S SDB1060P PI Schottky Barrier B Rectiffier DUAL CO OMMON CATHODE SCH HOTTKY RECTIF FIER Fe eatures Low L forward d voltage drrop and leakage curren nt Low L power loss and Hiigh efficienccy High H surge capability 1 Dual D common cathode e rectifier 3 Pin 1, 3 : Anode Pin 2 : Cathode 123 Full F lead(Pb b)-free devicce and RoH HS complian nt device 2 TO O-220F-3L Ap pplication ns Power P supp ply - Output rectification n Product Characterist C tics Converter C Free-wheel F ing diode IF(AV) 2 X 5A Reverse R ba attery protecction VRRM R 60V 6 VFM att 125℃ 0.55V IFSM F 120A Power P inverrters De escription n Th he SDB1060 0PI has two o schottky barriers b arra anged in a common c catthode config guration. Ty ypical ap pplications are a in switch hing power supplies, co onverters, free-wheelin f ng diodes, a and reverse e battery pro otection. Orrdering In nformatio on Dev vice Ma arking Code Package e Pack kaging SDB1060PI SDB1060PI TO-220F-3L Tu ube Marking Information n AUK = Manufacture e Logo ∆ = Co ontrol Code of o Manufactu ure YMDD = Date Code Marking -. Y = Year Code -. M = Monthly Co ode -. DD = Daily Code SDB10 060PI = Spec cific Device Code C KSD D-D0O003-001 1 SDB1060PI Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit VRRM VRWM VR 60 V Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage per diode Maximum average forward rectified current 5 IF(AV) total device A 10 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 120 A Storage temperature range Tstg -55℃ to +150℃ ℃ Tj 150 ℃ Symbol Value Unit Maximum operating junction temperature Thermal Characteristics Characteristic Maximum thermal resistance junction to case per diode total device 4.0 Rth(j-c) ℃/W 3.6 Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition Peak forward voltage drop VFM (1) IFM = 5A Reverse leakage current IRM (1) VR = VRRM Junction capacitance Cj Min. Typ. Max. Unit Tj=25℃ - - 0.65 V Tj=125℃ - - 0.55 V Tj=25℃ - - 0.5 mA Tj=125℃ - - 50 mA - 160 - pF VR = 10VDC, f=1MHz Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation: PF = 0.36 IF(AV) + 0.043 IF2(RMS) IFM Forward Voltage : VFM = Vto + rd IFM 2 IF(AV) rd Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS) IF(AV) Vto VFM KSD-D0O003-001 2 SDB1060PI Rating and Characteristic Curves Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode) Fig. 6) Typical Junction Capacitance (Per diode) KSD-D0O003-001 3 SDB1060PI Package Outline Dimension KSD-D0O003-001 4 SDB1060PI The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-D0O003-001 5