VISHAY SD803C14S15C

SD803C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 845 A
FEATURES
• High power FAST recovery diode series
• 1.0 to 1.5 µs recovery time
RoHS
COMPLIANT
• High voltage ratings up to 1600 V
• High current capability
• Optimized turn-on and turn-off characteristics
B-43
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC B-43
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
IF(AV)
845 A
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
IF(RMS)
IFSM
I2 t
VRRM
trr
TJ
Document Number: 93180
Revision: 04-Aug-08
TEST CONDITIONS
Ths
Ths
VALUES
UNITS
845
A
55
°C
1326
A
25
°C
50 Hz
11 295
60 Hz
11 830
A
50 Hz
640
60 Hz
583
Range
400 to 1600
V
1.0 to 1.5
µs
TJ
25
- 40 to 125
For technical questions, contact: [email protected]
kA2s
°C
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SD803C..C Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 845 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
SD803C..S10C
SD803C..S15C
IRRM MAXIMUM
AT TJ = 125 °C
mA
45
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
Maximum RMS current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
t = 8.3 ms
IFSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
t = 8.3 ms
I2t
t = 10 ms
I2√t
A
55 (75)
°C
1326
11 830
Sinusoidal half wave,
initial TJ = TJ maximum
9945
640
583
412
t = 0.1 to 10 ms, no voltage reapplied
6400
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
1.02
High level of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
1.32
Low level of forward slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.38
High level of forward slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.28
Ipk = 2655 A, TJ = 25 °C; tp = 10 ms sinusoidal wave
1.89
VFM
kA2s
451
Low level of threshold voltage
Maximum forward voltage drop
A
9500
100 % VRRM
reapplied
t = 8.3 ms
Maximum I2√t for fusing
No voltage
reapplied
UNITS
11 295
No voltage
reapplied
100 % VRRM
reapplied
VALUES
845 (420)
kA2√s
V
mΩ
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
trr AT 25 % IRRM
(µs)
S10
1.0
S15
1.5
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TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
1000
25
IFM
Vr
(V)
- 30
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
2.0
45
34
3.2
87
51
For technical questions, contact: [email protected]
dir
dt
trr
t
Qrr
IRM(REC)
Document Number: 93180
Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 845 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TEST CONDITIONS
VALUES
UNITS
TJ
- 40 to 125
TStg
- 40 to 150
°C
RthJ-hs
DC operation single side cooled
0.076
DC operation double side cooled
0.038
K/W
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
9800 (1000)
N (kg)
83
g
B-43
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.006
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
60°
0.015
0.015
0.016
0.016
30°
0.026
0.026
0.026
0.026
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93180
Revision: 04-Aug-08
For technical questions, contact: [email protected]
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3
SD803C..C Series
SD803C..C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
120
110
100
Conduction Angle
90
30°
80
60°
180°
90°
120°
70
0
50 100 150 200 250 300 350 400 450
Conduction Period
80
30°
60°
70
90°
120°
60
180°
DC
50
0
100
200
300
400
500
600
700
Maximum Average Forward Power Loss (W)
SD803C..C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.076 K/ W
90
90
Conduction Period
80
70
60
90°
50
30°
60°
120°
180°
DC
40
0
200
400
600
800 1000 1200 1400
1600
180°
120°
90°
60°
30°
1400
1200
RMSLimit
1000
800
600
Conduction Angle
400
SD803C..C Series
TJ = 125°C
200
0
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
SD803C..C Series
(Double Side Cooled)
R thJ-hs (DC) = 0.038 K/ W
110
100
Conduc tion Angle
90
30°
60°
90°
120°
180°
60
50
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4
100
Fig. 4 - Current Ratings Characteristics
100
70
110
Fig. 1 - Current Ratings Characteristics
110
80
SD803C..C Series
(Double Side Cooled)
R thJ-hs (DC) = 0.038 K/ W
120
Average Forward Current (A)
120
120
130
Average Forward Current (A)
130
130
Maximum Allowable Heatsink Temperature (°C)
130
Fast Recovery Diodes
(Hockey PUK Version), 845 A
0 100 200 300 400 500 600 700 800 900
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Vishay High Power Products
2200
DC
180°
120°
90°
60°
30°
2000
1800
1600
1400
1200
1000 RMS Limit
800
Conduction Period
600
400
SD803C..C Series
TJ = 125°C
200
0
0
200 400
600
800 1000 1200 1400
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
For technical questions, contact: [email protected]
Document Number: 93180
Revision: 04-Aug-08
SD803C..C Series
10000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
9000
8000
7000
6000
5000
SD803C..C Series
4000
1
10
100
Transient Thermal Impedance Z thJ-hs (K/ W)
Peak Half Sine Wave Forward Current (A)
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 845 A
0.1
SD803C..C Series
0.01
Steady State Value
R thJ-hs = 0.076 K/ W
(Single Side Cooled)
R thJ-hs = 0.038 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
11000
Initial TJ = 125°C
10000
No Voltage Reapplied
Rated VRRMReapplied
9000
8000
7000
6000
5000
4000
SD803C..C Series
3000
0.01
0.1
1
Pulse Train Duration (s)
Instantaneous Forward Current (A)
10000
1000
TJ= 25°C
TJ= 125°C
SD803C..C Series
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
Document Number: 93180
Revision: 04-Aug-08
1
10
100
2.2
2.1
SD803C..S10C Series
TJ= 125 °C; V r = 30V
I FM = 1000 A
Square Pulse
2
1.9
500 A
1.8
1.7
250 A
1.6
10
100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
100
Maximum Reverse Recovery Time - Trr (µs)
12000
0.1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Recovery Time Characteristics
Maximum Reverse Rec overy Charge - Qrr (µC)
Peak Half Sine Wave Forward Current (A)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0.01
Square Wave Pulse Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
130
120
I FM = 1000 A
Square Pulse
110
100
500 A
90
80
250 A
70
60
50
40
30
SD803C..S10C Series
TJ = 125 °C; Vr = 30V
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Charge Characteristics
For technical questions, contact: [email protected]
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SD803C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 845 A
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Current - Irr (A)
Vishay High Power Products
120
I FM = 1000 A
110
Square Pulse
100
500 A
90
80
250 A
70
60
50
40
30
SD803C..S10C Series
TJ = 125 °C; V r = 30V
20
10
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Time - Trr (µs)
SD803C..S15C Series
TJ= 125 °C; V r = 30V
3.5
I FM = 1000 A
Square Pulse
3
500 A
2.5
250 A
100
Rate Of Fall Of Forward Current - di/d t (A/ µs)
140
500 A
120
250 A
100
80
SD803C..S15C Series
TJ= 125 °C; V r = 30V
60
40
10 20 30 40 50 60 70 80 90 100
140
I FM = 1000 A
130
Square Pulse
120
110
100
500 A
90
80
250 A
70
60
50
SD803C..S15C Series
TJ= 125 °C; V r = 30V
40
30
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 14 - Recovery Time Characteristics
10
Sq ua re Pulse
160
Fig. 15 - Recovery Charge Characteristics
4
1E4
I FM = 1000 A
180
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 13 - Recovery Current Characteristics
2
10
200
Fig. 16 - Recovery Current Characteristics
20 joules p er pulse
20 joules per pulse
Peak Forward Current (A)
4
1
2
2
10
1
0.4
0.4
0.2
1E3
4
0.2
0.1
0.1
0.04
0.04
0.02
0.01
1E2
tp
1E1
1E1
SD803C..S10C Series
Sinusoidal Pulse
TJ = 125°C, VRRM = 800V
d v/ d t = 1000V/ µs
1E2
tp
1E3
1E4
1E1
SD803C..S10C Series
Trapezoidal Pulse
TJ= 125°C, VRRM = 800V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
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For technical questions, contact: [email protected]
Document Number: 93180
Revision: 04-Aug-08
SD803C..C Series
Fast Recovery Diodes
Vishay High Power Products
(Hockey PUK Version), 845 A
1E4
10
20 joules per pulse
20 joules p er pulse
10
4
4
Peak Forward Current (A)
2
2
1
1
0.4
0.4
0.2
1E3
0.2
0.1
0.1
0.04
0.02
1E2
0.01
tp
1E1
1E1
SD803C..S15C Series
Sinusoidal Pulse
TJ = 125°C, VRRM = 800V
d v/ d t = 1000V/ µs
1E2
tp
1E3
SD803C..S15C Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 800V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
1E1
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
ORDERING INFORMATION TABLE
Device code
SD
80
3
C
16
S15
C
1
2
3
4
5
6
7
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic PUK
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
trr code (see Recovery Characteristics table)
7
-
C = PUK case B-43
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93180
Revision: 04-Aug-08
http://www.vishay.com/doc?95249
For technical questions, contact: [email protected]
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Outline Dimensions
Vishay Semiconductors
B-43
DIMENSIONS in millimeters (inches)
42 (1.65) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
25.3 (1) DIA. MAX.
2 places
15.4 (0.61)
14.4 (0.57)
0.8 (0.03) MIN.
both ends
40.5 (1.59) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Document Number: 95249
Revision: 26-Nov-07
For technical questions, contact: [email protected]
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000