) Fig 14. Output power as a function of supply voltage 1 10−2 10−2 1 (1) (2) (3) (4) 10 (3) 1 10−3 10−2 002aac285 102 THD+N (%) 10 10−3 10−3 10−2 1 10 Po (W) Po (W) (1) VCC = 6 V. (1) VCC = 6 V. (2) VCC = 7.5 V. (2) VCC = 7.5 V. (3) VCC = 9 V. (3) VCC = 9 V. (4) VCC = 12 V. a. RL = 8 Ω; f = 1 kHz; Gv = 20 dB b. RL = 16 Ω; f = 1 kHz; Gv = 20 dB Fig 15. Total harmonic distortion-plus-noise as a function of output power SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 14 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 14.4 General remarks The frequency characteristics can be adapted by connecting a small capacitor across the feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this creates a low-pass filter. 14.5 SA58637BS PCB demo The application demo board may be used for evaluation single-ended input, BTL differential output configuration as shown in the schematic in Figure 3. The demo PCB (Figure 16) is laid out for a 64.5 mm2 (10 in2) heat spreader (total of top and bottom heat spreader area). SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 15 of 22 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors SA58637_1 Product data sheet top layer bottom layer SA58637BS Rev5 Audio Amplifier VCC 100 µF GND OUTL− OUTL+ 10 kΩ 10 kΩ Rev. 01 — 25 February 2008 INL− GND VCC/2 VCC 56 kΩ 1 µF 1 µF 11 kΩ 11 kΩ MODE GND SEL VCC GND 1 µF 47 µF 56 kΩ INR− 1 µF SELECT OUTR+ OUTR− SA58637 16 of 22 © NXP B.V. 2008. All rights reserved. Fig 16. SA58637BS PCB demo 2 × 2.2 W BTL audio amplifier 001aah667 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 15. Package outline HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 6 x 5 x 0.85 mm B D SOT910-1 A terminal 1 index area E A A1 c detail X e1 1/2 e v w b e 7 10 C C A B C M M y1 C y L 6 11 e e2 Eh 1/2 e 1 16 terminal 1 index area 20 17 X Dh 2.5 0 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 b c D Dh E Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.4 0.3 0.2 5.1 4.9 3.15 2.85 6.1 5.9 4.15 3.85 0.8 2.4 4 0.65 0.40 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT910-1 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 05-10-11 Fig 17. Package outline SOT910-1 (HVQFN20) SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 17 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 16. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 16.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 16.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 16.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 18 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 16.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 18) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 9 and 10 Table 9. SnPb eutectic process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 ≥ 350 < 2.5 235 220 ≥ 2.5 220 220 Table 10. Lead-free process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 18. SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 19 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier maximum peak temperature = MSL limit, damage level temperature minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 18. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 17. Abbreviations Table 11. Abbreviations Acronym Description BTL Bridge-Tied Load CMOS Complementary Metal Oxide Semiconductor DAP Die Attach Paddle ESD ElectroStatic Discharge HF High-Frequency NPN Negative-Positive-Negative PCB Printed-Circuit Board PNP Positive-Negative-Positive RMS Root Mean Squared SE Single-Ended THD Total Harmonic Distortion 18. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes SA58637_1 20080225 Product data sheet - - SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 20 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 19. Legal information 19.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 19.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 19.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Suitability for use — NXP Semiconductors products are not 19.4 Trademarks designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 20. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] SA58637_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 February 2008 21 of 22 SA58637 NXP Semiconductors 2 × 2.2 W BTL audio amplifier 21. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 9 10 11 12 13 13.1 14 14.1 14.2 14.3 14.4 14.5 15 16 16.1 16.2 16.3 16.4 17 18 19 19.1 19.2 19.3 19.4 20 21 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Power amplifier . . . . . . . . . . . . . . . . . . . . . . . . . 5 Mode select pin (MODE) . . . . . . . . . . . . . . . . . 5 SELECT output configuration . . . . . . . . . . . . . . 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . . 8 BTL application . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Static characterization . . . . . . . . . . . . . . . . . . . 9 BTL dynamic characterization . . . . . . . . . . . . 11 Thermal behavior . . . . . . . . . . . . . . . . . . . . . . 12 General remarks . . . . . . . . . . . . . . . . . . . . . . . 15 SA58637BS PCB demo . . . . . . . . . . . . . . . . . 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 Soldering of SMD packages . . . . . . . . . . . . . . 18 Introduction to soldering . . . . . . . . . . . . . . . . . 18 Wave and reflow soldering . . . . . . . . . . . . . . . 18 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 18 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 19 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 Legal information. . . . . . . . . . . . . . . . . . . . . . . 21 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information. . . . . . . . . . . . . . . . . . . . . 21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 February 2008 Document identifier: SA58637_1