SD453N/R Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 400/450 A FEATURES • • • • • • • • • • • • • B-8 PRODUCT SUMMARY IF(AV) 400/450 A High power fast recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version case style B-8 Maximum junction temperature 150 °C RoHS complaint Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) SD453N/R S20 S30 400 450 TC 70 630 IF(RMS) IFSM VRRM °C 9300 9600 60 Hz 9730 10 050 1200 to 2500 2.0 trr A V 3.0 25 TJ TJ A 710 50 Hz Range UNITS - 40 to 150 µs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 12 1200 1300 16 1600 1700 20 2000 2100 25 2500 2600 SD453N/R Document Number: 93176 Revision: 08-Apr-08 For technical questions, contact: [email protected] IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 SD453N/R Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 400/450 A FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current at case temperature IF(AV) 180° conduction, half sine wave t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms I2√t for fusing 400 450 No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum No voltage reapplied A °C A °C 55 52 9300 9600 9730 10 050 7820 8070 8190 8450 432 460 395 420 306 326 279 297 t = 0.1 to 10 ms, no voltage reapplied 4320 4600 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.00 0.95 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.09 1.04 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.80 0.60 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.74 0.54 VFM Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 2.20 1.85 Maximum forward voltage drop UNITS 710 100 % VRRM reapplied t = 8.3 ms Maximum S30 70 IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current S20 630 t = 10 ms I2√t SD453N/R TEST CONDITIONS A kA2s kA2√s V mΩ V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) S20 2.0 S30 3.0 TYPICAL VALUES AT TJ = 150 °C TEST CONDITIONS Ipk SQUARE PULSE (A) dI/dt (A/µs) 1000 50 Vr (V) trr AT 25 % IRRM (µs) - 50 Qrr (µC) IFM Irr (A) 3.5 250 120 5.0 380 150 trr t dir dt Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range SYMBOL TEST CONDITIONS TJ, TStg VALUES UNITS - 40 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation 0.1 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Mounting torque ± 10 % K/W Not-lubricated threads Approximate weight Case style www.vishay.com 2 50 Nm 454 See dimensions (link at the end of datasheet) For technical questions, contact: [email protected] g B-8 Document Number: 93176 Revision: 08-Apr-08 SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A Vishay High Power Products ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.010 0.008 120° 0.014 0.014 90° 0.017 0.019 60° 0.025 0.026 30° 0.042 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W 150 SD453N/ R..S20 Series R thJC (DC) = 0.1 K/ W 140 130 120 Conduction Angle 110 100 90 80 70 30° 60° 90° 120° 180° 60 0 50 100 150 200 250 300 350 400 450 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 150 SD453N/ R..S30 Series R thJC (DC) = 0.1 K/ W 140 130 120 Conduction Angle 110 100 90 80 180° 70 30° 130 120 Conduction Period 100 90 80 60 30° 90° 60° 120° 180° DC 50 0 100 200 300 400 500 600 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Document Number: 93176 Revision: 08-Apr-08 700 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) SD453N/ R..S20 Series RthJC (DC) = 0.1 K/ W 70 120° 0 100 200 300 400 500 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics 150 110 90° 60 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 140 60° 150 SD453N/ R..S30 Series R thJC (DC) = 0.1 K/ W 140 130 120 110 Conduc tion Period 100 90 80 30° 70 60° 90° 120° 180° 60 50 DC 40 0 200 400 600 800 Average Forward Current (A) Fig. 4 - Current Ratings Characteristics For technical questions, contact: [email protected] www.vishay.com 3 SD453N/R Series Maximum Average Forward Power Loss (W) 800 700 180° 120° 90° 60° 30° 600 500 RMS Limit 400 300 Conduction Angle 200 SD453N/ R..S20 Series TJ = 150°C 100 0 0 50 100 150 200 250 300 350 400 450 Maximum Average Forward Power Loss (W) Fast Recovery Diodes (Stud Version), 400/450 A Vishay High Power Products 1000 800 700 600 500 RMS Limit 400 Conduction Period 300 200 0 0 700 600 500 RMS Limit 400 Conduction Period 300 200 SD453N/ R..S20 Series TJ = 150°C 100 0 0 100 200 300 400 500 600 Maximum Average Forward Power Loss (W) 800 180° 120° 90° 60° 30° 600 500 RMS Limit 400 300 Conduction Angle 200 SD453N/ R..S30 Series TJ = 150°C 100 0 0 100 200 300 400 500 Average Forward Current (A) Fig. 7 - Forward Power Loss Characteristics www.vishay.com 4 9000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150 °C @60 Hz 0.0083 s @50 Hz 0.0100 s 8000 7000 6000 5000 4000 3000 SD453N/ R..S20 Series 2000 700 Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 700 Peak Half Sine Wave Forward Current (A) 800 100 200 300 400 500 600 700 800 Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics 1 10 100 Number Of Eq ual Amplitud e Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 900 SD453N/ R..S30 Series TJ = 150°C 100 Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics 1000 DC 180° 120° 90° 60° 30° 900 10000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ= 150 °C No Voltage Reapplied 8000 Rated VRRM Reapplied 7000 9000 6000 5000 4000 3000 SD453N/ R..S20 Series 2000 0.01 0.1 1 Pulse Train Duration (s) Fig. 10 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] Document Number: 93176 Revision: 08-Apr-08 SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A 10000 Peak Half Sine Wave Forward Current (A) 9000 Instantaneous Forward Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. 8000 Initial TJ= 150 °C @60 Hz 0.0083 s 7000 @50 Hz 0.0100 s 6000 5000 4000 SD453N/ R..S30 Series 3000 SD453N/ R..S20 Series 1000 TJ= 25°C TJ= 150°C 100 0.5 2000 1 10 100 Number Of Eq ual Amplitud e Half Cycle Current Pulses (N) 8000 7000 6000 5000 4000 3000 SD453N/ R..S30 Series 2000 0.01 0.1 2 2.5 3 3.5 SD453N/ R..S30 Series 1000 TJ= 25°C TJ = 150°C 100 0.5 1 Pulse Train Duration (s) Fig. 12 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) 1.5 10000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 150 °C No Voltage Reapplied Rated VRRM Reapplied Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) 9000 1 Instantaneous Forward Voltage (V) Fig. 13 - Forward Voltage Drop Characteristics Fig. 11 - Maximum Non-Repetitive Surge Current 10000 Vishay High Power Products 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Fig. 14 - Forward Voltage Drop Characteristics 1 0.1 Steady State Value: RthJC = 0.1 K/ W (DC Operation) 0.01 SD453N/ R..S20/ S30 Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 15 - Thermal Impedance ZthJC Characteristic Document Number: 93176 Revision: 08-Apr-08 For technical questions, contact: [email protected] www.vishay.com 5 SD453N/R Series V FP TJ= 150°C I Forward Recovery (V) 80 60 TJ= 25°C 40 20 SD453N/ R..S20 Series 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 16 - Typical Forward Recovery Characteristics 100 V FP TJ = 150°C I Forward Rec overy (V) 80 60 TJ = 25°C 40 20 SD453N/ R..S30 Series 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 17 - Typical Forward Recovery Characteristics Maximum Reverse Rec overy Time - Trr (µs) 6 5.5 SD453N/ R..S20 Series TJ= 150 °C; V r > 100V 5 4.5 I FM = 1000 A Sine Pulse 4 500 A 3.5 150 A 3 2.5 2 10 100 1000 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 18 - Recovery Time Characteristics www.vishay.com 6 800 I FM = 1000 A 700 Sine Pulse 600 500 A 500 400 150 A 300 200 SD453N/ R..S20 Series TJ = 150 °C; V r > 100V 100 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 19 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) 100 Maximum Reverse Rec overy Charge - Qrr (µC) Fast Recovery Diodes (Stud Version), 400/450 A 450 400 I FM = 1000 A Sine Pulse 350 500 A 300 150 A 250 200 150 100 SD453N/ R..S20 Series TJ = 150 °C; V r > 100V 50 0 0 50 100 150 200 250 300 Rate Of Fall Of Forwa rd Current - di/ dt (A/ µs) Fig. 20 - Recovery Current Characteristics Maximum Reverse Recovery Time - Trr (µs) Vishay High Power Products 7 6.5 SD453N/ R..S30 Series TJ = 150 °C, Vr > 100V 6 5.5 5 I FM = 1000 A Sine Pulse 4.5 500 A 4 150 A 3.5 3 2.5 2 10 100 1000 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 21 - Recovery Time Characteristics For technical questions, contact: [email protected] Document Number: 93176 Revision: 08-Apr-08 SD453N/R Series Vishay High Power Products 1E4 1200 I FM = 1000 A 1000 Peak Forward Current (A) Maximum Reverse Rec overy Charge - Qrr (µC) Fast Recovery Diodes (Stud Version), 400/450 A Sine Pulse 800 500 A 600 150 A 400 1500 6000 tp 1E2 1E1 50 100 150 200 250 300 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 25 - Frequency Characteristics 1E4 550 I FM = 1000 A Sine Pulse 500 450 Peak Forward Current (A) Maximum Reverse Recovery Current - Irr (A) SD453N/R..S20 Series Sinusoidal Pulse TC= 70°C, VRRM = 800V dv/ d t = 1000V/ us 4000 Fig. 22 - Recovery Charge Characteristics 500 A 400 150 A 350 300 250 200 150 SD453N/ R..S30 Series TJ = 150 °C; V r > 100V 100 50 1 0.8 1E3 0.6 0.4 SD453N/ R..S20 Series Trapezoidal Pulse TJ = 150°C, VRRM = 800V dv/ dt = 1000V/ µs; d i/ dt = 300A/ µs 1E2 1E1 50 100 150 200 250 300 6 2 tp 0 0 10 joules per pulse 4 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics Rate Of Fa ll Of Forwa rd Current - d i/ dt (A/ µs) Fig. 23 - Recovery Current Characteristics 1E4 1E4 1 2 4 6 10 joules per p ulse Peak Forward Current (A) Peak Forward Current (A) 50 Hz 3000 1E3 Rate Of Fall Of Forward Current - di/ dt (A/ µs) 0.6 0.4 0.2 1E3 0.1 tp 1E2 1E1 100 10000 0 0 200 2000 SD453N/ R..S30 Series TJ = 150 °C; Vr > 100V 200 1000 600 400 1E2 SD453N/ R..S20 Series Sinusoidal Pulse TJ = 150°C, VRRM = 800V dv/ dt = 1000V/ µs 1E3 Pulse Basewidth (µs) Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics Document Number: 93176 Revision: 08-Apr-08 tp 600 1E3 200 100 50 Hz 1500 2000 SD453N/R..S20 Series Tra pezoidal Pulse TC= 70°C, VRRM = 800V d v/ dt = 1000V/us, d i/ dt = 300A/ us 3000 4000 6000 1E4 400 1000 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 27 - Frequency Characteristics For technical questions, contact: [email protected] www.vishay.com 7 SD453N/R Series Vishay High Power Products 1E4 SD453N/ R..S20 Series Trapezoidal Pulse TJ = 150°C, VRRM = 800V dv/ d t = 1000V/ µs di/ dt = 100A/ µs 10 joules per pulse 6 4 2 1 1E3 tp 0.6 0.4 0.2 1E2 1E1 1E2 1E3 Peak Forward Current (A) Peak Forward Current (A) 1E4 Fast Recovery Diodes (Stud Version), 400/450 A 6000 3000 6000 1E2 tp 1000 1E3 600 400 200 1500 100 50 Hz 2000 3000 SD453N/ R..S20 Series Trapezoida l Pulse TC= 70°C, VRRM = 800V dv/ dt = 1000V/ us, di/ dt = 100A/ us 4000 1E2 1E3 Peak Forward Current (A) Peak Forward Current (A) 1E3 1E4 1E4 6000 10 joules per pulse 4 1E3 1 0.8 0.6 SD453N/ R..S30 Series Trapezoidal Pulse TJ = 150°C, VRRM = 800V dv/ dt = 1000V/ µs; di/ dt = 300A/ µs tp 1E2 1E1 1E4 6 2 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics 1E4 1E4 1 2 4 6 10 joules per pulse Peak Forward Current (A) Peak Forward Current (A) tp Pulse Basewidth (µs) Fig. 31 - Frequency Characteristics 1E4 0.8 0.6 0.4 1E3 0.2 0.1 tp 1E2 SD453N/ R...S30 Series Sinusoidal Pulse TJ = 150°C, VRRM = 800V dv/ d t = 1000V/ µs 1E3 Pulse Basewidth (µs) Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 8 SD453N/ R..S30 Series Sinusoida l Pulse TC= 70°C, VRRM = 800V dv/ d t = 1000V/ us 4000 Pulse Basewidth (µs) 1E2 1E1 50 Hz 2000 1E3 Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics 1E2 1E1 200 100 1500 1E2 1E1 1E4 400 1000 tp 400 1E3 100 50 Hz 600 1000 2000 3000 4000 1E4 200 1E2 1E1 1E2 SD453N/ R..S30 Series Trapezoidal Pulse T = 70°C, VRRM = 800V dv/ dt = 1000V/ us, di/ dt = 300A/ us 1E3 1E4 Pulse Basewidth (µs) Fig. 33 - Frequency Characteristics For technical questions, contact: [email protected] Document Number: 93176 Revision: 08-Apr-08 SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A 1E4 10 joules per p ulse Peak Forward Current (A) Peak Forward Current (A) 1E4 Vishay High Power Products 6 4 2 1 0.8 1E3 0.6 0.4 tp 1E2 1E1 SD453N/ R..S30 Series Tra pezoidal Pulse TJ = 150°C, VRRM = 800V tp 1000 1E3 1500 SD453N/ R..S30 Series Trapezoidal Pulse TC= 70°C, V RRM = 800V dv/ dt = 1000V/ us, di/ dt = 100A/ us 3000 4000 1E3 1E2 1E1 1E4 400 200 100 50 Hz 2000 dv/ dt = 1000V/ µs; di/ dt = 100A/ µs 1E2 600 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 35 - Frequency Characteristics Pulse Basewidth (µs) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics ORDERING INFORMATION TABLE Device code SD 45 3 N 25 S30 P S C 1 2 3 4 5 6 7 8 9 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - P = Stud base B-8 3/4" 16UNF-2A M = Stud base B-8 M24 x 1.5 8 -7 S = Isolated lead with silicon sleeve (red = Reverse polarity; blue = Normal polarity) None = Not isolated lead T = Threaded top terminal 3/8" 24UNF-2A 9 - C = Ceramic housing LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93176 Revision: 08-Apr-08 http://www.vishay.com/doc?95303 For technical questions, contact: [email protected] www.vishay.com 9 Outline Dimensions Vishay Semiconductors B-8 DIMENSIONS in millimeters (inches) Ceramic housing 26 (1.023) MAX. 5 (0.20) ± 0.3 (0.01) 10.5 (0.41) DIA. 12 (0.47) MIN. C.S. 70 mm2 245 (9.645) 255 (10.04) 38 (1.5) DIA. MAX. 80 (3.15) MAX. 115 (4.52) MIN. 47 (1.85) MAX. 21 (0.83) MAX. 27.5 (1.08) MAX. SW 45 3/4"-16UNF-2A * *For metric device: M24 x 1.5 - length 21 (0.83) MAX. contact factory Document Number: 95303 Revision: 11-Apr-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000